Rchr
J-GLOBAL ID：200901059371803885   Update date: Nov. 12, 2024

Chichibu Shigefusa

チチブ シゲフサ | Chichibu Shigefusa
Affiliation and department：
Tohoku University Institute of Multidisciplinary Research for Advanced Materials, Division of Measurements

About Tohoku University Institute of Multidisciplinary Research for Advanced Materials, Division of Measurements


Homepage URL  (1)： http://www2.tagen.tohoku.ac.jp/lab/chichibu/html/index-j.html
Research field  (4)： Electric/electronic material engineering ,  Crystal engineering ,  Applied materials ,  Semiconductors, optical and atomic physics
Research keywords  (5)： 半導体量子光物性 ,  半導体電子工学 ,  半導体結晶光物性 ,  Oxide Semiconductors ,  Nitride Semiconductors
Research theme for competitive and other funds  (21)：
  • 2023 - 2025 グラファイト型層状窒化ホウ素の気相合成と光電子素子材料としての物性解明
  • 2022 - 2025 六方晶および閃亜鉛鉱構造窒化ホウ素の高温気相エピタキシャル成長と導電性制御
  • 2021 - 2025 A study of the activation mechanism of implanted impurities and control of point defect in group III nitrides
  • 2020 - 2023 六方晶窒化ボロン半導体の直接遷移型化と深紫外励起子発光ダイナミクスの研究
  • 2020 - 2023 Synthesis of high quality single crystals for sience of Boron Nitride
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Papers (571)：
  • Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, et al. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 2024. 135. 18. 185701 1-20
  • K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, M. Saito, D. Tomida, A. Uedono, S. Ishibashi, T. Ishiguro, S. F. Chichibu. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method. Applied Physics Letters. 2024. 124. 18. 181103 1-6
  • Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, et al. Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation. physica status solidi (b). 2024. 261. 2400060 1-10
  • Kohei Shima, Tin S. Cheng, Christopher J. Mellor, Peter H. Beton, Christine Elias, Pierre Valvin, Bernard Gil, Guillaume Cassabois, Sergei V. Novikov, Shigefusa F. Chichibu. Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports. 2024. 14. 1. 169 1-8
  • T. Onuma, K. Kudo, M. Ono, W. Kosaka, K. Shima, K. Ishii, K. Kaneko, Y, Ota, T. Yamaguchi, et al. Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1-xO. Journal of Applied Physics (2023). 2023. 134. 2. 025102 1-11
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MISC (236)：
  • Development of GaN Single Crystal Growth Technology by Low-Pressure Acidic Ammonothermal Method. 2021. 72. 13-20
  • 小島一信, 秩父重英, 吉田悠来, 白岩雅輝, 菅野敦史, 山本直克, 淡路祥成, 平野光, 長澤陽祐, 一本松正道. 特集:東北大学グリーンネストICT "LEDを用いたノイズに強い光無線通信技術の研究 ~真夏の直射日光下において毎秒1ギガビット以上の通信速度を実現~". 電波技術協会報FORN. 2021. 342. 18-21
  • 小島一信, 吉田悠来, 白岩雅輝, 淡路祥成, 菅野敦史, 山本直克, 平野光, 長澤陽祐, 一本松正道, 秩父重英. Gbps-class solar-blind optical wireless communication based on deep-ultraviolet AlGaN LEDs. 電子情報通信学会大会講演論文集(CD-ROM). 2021. 2021
  • 宮澤篤也, 太田悠斗, 松川真也, 林幸佑, 中川央也, 川崎晟也, 安藤悠人, 本田善央, 天野浩, 天野浩, et al. Effect of crystal quality and device structure on detection characteristics in BGaN neutron detector: part2. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 嶋紘平, LU Weifang, 小島一信, 上山智, 竹内哲也, 秩父重英, 秩父重英. Spatio-time-resolved cathodoluminescence study of InGaN/GaN multiquantum shells. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
