Rchr
J-GLOBAL ID:200901024163919928
Update date: Oct. 31, 2024
Fujisawa Hironori
フジサワ ヒロノリ | Fujisawa Hironori
Affiliation and department:
Job title:
Associate Professor
Homepage URL (1):
https://www.eng.u-hyogo.ac.jp/eecs/eecs7/index.html
Research field (2):
Electronic devices and equipment
, Electric/electronic material engineering
Research keywords (8):
強誘電体メモリ
, 走査型プローブ顕微鏡
, MOCVD法
, 強誘電体薄膜
, ferroelectric random access memories
, scanning probe microscopy
, metalorganic chemical vapor deposition
, ferroelectric thin films
Research theme for competitive and other funds (28):
- 2023 - 2026 低次元物質/強誘電体ヘテロ接合を用いた新メカニズム太陽電池の創出
- 2021 - 2023 pn接合によらない異常光起電力効果に基づく次々世代高効率太陽電池の創製
- 2019 - 2023 「強誘電体分極の巨大近接効果」の現象としての確立
- 2019 - 2022 Investigation and controlling of a quasi-dopant effect at a ferroelectric charged surface and interface
- 2016 - 2019 A breakthrough in ultra-high integration of ferroelectric memories
- 2016 - 2019 Enhancement of an anomalous photovoltaic effect in ferroelectric thin films for an optical actuator application
- 2013 - 2015 Fabrication of Ferroelectric Nanorod Capacitors for Ultrahigh Integrated FeRAMs
- 2012 - 2014 Spontaneous polarization in nanosized ferroelectrics and its size dependence
- 2011 - 2013 Preparation and applications of bismuth-layer-structured ferroelectric nanoplates grown epitaxially on Nb:TiO2 substrates
- 2010 - 2012 FABRICATION OF FERROELCTRIC ONE-DIMENSIONAL NANOSTRUCTURES AND CREATION OF FUNCTIONS
- 2010 - 2011 Preparation of composition-and valence-controlled BiFeO_3 thin films and investigation of leakage mechanism
- 2008 - 2009 Study on fabrication and polarization switching of nanosized ferroelectrics
- 2007 - 2008 Preparation of perovskite bismuth-based compound thin films by hot isostatic pressing
- 2006 - 2008 ナノサイズ強誘電体における分極反転に関する研究
- 2005 - 2006 Study on the Fabrication of Ferroelectric Ultrathin Films and Nanostructures by MOCVD and Their Size Effects
- 2004 - 2006 Investigation of free electron system at ferroelectric domain boundaries coupled with spontaneous polarization
- 2000 - 2003 MOCVD法による高品質強誘電体薄膜の作製と物性評価
- 2001 - 2002 Low-Temperature Growth of Ferroelectric and Electrode Thin Films by MOCVD and Their Application to Three-Dimensional High Density Memories
- 2001 - 2002 MOCVD法による強誘電体ナノ構造の作製とその強誘電性の評価
- 2000 - 2001 Study on the Influence of Grain Boundary of Ferroelectric Thin Films on Elelectrical Properties and Its Application to Memory Devices
- 2000 - 2001 Analysis and Control of Ferroelectric/Semiconductor (Metal) Interface for Their Device-Application
- 1999 - 2000 不純物が強誘電体薄膜に及ぼす影響と高純度強誘電体薄膜の作製およびその評価
- 1997 - 1998 Size Effects of Ferrelectric Thin Films and Influences of the Size on the Thin Film Memory Device Properties
- 1997 - 1998 走査型複合プローブ顕微鏡を用いた強誘電体薄膜のナノレベル評価による劣化現象の解明
- 1996 - 1997 Analysis and Control of Ferroelectric/Semiconductor(Metal)Interface for Their Device-Application
- 1995 - 1996 Investigation and Control of Ferroelectric / Conductor Interface Phenomena and Their Applications to Memory Devices
- MOCVD法による強誘電体薄膜の作製・物性評価及び強誘電体メモリへの応用に関する研究
- Preparation and characterization of ferroelectric thin films by MOCVD and their applications for ferroelectric memories
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Papers (175):
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Seiji Nakashima, Koji Kimura, Naohisa Happo, Artoni Kevin R. Ang, Yuta Yamamoto, Halubai Sekhar, Ai I. Osaka, Koichi Hayashi, Hironori Fujisawa. Intermediate multidomain state in single-crystalline Mn-doped BiFeO3 thin films during ferroelectric polarization switching. Scientific Reports. 2024. 14. 1
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Hideaki Tanimura, Yuma Ueno, Tomoya Mifune, Hironori Fujisawa, Seiji Nakashima, Ai I. Osaka, Shinichi Kato, Takumi Mikawa. Corrigendum: “Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing” [Jpn. J. Appl. Phys. 63 09SP10 (2024)]. Japanese Journal of Applied Physics. 2024
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Hideaki Tanimura, Yuma Ueno, Tomoya Mifune, Hironori Fujisawa, Seiji Nakashima, Ai I. Osaka, Shinichi Kato, Takumi Mikawa. Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing. Japanese Journal of Applied Physics. 2024
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Takeshi Asuka, Junpei Ouchi, Hironori Fujisawa, Seiji Nakashima. Crystallization of (Hf, Zr)O2thin films via non-heating process and their application to ferroelectric-gate thin film transistors. Japanese Journal of Applied Physics. 2023. 62. SM
