Rchr
J-GLOBAL ID:200901055955050794
Update date: Aug. 24, 2024
Kanasaki Junichi
カナサキ ジュンイチ | Kanasaki Junichi
Affiliation and department:
Job title:
Others
Research field (2):
Thin-film surfaces and interfaces
, Semiconductors, optical and atomic physics
Research keywords (8):
低次元系物質
, 光学分光測定
, トンネル顕微鏡
, 時間・角度分解光電子分光
, ナノ構造創成
, キャリア動力学
, 半導体
, 励起物質科学
Research theme for competitive and other funds (24):
- 2023 - 2026 光励起法によるグラフェン薄膜の原子層数精密制御法の確立
- 2023 - 2024 光励起による炭素系2次元原子層物質の超精密構造制御
- 2020 - 2024 マルチ軸機械歪を印加した超高歪ウルトラ薄膜化ゲルマニウムによる室温電流注入光利得
- 2019 - 2023 時間・角度分解光電子差分分光による正孔動力学多次元イメージ法の開発
- 2016 - 2019 極限時空間分光法の開発と光誘起構造相転移研究への応用
- 2011 - 2014 フェムト秒時間分解光電子分光による半導体価電子正孔系の超高速動力学
- 2007 - 2013 光誘起構造相転移動力学の研究
- 2005 - 2008 低エネルギー電子線励起による半導体表面構造の不安定性
- 2005 - 2008 半導体表面二次元凝縮相における励起物性の研究
- 2007 - 可視光励起によるグラファイト・ダイヤモンド構造相転移に関する研究
- 2007 - 光励起プロセスによる半導体表面構造のナノ制御
- 2003 - 2005 シリコン(001)表面における光誘起結合切断と新表面構造相の創成
- 1999 - 2002 電子励起を用いた原子分子操作
- 1999 - 2002 レーザー光による表面原子操作に関する研究
- 1999 - 2001 化合物半導体における光誘起構造変化に関する研究
- 1997 - 2000 フェムト秒分光法による半導体再構成表面の光誘起原子過程の研究
- 1996 - 1999 半導体表面における光誘起構造変化
- 1993 - 1996 「レーザー誘起原子放出を用いた表面微量欠陥の定量法の確立
- 1995 - 半導体表面欠陥のキャラクタライゼイションおよびレーザー誘起原子放出法を用いた欠 陥制御・除去に関する研究
- 1993 - 1994 半導体表面における光科学エッチングの初期過程の研究
- 1987 - 1992 固体における電子励起誘起原子過程の研究
- 1992 - 1992 レーザー誘起原子放出によるシリコン表面欠陥の制御
- Laser-Induced Structural Changes and Desorption
- Formation of New Surface Phase by Electronic Excitations
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Papers (75):
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Eiichi Inami, Keita Nishioka, Jun’ichi Kanasaki. Atomic-scale view of the photoinduced structural transition to form sp3-like bonded order phase in graphite. Scientific Reports. 2023. 13. 1. 21439-1-9
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Ryosuke Horie, Ryuichi Hirosue, Jun'ichi Kanasaki, Kenji Kisoda, Isamu Yamamoto, Junpei Azuma, Kazutoshi Takahashi. Optical film-thinning of few-layer graphene epitaxially grown on 4H-SiC(0001) surface : Robustness of monolayer-graphene against the photoexcitation. Journal of Physics: Condensed Matter. 2023. 35. 19. 195401-1-7
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Hiroshi Tanimura, Katsumi Tanimura, Jun'ichi Kanasaki. Surface exciton formation on InP(110)-(1x1) studied by time- and angle-resolved photoemission spectroscopy. Physical Review B. 2023. 107. 7. 075304-1-10
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Katsumi Tanimura, Hiroshi Tanimura, Jun'ichi Kanasaki. Ultrafast dynamics of photoinjected electrons at the nonthermal regime in the intra-Γ-valley relaxation in InP studied by time- and angle-resolved photoemission spectroscopy. Physical Review B. 2022. 106. 12
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Hiroshi Tanimura, Katsumi Tanimura, Jun'ichi Kanasaki. Ultrafast relaxation of photoinjected nonthermal electrons in the Γ valley of GaAs studied by time- and angle-resolved photoemission spectroscopy. Physical Review B. 2021. 104. 24
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MISC (11):
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Yuhsuke YASUTAKE, Jun’ich KANASAKI, Susumu FUKATSU. Ultrafast Relaxation of Photoexcited Hot Electrons in Ge Due To Intervalley Scattering and Their Potentially Useful Properties. 2022