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Patents (15)：
  • 結晶製造用圧力容器
  • 結晶製造用圧力容器
  • 結晶製造用圧力容器
  • 中性子半導体検出構造、中性子半導体検出器、及び中性子半導体検出構造の製造方法
  • 窒化物半導体紫外線発光素子
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Books (11)：
  • 応用電子物性分科会誌
    応用電子物性分科会 2024
  • 次世代パワーエレクトロニクスの課題と評価技術
    S&T出版, 岩室憲幸監修 2022 ISBN:9784907002930
  • 次世代パワーエレクトロニクスの課題と評価技術
    S&T出版, 岩室憲幸監修 2022 ISBN:9784907002930
  • 次世代パワー半導体の開発・評価と実用化
    (株)エヌ・ティー・エス, 岩室憲幸監修 2022
  • Ammonothermal Synthesis and Crystal Growth of Nitrides edited by E. Meissner and R. Niewa
    Springer (Springer Series in Materials Sciences, Vol. 304) 2021
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Lectures and oral presentations  (731)：
  • Room-temperature photoluminescence lifetimes of Mg-doped p-type GaN layers grown by halide vapor phase epitaxy
    (12th International Workshop on Nitride Semiconductors (IWN2024) 2024)
  • Minority carrier capture coefficients of major midgap recombination centers in the state-of-the-art GaN substrates, epilayers, and Mg-implanted layers
    (12th International Workshop on Nitride Semiconductors (IWN2024) 2024)
  • Spatio-time-resolved cathodoluminescence study of InGaN/GaN multiquantum shells
    (12th International Workshop on Nitride Semiconductors (IWN2024) 2024)
  • エミッション顕微鏡を用いたUV-C LEDにおける中長期劣化の観察
    (2024年第85回応用物理学会秋季学術講演会 2024)
  • Cathodoluminescence studies of hexagonal BN polytypes and monolayer BN
    (European Materials Research Society, 2024 Fall Meeting, Symposium P: Boron Nitride: from advanced growth approaches to advanced applications 2024)
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Works (1)：
  • 科技機構創造科学技術推進事業中村不均一結晶プロジェクト
    2001 -
Education (3)：
  • 1990 - 1994 Keio University Graduate School of Science and Technology
  • 1986 - 1988 Keio University Graduate School of Science and Technology
  • 1982 - 1986 Keio University Faculty of Science and Technology
Professional career (1)：
  • 博士(工学) (慶應義塾大学)
Work history (10)：
  • 2007/02 - 現在 Tohoku University Institute of Multidisciplinary Research for Advanced Materials
  • 2001/10 - 2007/03 科学技術振興機構 創造科学技術推進事業 中村不均一結晶プロジェクト不均一結晶評価グループリーダー
  • 1999/05 - 2007/01 筑波大学 助教授 物理工学系
  • 1999/04 - 1999/04 筑波大学 助教授 物質工学系
  • 1994/04 - 1999/03 東京理科大学 嘱託助手 理工学部電気工学科
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Committee career (3)：
  • 2011/04 - 現在 日本学術振興会 第162委員会学術委員
  • 2008/04 - 2009/03 応用物理学会 論文賞審査委員
  • 2008/04 - 2009/03 応用物理学会 論文賞審査委員
Awards (16)：
  • 2021/11 - Applied Physics Letters Editor's Pick Improved minority carrier lifetime in p-type GaN segments prepared by vacancy- guided redistribution of Mg
  • 2021/07 - The Japan Society of Applied Physics 43rd JSAP Outstanding Paper Award Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
  • 2019/07 - The 13th International Conference on Nitride Semiconductors (ICNS-13) Best poster Award Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN
  • 2019/06 - 19th International Workshop on Junction Technology (IWJT2019), Best Paper Award "Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes"
  • 2017/07 - 応用物理学会 応用物理学会フェロー表彰
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Association Membership(s) (1)：
応用物理学会
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