文献
J-GLOBAL ID:202102264330361203
整理番号:21A0328612
高温ポストアニールによるMgB2薄膜のインフィールド臨界電流密度の増加
Increase in the infield critical current density of MgB2 thin films by high-temperature post-annealing
著者 (7件):
Kambe Hiroto
(Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan)
,
Kawayama Iwao
(Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan)
,
Kitamura Naoya
(Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan)
,
Ichinose Ataru
(Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan)
,
Iwanaka Takumu
(Research & Development Group, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan)
,
Kusunoki Toshiaki
(Research & Development Group, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan)
,
Doi Toshiya
(Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan)
資料名:
Applied Physics Express
(Applied Physics Express)
巻:
14
号:
2
ページ:
025504 (4pp)
発行年:
2021年02月
JST資料番号:
F0599C
ISSN:
1882-0778
CODEN:
APEPC4
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
イギリス (GBR)
言語:
英語 (EN)