Yodo Tokuo

ヨドトクオ | Yodo Tokuo

Affiliation and department：
Homepage URL (1)： http://www.oit.ac.jp/elc/optfunc/

Research field (1)： Electric/electronic material engineering

Research keywords (2)：光機能素子材料 , Materials for Opto-Functional Device

Research theme for competitive and other funds (2)：

1992 - GaAs/Si, GaN/Si及びInNエピタキシャル膜の高品質化
1992 - Fabrication of high-quality GaAs, GaN, InN epitaxial films on Si substrates

MISC (62)：

Strong bandedge luminescence from InN films grown on Si Substrates by electron cyclotron resonance-assisted molecular beam, Tokuo Yodo, Hiroaki Yona, Hironori Ando, Daiki Nosei, Yoshiyuki Harada. Appl. Phys. Lett. 2002. 80(6), 968-970
Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBE, T.Yodo, H.Ando, D.Nosei, Y.Harada and M.Tamura. J. Cryst. Growth. 2002. 237-239, 1104-1109
Influences of substrate anneal before growth on initial growth process and charabteristics for GaN heteroepitaxial layers grown on Si(111) substrates by electron cyclotron resonance plasuma-assisted molecular-beam apitaxy, T.Yodo, M.Yamada, M.Araki, N.・・・. 21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract. 2002. B14, 37-40
Characterization of GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, T.Hirano and Y.Harada. 21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract. 2002. B4, 13-16
Growth and characterizeition of InN heteroepitaxial layers grown on Si(111) substrates by molecular beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, H.Yona, K.Iwai, N.Toyotomi and Y.Harada. 21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract. 2002. B3, 9-12

ｍore...

Works (3)：

Education (3)：

Professional career (1)：

Work history (10)：

Show all

Association Membership(s) (2)：

結晶工学分科会 , 応用物理学会

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page