Rchr
J-GLOBAL ID：200901042811525564
Update date: Nov. 18, 2024
Ichikawa Masakazu
Ichikawa Masakazu | Ichikawa Masakazu
Affiliation and department：
Job title：
Emeritus Professor
Research field (1)：
Thin-film surfaces and interfaces
Research keywords (5)：
ゲルマニウム
, シリコン
, 光物性
, 量子ドット
, 半導体
Research theme for competitive and other funds (4)：
- 2012 - 2015 Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
- 2008 - 2010 Development and Application of a thin film growth method called nano-channel hetero-epitaxy
- 2002 - 2008 超高密度・超微細ナノドット形成とナノ物性評価技術
- 2003 - 2006 Formation and nano-scale characterization of ultrahigh-density nanodot superlattices
Papers (23)：
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Yusuke Ohtsuka, Naoya Kanazawa, Motoaki Hirayama, Akira Matsui, Takuya Nomoto, Ryotaro Arita, Taro Nakajima, Takayasu Hanashima, Victor Ukleev, Hiroyuki Aoki, et al. Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi. Science Advances. 2021. 7. 47
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Yukako Fujishiro, Naoya Kanazawa, Ryosuke Kurihara, Hiroaki Ishizuka, Tomohiro Hori, Fehmi Sami Yasin, Xiuzhen Yu, Atsushi Tsukazaki, Masakazu Ichikawa, Masashi Kawasaki, et al. Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet. Nature Communications. 2021. 12. 1
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Tomoyuki Yokouchi, Naoya Kanazawa, A. Tsukazaki, Yusuke Kozuka, Akiko Kikkawa, Yasujiro Taguchi, Masashi Kawasaki, Masakazu Ichikawa, Fumitaka Kagawa, Yoshinori Tokura. Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect. Journal the Physical Society of Japan. 2015. 84. 104708-1-104708-5
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Yoshiaki Nakamura, Masakazu Ichikawa. Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application. JAPANESE JOURNAL OF APPLIED PHYSICS. 2015. 54. 7
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Yokouchi T., Kanazawa N., Tsukazaki A., Kozuka Y., Kikkawa A., Taguchi Y., Kawasaki M., Ichikawa M., Kagawa F., Tokura Y. 18aCM-6 Planar Hall effect in skyrmion phase of MnSi. Meeting Abstracts of the Physical Society of Japan. 2015. 70. 923-923
ｍore...
MISC (6)：
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Yasuo Nakayama, Iwao Matsuda, Shuji Hasegawa, Masakazu Ichikawa. Growth, quantum confinement and transport mechanisms of Ge nanodot arrays formed on a SiO2 monolayer. e-Journal of Surface Science and Nanotechnology. 2008. 6. 191-201
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Yasuo Nakayama, Shiro Yamazaki, Hiroyuki Okino, Toru Hirahara, Iwao Matsuda, Shuji Hasegawa, Masakazu Ichikawa. Electrical conduction of Ge nanodot arrays formed on an oxidized Si surface. APPLIED PHYSICS LETTERS. 2007. 91. 12. 123104-123104-3
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Alexander Konchenko, Iwao Matsuda, Shuji Hasegawa, Yoshiaki Nakamura, Masakazu Ichikawa. Observation of Quantum Confinement in Ge nanodots on an oxidized Si surface. Physical Review B. 2006. 73. 11. 113311
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Yasuo Nakayama, Iwao Matsuda, Shuji Hasegawa, Masakazu Ichikawa. Quantum regulation of Ge nanodot state by controlling barrier of the interface layer. Applied Physics Letters. 2006. 88. 253102
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中山泰生, 松田巌, 長谷川修司, 市川昌和. 極薄Si酸化物上Geナノドットの界面構造と閉じ込めポテンシャル. 表面科学. 2006. 27. 9. 523-529
ｍore...
Professional career (1)：
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