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J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu. Ultrafast Dynamics of Photoinjected Holes in the Valence Band of Silicon Studied by Two-Photon Photoelectron Differential Spectroscopy. Active Report, Synchrotron Light Application Center. 2022. 48-49
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Ryosuke Horie, Ryuichi Hirosue, Jun'ichi Kanasaki, Isamu Yamamoto, Junpei Azuma, Kazutosi Takahashi. Photoinduced Structural Modifications of Few-Layer Graphene Epitaxially Grown on 4H-SiC(0001). Active Report, Synchrotron Light Application Center. 2022. 68-69
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J. Kanasaki, I. Yamamoto, J. Azuma. Ultrafast Dynamics of Photoinjected Holes in the Valence Bands of Silicon Studied by Two-Photon Photoelectron Differential Spectroscopy. Active Report, Synchrotron Light Application Center. 2020
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Jun’ichi Kanasaki, Isamu Yamamoto, Junpei Azuma, S. Fukatsu. Momentum Space View of Ultrafast Dynamics of Highly Energetic Electrons in Photo-Excited Germanium. Active Report, Synchrotron Light Application Center. 2018
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Lectures and oral presentations (20):
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Ultrafast relaxation dynamics of photoinjected valence holes in semiconductors by time- and angle-resolved photoemission spectroscopy
(Meeting Abstracts of the Physical Society of Japan 2016)
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19pBH-4 Ultrafast non-radiative capture of hot electrons in the conduction band by surface point defects on GaAs(110)
(Meeting Abstracts of the Physical Society of Japan 2016)
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24aCP-12 Ultrafast momentum relaxation followed by energy relaxation of photoinjected hot electrons in semiconductors II
(Meeting Abstracts of the Physical Society of Japan 2015)
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24aCP-11 Time-resolved photoemission spectroscopy for impact ionization in narrow-gap semiconductor
(Meeting Abstracts of the Physical Society of Japan 2015)
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24aAS-11 Baulk-to-surface scattering of photoexcited carriers in semiconductors: Ge(111)-c(2x8)
(Meeting Abstracts of the Physical Society of Japan 2015)
more...
Education (5):
- 1987 - 1988 名古屋大学大学院 理学研究科 物理学専攻
- - 1987 Nagoya University
- - 1987 Nagoya University Graduate School, Division of Engineering Crystal Materials Engineering
- - 1985 Nagoya University School of Engineering
- - 1985 Nagoya University Faculty of Engineering
Professional career (1):
Work history (8):
- 2022/04 - 現在 Osaka Metropolitan University Graduate School of Engineering Division of Mechanical Engineering Professor
- 2019/04 - 2022/03 Osaka City University Professor
- 2009/04 - 2019/03 Osaka University The Institute of Scientific and Industrial Research
- 2007/04 - 2009/03 Osaka University The Institute of Scientific and Industrial Research
- 2004/09 - 2007/03 Osaka University The Institute of Scientific and Industrial Research
- 1999/09 - 2004/08 Osaka City University Faculty of Engineering
- 2003 - 阪大産業科学ナノテクノロジーセンター 客員助教授
- 1988 - 1999 Nagoya University School of Science
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Association Membership(s) (3):
日本表面真空学会
, 日本物理学会
, 応用物理学会
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