文献
J-GLOBAL ID:202102272350255915
整理番号:21A0151749
シリコンオンインシュレータ基板上の単一接合トランジスタ【JST・京大機械翻訳】
Unijunction Transistor on Silicon-On-Insulator Substrate
著者 (8件):
Chen YX.
(State key lab of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China)
,
Liu J.
(State key lab of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China)
,
Xiao K.
(State key lab of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China)
,
Zaslavsky A.
(Brown University,Department of Physics and School of Engineering,Providence,RI,USA,02912)
,
Cristoloveanu S.
(IMEP-LAHC, INP-Grenoble/Minatec, CS 50257,Grenoble,France,38016)
,
Liu FY.
(Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029)
,
Li B.
(Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029)
,
Wan J.
(State key lab of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ICSICT
ページ:
1-3
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)