Chichibu Shigefusa

チチブシゲフサ | Chichibu Shigefusa

Affiliation and department：
Homepage URL (1)： http://www2.tagen.tohoku.ac.jp/lab/chichibu/html/index-j.html

Research field (4)： Electric/electronic material engineering , Crystal engineering , Applied materials , Semiconductors, optical and atomic physics

Research keywords (5)：半導体量子光物性 , 半導体電子工学 , 半導体結晶光物性 , Oxide Semiconductors , Nitride Semiconductors

Research theme for competitive and other funds (21)：

2023 - 2025 グラファイト型層状窒化ホウ素の気相合成と光電子素子材料としての物性解明
2022 - 2025 六方晶および閃亜鉛鉱構造窒化ホウ素の高温気相エピタキシャル成長と導電性制御
2021 - 2025 A study of the activation mechanism of implanted impurities and control of point defect in group III nitrides
2020 - 2023 六方晶窒化ボロン半導体の直接遷移型化と深紫外励起子発光ダイナミクスの研究
2020 - 2023 Synthesis of high quality single crystals for sience of Boron Nitride

2019 - 2022 LED-based optical wireless communications in the solar-blind band

2016 - 2021 Spatio-time-resolved cathodoluminescence studies on singularity crystals

2017 - 2020 Developement and application of spatio-time-resolved cathodoluminescence for wide bandgap nanostructures

2016 - 2018 Luminescence dynamics of BN exhibiting large excitonic effects in the deep ultraviolet wavelength region

2015 - 2017 Realization of high-power and high-efficiency light-emitting devices based on AlInN

2010 - 2014 Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operation

2011 - 2012 Development of a spatio-time-resolved cathodoluminescence spectroscopy technique applicable for wide bandgap semiconductors through the generation and focusing of high-brightness femtosecond pulsed photoelectron beams

2006 - 2010 Study of point defects and light-emitting dynamics in group-III nitride semiconductors

2007 - 2009 Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering method

2004 - 2006 Development of oxide semiconductor and dielectric electronics using helicon-wave-excited-plasma sputtering methods

2003 - 2004 酸化亜鉛系半導体を用いた室温動作励起子ポラリトンレーザ実現に関する基礎研究

2001 - 2002 ヘリコン波励起プラズマスパッタエピタキシー法の提案と酸化物半導体ナノ構造の形成

2001 - 2002 STUDY OF POINT DEFECTS IN GaN AND RELATED COMPOUND SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATION

2000 - 2002 Investigation of a solar battery using the environmentally friendly semiconductor : beta-FeSi_2

1999 - 2000 窒化物半導体量子井戸構造の光学遷移過程における励起子局在効果の研究

1995 - 1995 MOCVD成長高品質銅カルコパイライト半導体エピタキシャル層の発光素子化検討

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Papers (570)：

Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, et al. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 2024. 135. 18. 185701 1-20
K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, M. Saito, D. Tomida, A. Uedono, S. Ishibashi, T. Ishiguro, S. F. Chichibu. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method. Applied Physics Letters. 2024. 124. 18. 181103 1-6
Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, et al. Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation. physica status solidi (b). 2024. 261. 2400060 1-10
Kohei Shima, Tin S. Cheng, Christopher J. Mellor, Peter H. Beton, Christine Elias, Pierre Valvin, Bernard Gil, Guillaume Cassabois, Sergei V. Novikov, Shigefusa F. Chichibu. Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports. 2024. 14. 1. 169 1-8
T. Onuma, K. Kudo, M. Ono, W. Kosaka, K. Shima, K. Ishii, K. Kaneko, Y, Ota, T. Yamaguchi, et al. Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1-xO. Journal of Applied Physics (2023). 2023. 134. 2. 025102 1-11

