文献
J-GLOBAL ID:202002292213786537
整理番号:20A2452281
GaAs(001)上のInAs量子ドットの間欠的成長【JST・京大機械翻訳】
Intermittent growth for InAs quantum dot on GaAs(001)
著者 (7件):
Toujyou Takashi
(National Institute of Technology, Anan College, Tokushima 774-0017, Japan)
,
Toujyou Takashi
(The University of Electro-Communications, Tokyo 182-8585, Japan)
,
Konishi Tomoya
(National Institute of Technology, Anan College, Tokushima 774-0017, Japan)
,
Hirayama Motoi
(National Institute of Technology, Anan College, Tokushima 774-0017, Japan)
,
Yamaguchi Koichi
(The University of Electro-Communications, Tokyo 182-8585, Japan)
,
Tsukamoto Shiro
(National Institute of Technology, Anan College, Tokushima 774-0017, Japan)
,
Tsukamoto Shiro
(The University of Milano-Bicocca, Milano 20125, Italy)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
551
ページ:
Null
発行年:
2020年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)