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J-GLOBAL ID：200901048755877272   Update date: Mar. 25, 2024

Ohmori Kenji

オオモリ ケンジ | Ohmori Kenji
Affiliation and department：
Device Lab Inc.

About Device Lab Inc.


Job title： CEO
Homepage URL  (1)： https://www.devicelab.co.jp
Research field  (2)： Crystal engineering ,  Applied materials
Research keywords  (9)： MOSFET ,  noise ,  1/f noise ,  thermal noise ,  shot noise ,  cryogenic environment ,  半導体プロセス ,  半導体物理 ,  薄膜成長
Research theme for competitive and other funds  (3)：
  • 2008 - 2009 超平滑界面の耐熱性シリサイド薄膜を用いたメタルソース・ドレインMOSFETの研究
  • 2007 - 2008 Nano-scale control of metal/high-k dielectric gate stack structures
  • 2007 - 2007 新材料ゲートスタック構造に向けた超高速一斉デバイス特性評価手法の開発
Papers (82)：
  • Kenji Ohmori, Shuhei Amakawa. Variable-Temperature Broadband Noise Characterization of MOSFETs for Cryogenic Electronics: From Room Temperature down to 3 K. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2023
  • Kenji Ohmori, Shuhei Amakawa. Direct White Noise Characterization of Short-Channel MOSFETs. IEEE Transactions on Electron Devices. 2021. 68. 4. 1478-1482
  • Kenji Ohmori, Shuhei Amakawa. Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier. IEEE Journal of the Electron Devices Society. 2021. 9. 1227-1236
  • K. Ohmori, A. Shinoda, K. Kawai, Z. Wei, T. Mikawa, R. Hasunuma. Reduction of cycle-to-cycle variability in ReRAM by filamentary refresh. 2017 Symposium on VLSI Technology. 2017
  • Wei Feng, Hisashi Shima, Kenji Ohmori, Hiroyuki Akinaga. Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes. Scientific Reports. 2016. 6. 1. 1-8
ｍore...
MISC (3)：
  • K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, et al. Physics of interfaces between gate electrodes and high-k dielectrics. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. 384-387
  • K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, et al. Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. 376-379
  • K. Shiraishi, Y. Akasaka, K. Torii, T. Nakayama, S. Miyazaki, T. Nakaoka, H. Watanabe, K. Ohmori, P. Ahmet, T. Chikyow, et al. New findings in nano-scale interface physics and their relations to nano-CMOS technologies. 2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS. 2006. 180-+
Education (2)：
  • 1995 - 2000 Nagoya University Graduate School of Engineering Department of Crystalline Materials Science
  • 1989 - 1995 Nagoya University School of Engineering Department of Applied Physics
Work history (6)：
  • 2017/04 - 現在 Device Lab Inc. CEO
  • 2010/08 - 2017/03 University of Tsukuba Faculty of Pure and Applied Sciences Associate Professor
  • 2007/04 - 2010/07 Waseda University Institute for Nanoscience and Nanotechnology
  • 2005/04 - 2007/03 National Institute for Materials Science postdoc
  • 2001/06 - 2005/03 University of Illinois at Urbana-Champaign Materials Research Laboratory Postdoc
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Association Membership(s) (2)：
IEEE ,  応用物理学会
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