Research field (3):
Basic physical chemistry
, Thin-film surfaces and interfaces
, Electric/electronic material engineering
Research keywords (3):
表面・界面物性
, 光物性
, 光電子分光
Research theme for competitive and other funds (1):
2021 - 2024 多元系エピタキシャル半導体薄膜を用いた多様な欠陥の評価と制御
Papers (36):
Fumio Kawamura, Takehiko Nagai, Hitoshi Tampo. Cu2O single crystal growth using CuCl flux and bandgap evaluation. Materials Letters. 2024. 365
Fumio Kawamura, Yelim Song, Hidenobu Murata, Hitoshi Tampo, Takehiko Nagai, Takashi Koida, Masataka Imura, Naoomi Yamada. Tunability of the bandgap of SnS by variation of the cell volume by alloying with A.E. elements. Scientific Reports. 2022. 12. 1. 7434
Takehiko Nagai, Jiro Nishinaga, Hitoshi Tampo, Shinho Kim, Kazuhiro Hirayama, Tatsuo Matsunobe, Guanzhong Chen, Yuya Ide, Shogo Ishizuka, Hajime Shibata, et al. Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se2 Heterojunctions. ACS Applied Materials & Interfaces. 2022. 14. 14. 16780-16790
Changwook Jeong, Takehiko Nagai, Shogo Ishizuka, Hitoshi Tampo, Shibata Hajime, Shinho Kim, Yangdo Kim. Examination of Suitable Bandgap Grading of Cu(InGa)Se 2 Bottom Absorber Layers for Tandem Cell Application. physica status solidi (a). 2021
Ilyeong Kwon, Takehiko Nagai, Shogo Ishizuka, Hitoshi Tampo, Hajime Shibata, Shinho Kim, Yangdo Kim. Improving the performance of pure sulfide Cu(InGa)S2 solar cells via injection annealing system. Current Applied Physics. 2021. 22. 71-76
Tomita K., Inouye H., Nagai T., Kanemitsu Y. 30aPS-26 Photoluminescence properties and localized excitons of InGaN epitaxial layers. Meeting abstracts of the Physical Society of Japan. 2004. 59. 1. 761-761
Nagai T., Yamamoto A., Inouye H., Kanemitsu Y. 30aPS-55 Ultrafast time-resolved PL spectroscopy of highly photo-excited GaN thin films. Meeting abstracts of the Physical Society of Japan. 2004. 59. 1. 768-768