Rchr
J-GLOBAL ID：200901057145521092   Update date: Sep. 26, 2024

Migita Shinji

Migita Shinji
Affiliation and department：
National Institute of Advanced Industrial Science and Technology Device Technology Research Institute

About National Institute of Advanced Industrial Science and Technology Device Technology Research Institute


Job title： Principal Research Manager
Homepage URL  (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=S69802894
Research field  (2)： Metallic materials ,  Electronic devices and equipment
Research theme for competitive and other funds  (3)：
  • 2020 - 2023 Exploration of novel physical properties of HfO2-based ferroelectrics by controlling polarization fluctuations
  • 2020 - 2023 Investigation of steep-slope transistor using ferroelectric polarization dynamics
  • 高誘電体をゲートに用いたトランジスタの高性能化
Papers (179)：
  • Yukinori Morita, Takashi Onaya, Shutaro Asanuma, Hiroyuki Ota, Shinji Migita. Development of ferroelectricity with crystallographic phase transformation in Hf0.5Zr0.5O2 thin films upon initial stimulation of an electric field exceeding the coercive field. Japanese Journal of Applied Physics. 2024. 63. 4. 04SP53-04SP53
  • Leonid Bolotov, Shinji Migita, Ryouta Fujio, Manabu Ishimaru, Shogo Hatayama, Noriyuki Uchida. Impact of annealing on electric and elastic properties of 10-nm Hf0.5Zr0.5O2 films prepared on Si by sputtering. Microelectronic Engineering. 2022. 258
  • Mohit Mohit, Yuli Wen, Yuki Hara, Shinji MIGITA, Hiroyuki OTA, Yukinori Morita, Keisuke OHDAIRA, Eisuke TOKUMITSU. Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment. Japanese Journal of Applied Physics. 2022
  • Yuki Hara, Mohit, Tatsuya Murakami, Shinji Migita, Hiroyuki Ota, Yukinori Morita, Eisuke Tokumitsu. Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering. Japanese Journal of Applied Physics. 2021. 60
  • Kenshi Takada, Mikio Murase, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Norifumi Fujimura, Takeshi Yoshimura. Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response. Applied Physics Letters. 2021. 119. 3
ｍore...
MISC (103)：
  • 福田浩一, 浅井栄大, 服部淳一, 森貴洋, 森田行則, 昌原明植, 右田真司, 太田裕之, 遠藤和彦, 松川貴. TFETの短チャネル効果と界面ポテンシャル. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.21p-PB3-1
  • 森貴洋, 浅井栄大, 服部淳一, 福田浩一, 大塚慎太郎, 森田行則, 大内真一, 更田裕司, 右田真司, 水林亘, et al. 等電子トラップ技術による相補型TFET回路の特性向上. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2017. 64th. ROMBUNNO.16p-412-1
  • 森田行則, 福田浩一, LIU Y. X, 森貴洋, 水林亘, 大内真一, 更田裕司, 大塚慎太郎, 右田真司, 昌原明植, et al. IoT応用に向けたフィン型トンネルFETによるCMOSインバーターの形成. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2017. 64th. ROMBUNNO.16p-412-3
  • 森 貴洋, 浅井 栄大, 服部 淳一, 福田 浩一, 大塚 慎太郎, 森田 行則, 大内 真一, 更田 裕司, 右田 真司, 水林 亘, et al. 招待講演 等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上 (シリコン材料・デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2017. 116. 448. 1-4
  • 松川貴, 森貴洋, 森田行則, 大塚慎太郎, LIU Y, 大内真一, 更田裕司, 右田真司, 昌原明植. FinFET寄生抵抗ばらつきの解析:エクステンションドーピング条件の影響. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2016. 77th. ROMBUNNO.13p-B13-6
ｍore...
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