文献
J-GLOBAL ID:202102250153907312
整理番号:21A0382233
エピタキシャルグラフェン上のGaNのRF-MBE成長と配向制御【JST・京大機械翻訳】
RF-MBE growth and orientation control of GaN on epitaxial graphene
著者 (7件):
Bhuiyan Ashraful G.
(Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan)
,
Bhuiyan Ashraful G.
(Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh)
,
Kamada Yuta
(Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan)
,
Islam Md. Sherajul
(Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh)
,
Syamoto Riku
(Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan)
,
Ishimaru Daiki
(Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan)
,
Hashimoto Akihiro
(Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan)
資料名:
Results in Physics
(Results in Physics)
巻:
20
ページ:
Null
発行年:
2021年
JST資料番号:
W3368A
ISSN:
2211-3797
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)