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Kazuki Arima, Seiji Nakashima, Koji Kimura, Koichi Hayashi, Naohisa Happo, Hironori Fujisawa. Local atomic structure of V-doped BiFeO3thin films measured by X-ray fluorescence holography. Japanese Journal of Applied Physics. 2023. 62. SM
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MISC (16):
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A study on the spontaneous polarization in ferroelectric nanowires and nanoislands. Reports of Toyoda Physical and Chemical Research Institute. 2010. 63. 63. 135-139
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FUJISAWA Hironori, NAKASHIMA Seiji, SHIMIZU Masaru, NIU Hirohiko. Dependence of Electrical Properties of MOCVD-Pb(Zr, Ti)O_3 Thin Films on Grain Size. IEICE technical report. Electron devices. 2009. 98. 591. 13-20
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FUJISAWA Hironori, SHIMIZU Masaru. Preparation of nanosized ferroelectrics by MOCVD and their properties. 2007. 2007. 9. 1-6
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SHIMIZU Masaru, NONOMURA Hajime, FUJISAWA Hironori, NIU Hirohiko, HONDA Koichiro. Fabrication of Ferroelectric Nanostructures by MOCVD and Their Properties. Technical report of IEICE. SDM. 2005. 104. 713. 23-27
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NONOMURA Hajime, FUJISAWA Hironori, SHIMIZU Masaru, NIU Hirohiko, HONODA Koichiro. Structural control of self-assembled PbTiO_3 islands prepared by MOCVD. Technical report of IEICE. SDM. 2004. 103. 729. 31-36
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Books (2):
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Ferroelectric Thin Films (eds. M.Okuyama and Y.Ishibashi)
Springer 2005 ISBN:3540241639
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Nanoscale Phenomena in Ferroelectric Thin Films (ed. S. Hong)
Kluwer Academic Publishers 2003 ISBN:1402076304
Lectures and oral presentations (110):
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Electric-field-induced Structural Changes around Fe and Mn Atoms in Mn-doped BiFeO3 Single Crystal Thin Film Measureed by X-ray Fluorescence Holography
(International Conference on Complex Orders in Condensed Matter 2023 (ICCOCM2023) 2023)
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Dopant-induced Local Atomic Structure Modulation of Transition-metal-doped BiFeO3 Single Crystal Thin Films Measured by X-ray Fluorescence Holography
(International Conference on Complex Orders in Condensed Matter 2023 (ICCOCM2023) (2023/9/24-29, Evian, France) 2023)
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Fabrication of ferroelectric thin film transistors with (Hf,Zr)O<sub>2</sub> films by non-heating process
(応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2023)
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Investigation of graphene/BiFeO<sub>3</sub> heterostructure fabrication process
(応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2023)
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Ferroelectric-gated nanowire transistors with HfO2 thin films
(The 9th Joint Symposium on Advanced Materials and Applications (JSAMA-9) 2023)
more...
Education (2):
- - 1996 Kyoto University
- - 1994 Kyoto University Faculty of Engineering
Professional career (1):
- Doctor of engineering (Kyoto University)
Work history (11):
- 2018 - 現在 University of Hyogo of Engineering, Graduate School
- 2008 - 2018 University of Hyogo of Engineering, Graduate School
- 2006 - 2008 University of Hyogo of Engineering, Graduate School
- 2006 - 2008 Assistant Professor, Graduate School of Engineering, University of Hyogo
- 2008 - - Associate Professor, Graduate School of Engineering, University of Hyogo
- 2004 - 2006 University of Hyogo of Engineering, Graduate School
- 2004 - 2006 Research Associate, Graduate School of Engineering, University of Hyogo
- 2002 - 2004 Himeji Institute of Technology
- 2002 - 2004 Research Associate, Graduate School of Engineering, Himeji Institute of Technology
- 1996 - 2002 Himeji Institute of Technology
- 1996 - 2002 Research Associate, Faculty of Engineering, Himeji Institute of Technology
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Association Membership(s) (8):
日本MRS
, 米国材料学会
, 米国物理学会
, 応用物理学会
, Materials Research Society of Japan
, Materials Research Society
, American Institute of Physics
, The Japan Society of Applied Physics
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