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J-GLOBAL ID：200901020021581134   Update date: Nov. 27, 2024

Honda Yoshio

ホンダ ヨシオ | Honda Yoshio
Affiliation and department：
Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section

About Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section


Job title： professor
Research field  (1)： Electric/electronic material engineering
Research keywords  (1)： 電子材料
Research theme for competitive and other funds  (22)：
  • 2024 - 2027 真空光トランジスタの創成と超高周波電磁波発生
  • 2023 - 2027 Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials
  • 2023 - 2027 Development of ultra-high resolution neutron imaging by quasi-direct detection using BGaN detector
  • 2019 - 2022 Development of thermal neutron imaging sensor using BGaN semiconductor detector
  • 2019 - 2022 Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples
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Papers (311)：
  • Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, et al. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 2024. 135. 18
  • Shin Ito, Shin ichiro Sato, Michał S. Boćkowski, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Ken ichi Yoshida, Hideaki Minagawa, et al. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2024. 547
  • Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy. Journal of Crystal Growth. 2024. 628. 127529-127529
  • Hirotaka Watanabe, Shugo Nitta, Yuto Ando, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate. Journal of Crystal Growth. 2024. 628. 127552-127552
  • Daisuke Inahara, Shunsuke Matsuda, Wataru Matsumura, Ryo Okuno, Koki Hanasaku, Taketo Kowaki, Minagi Miyamoto, Yongzhao Yao, Yukari Ishikawa, Atsushi Tanaka, et al. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field Effect Transistors. physica status solidi (a). 2023
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MISC (58)：
  • 長澤陽祐, 小島一信, 平野光, 迫秀樹, 橋本愛, 杉江隆一, 一本松正道, 本田善央, 天野浩, 赤崎勇, et al. Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (3). 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 長澤陽祐, 平野光, 一本松正道, 迫秀樹, 橋本愛, 杉江隆一, 本田善央, 天野浩, 赤崎勇, 赤崎勇, et al. Discrete AlN mole fraction observed in AlGaN Layer with Dense Macrosteps (1). 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 長澤陽祐, 平野光, 一本松正道, 迫秀樹, 橋本愛, 杉江隆一, 本田善央, 天野浩, 赤崎勇, 小島一信, et al. Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (2). 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 小島一信, 長澤陽祐, 平野光, 一本松正道, 杉江隆一, 本田善央, 天野浩, 天野浩, 天野浩, 赤崎勇, et al. Characterization of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps. 日本結晶成長学会誌(CD-ROM). 2020. 47. 3
  • Characterization of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps. 2020. 47. 3. 1-8
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Patents (10)：
  • 発光層形成用基材、発光体及び発光物質
  • カーボンドープ半導体膜、半導体素子、及びこれらの製造方法
  • 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材
  • 半導体素子構造、電子エミッタ、及び半導体素子構造の作製方法
  • 半導体発光素子およびその製造方法
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Lectures and oral presentations  (43)：
  • Photocurrent and Photoluminescence measurements for InGaN Based LED
    (LEDIA'17 2017)
  • In-situ monitoring of Laser absorption and scattering method during InGaN growth by MOVPE
    (The 7th International Symposium on Advanced Science and Technology of Silocon Material 2016)
  • In-situ monitoring of InGaN growth by Laser absorption and scattering method
    (SPIE 2016)
  • 世界を照らす青色LED
    (第20回東海地区分析研究会講演会 2015)
  • 発光ダイオード
    (応用物理学会 赤﨑・天野記念LEDスクール 2015)
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Education (1)：
  • - 2003 Nagoya University Graduate School, Division of Engineering Electrical engineering
Professional career (1)：
  • doctor of engineering (Nagoya University)
Work history (9)：
  • 2024/04 - 現在 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Reserch of Future Electronics
  • 2014/12 - 現在 Nagoya University Department of Electrical Engineering and Computer Science
  • 2015/10 - 2024/03 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Associate professor
  • 2016/04 - 2023/03 Aoyama Gakuin University
  • 2013/09/01 - 2017/03/31 Chubu University
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Committee career (22)：
  • 2013/04/01 - 現在 学振162委員会 研究会企画幹事
  • 2016/08/01 - 2019/03/31 IWN2018 庶務委員
  • 2017/04/01 - 2018/12/31 ICMOVPE2018 財務委員
  • 2017/04/01 - 2018/03/31 LEDIA18 プログラム委員
  • 2017/04/01 - 2018/03/31 ISPLASMA2018 プログラム委員
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Awards (1)：
  • 2009/05/16 - 日本結晶成長学会 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞
Association Membership(s) (2)：
日本結晶成長学会ナノ構造・エピタキシャル成長分科会 ,  The Japan Society of Applied Phisics
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