Rchr
J-GLOBAL ID:200901051268481275   Update date: Aug. 30, 2020

Mori Masayuki

モリ マサユキ | Mori Masayuki
Affiliation and department:
Job title: Associate Professor
Homepage URL  (1): http://www3.u-toyama.ac.jp/nano/
Research field  (4): Electronic devices and equipment ,  Thin-film surfaces and interfaces ,  Crystal engineering ,  Applied materials
Research keywords  (2): 半導体薄膜工学 ,  Semiconductor thin films
Research theme for competitive and other funds  (2):
  • 2007 - 表面再構成制御成長法によるSi上InSb量子井戸作製とその超高速FETへの応用
  • 2007 - Study on the InSb quantum-well on Si and its application for high-speed devices
Papers (66):
Lectures and oral presentations  (82):
  • Surface reconstruction assisted growth of InSb films on V-grooved Si(001) substrate
    (International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN2009) 2009)
  • Au catalyst assisted MBE growth of InSb nanowires on GaAs(001) substrate
    (International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN2009) 2009)
  • RF small signal characterization of active transmission lines loaded by InGaAs/AlAs resonant tunneling diodes
    (International Conference on Solid State Devices and Materials (SSDM2009) 2009)
  • A third harmonic oscillator using coupled RTD pair oscillators
    (Topical Workshop on Heterostructure Microelectronics (TWHM2009) 2009)
  • Heteroepitaxial growth of InSb films on the patterned Si(001) substrate
    (14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14) 2009)
more...
Education (4):
  • - 1998 University of Toyama
  • - 1998 University of Toyama Graduate School, Division of Engineering
  • - 1993 University of Toyama Faculty of Engineering
  • - 1993 University of Toyama Faculty of Engineering
Professional career (1):
  • (BLANK) (University of Toyama)
Awards (1):
  • 1998 - 平成9年度応用物理学会北陸支部発表奨励賞
Association Membership(s) (1):
応用物理学会
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