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MISC (236)：

Development of GaN Single Crystal Growth Technology by Low-Pressure Acidic Ammonothermal Method. 2021. 72. 13-20
小島一信, 秩父重英, 吉田悠来, 白岩雅輝, 菅野敦史, 山本直克, 淡路祥成, 平野光, 長澤陽祐, 一本松正道. 特集:東北大学グリーンネストICT "LEDを用いたノイズに強い光無線通信技術の研究 ~真夏の直射日光下において毎秒1ギガビット以上の通信速度を実現~". 電波技術協会報FORN. 2021. 342. 18-21
小島一信, 吉田悠来, 白岩雅輝, 淡路祥成, 菅野敦史, 山本直克, 平野光, 長澤陽祐, 一本松正道, 秩父重英. Gbps-class solar-blind optical wireless communication based on deep-ultraviolet AlGaN LEDs. 電子情報通信学会大会講演論文集(CD-ROM). 2021. 2021
宮澤篤也, 太田悠斗, 松川真也, 林幸佑, 中川央也, 川崎晟也, 安藤悠人, 本田善央, 天野浩, 天野浩, et al. Effect of crystal quality and device structure on detection characteristics in BGaN neutron detector: part2. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
嶋紘平, LU Weifang, 小島一信, 上山智, 竹内哲也, 秩父重英, 秩父重英. Spatio-time-resolved cathodoluminescence study of InGaN/GaN multiquantum shells. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th

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Patents (15)：

結晶製造用圧力容器
結晶製造用圧力容器
結晶製造用圧力容器
中性子半導体検出構造、中性子半導体検出器、及び中性子半導体検出構造の製造方法
窒化物半導体紫外線発光素子

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Books (11)：

応用電子物性分科会誌
応用電子物性分科会 2024
次世代パワーエレクトロニクスの課題と評価技術
S&T出版, 岩室憲幸監修 2022 ISBN:9784907002930
次世代パワーエレクトロニクスの課題と評価技術
S&T出版, 岩室憲幸監修 2022 ISBN:9784907002930
次世代パワー半導体の開発・評価と実用化
(株)エヌ・ティー・エス, 岩室憲幸監修 2022
Ammonothermal Synthesis and Crystal Growth of Nitrides edited by E. Meissner and R. Niewa
Springer (Springer Series in Materials Sciences, Vol. 304) 2021

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Lectures and oral presentations (727)：

エミッション顕微鏡を用いたUV-C LEDにおける中長期劣化の観察
(2024年第85回応用物理学会秋季学術講演会 2024)
Cathodoluminescence studies of hexagonal BN polytypes and monolayer BN
(European Materials Research Society, 2024 Fall Meeting, Symposium P: Boron Nitride: from advanced growth approaches to advanced applications 2024)
ワイドギャップ半導体の空孔型欠陥と発光ダイナミクス計測-ZnOとGaNの類似点と相違点-
(透明酸化物光・電子材料研究会第9回(2024年度第2回)研究会チュートリアル「材料設計・作製・物性評価の基礎および応用」 2024)
275 nm帯AlGaN LEDの初期劣化機構
(応用電子物性分科会/結晶工学分科会合同研究会「窒化物半導体発光デバイスの最前線」 2024)
Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride grown on a highly oriented pyrolytic graphite substrate
(The 7th International Workshop on UV Materials and Devices (IWUMD-VII) 2024)

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Works (1)：

科技機構創造科学技術推進事業中村不均一結晶プロジェクト
2001 -

Education (3)：

1990 - 1994 Keio University Graduate School of Science and Technology
1986 - 1988 Keio University Graduate School of Science and Technology
1982 - 1986 Keio University Faculty of Science and Technology

Professional career (1)：

博士(工学) (慶應義塾大学)

Work history (10)：

2007/02 - 現在 Tohoku University Institute of Multidisciplinary Research for Advanced Materials
2001/10 - 2007/03 科学技術振興機構創造科学技術推進事業中村不均一結晶プロジェクト不均一結晶評価グループリーダー
1999/05 - 2007/01 筑波大学助教授物理工学系
1999/04 - 1999/04 筑波大学助教授物質工学系
1994/04 - 1999/03 東京理科大学嘱託助手理工学部電気工学科

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Committee career (3)：

2011/04 - 現在日本学術振興会第162委員会学術委員
2008/04 - 2009/03 応用物理学会論文賞審査委員
2008/04 - 2009/03 応用物理学会論文賞審査委員

Awards (16)：

2021/11 - Applied Physics Letters Editor's Pick Improved minority carrier lifetime in p-type GaN segments prepared by vacancy- guided redistribution of Mg
2021/07 - The Japan Society of Applied Physics 43rd JSAP Outstanding Paper Award Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
2019/07 - The 13th International Conference on Nitride Semiconductors (ICNS-13) Best poster Award Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN
2019/06 - 19th International Workshop on Junction Technology (IWJT2019), Best Paper Award "Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes"
2017/07 - 応用物理学会応用物理学会フェロー表彰

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Association Membership(s) (1)：

応用物理学会

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