Rchr

J-GLOBAL ID：200901088164582240 Update date: Oct. 21, 2021

Asami Seiji

アサミセイジ | Asami Seiji

Affiliation and department：

Research field (3)： Electronic devices and equipment , Electric/electronic material engineering , Thin-film surfaces and interfaces

Research keywords (6)：電子デバイス・機器工学 , 表面界面物性 , 電子材料工学 , Electron Devices and Apparatus Engineering , Surface Physics , Electronic Materials Engineering

Research theme for competitive and other funds (4)：

システムLSIの設計試作
電子材料の分析評価
Design and Trial Manufacture of System LSI
Surface analysis of electronic materials

MISC (7)：

Hideki Nakazawa, Maki Suemitsu, Seiji Asami. Gas-source MBE of SiC/Si using monomethylsilane. Thin Solid Films. 2000. 369. 1. 269-272
Formation of High Quality SiC on Si(100)at 900°C using Monomethylsilane Gas-Source MBE. Materials Science Forum. 2000. 338-342. 269
オージェ電子分光法によるSi-Ge系結晶とSi酸化膜の定量分析. 仙台電波工業高等専門学校研究紀要. 1996. 26. 9
Quantitative analysis of Si-Ge mixed crystals and silicon oxide films by Auger electron Spectroscopy. Research Reports of Sendai National College of Technology. 1996. 26. 9
Surface Chemistry Basis for Kinetically Self-limited Epitaxial Growth from Si₂H₆/Ge₂H₆ Mixtures 「(共著)」. Topical Conference on the Synthesis, Analysys and Growth of Electronic Materials (AIChE National Meeting). 1994

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Books (2)：

アナログディジタル変換 - コンピュータ回路工学論(4)「(共著)」
日刊工業新聞社 1995
論理回路の基礎-コンピュータ回路工学編(]G0024[) 「(共著)」
日刊工業新聞社 1993

Education (4)：

- 1968 Tohoku University
- 1968 Tohoku University Graduate School, Division of Engineering
- 1966 Tohoku University Faculty of Engineering
- 1966 Tohoku University Faculty of Engineering

Professional career (1)：

(BLANK)

Association Membership(s) (2)：

日本表面科学会 , 応用物理学会

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