Rchr
J-GLOBAL ID:200901091623429583
Update date: Dec. 18, 2024
SANO Nobuyuki
サノ ノブユキ | SANO Nobuyuki
Affiliation and department:
Job title:
Professor
Research field (3):
Mathematical physics and basic theory
, Computational science
, Electronic devices and equipment
Research keywords (10):
Device Simulation
, Nonequilibrium Green's Functions Method
, Scattering Theory
, Monte Carlo Method
, Deep Learning
, Device Physics
, Electron Device
, Nanotechnology
, Quantum Electron Transport
, Nonequilibrium Statistical Physics
Research theme for competitive and other funds (24):
- 2019 - 2020 ナノデバイス物理モデリング・デバイスシミュレーション
- 2019 - 2020 ナノデバイス
- 2018 - 2020 次世代の産業を支える新機能デバイス・高性能材料の創生
- 2015 - 2017 次世代の産業を支える新機能デバイス・高性能材料の創生
- 2015 - 2017 Coulomb Interaction in Atomic-Layer FET Devices and Realistic Prediction of Device Characteristics
- 2012 - 2014 Effects of the Coulomb Interaction and Realistic Device Analyses in 3D Nanoscale Semiconductor Devices
- 2007 - 2011 経済産業省ナノエレクトロニクス・プロジェクト「半古典輸送と量子輸送を融合したナノデバイス・シミュレーションの研究開発」
- 2009 - 2011 Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices
- 2008 - 2010 宇宙線中性子起因ソフトエラーシミュレーションに関する研究
- 2006 - 2008 Study of High-Density Electron Transport by Three-Dimensional Particle-Based Simulations under Nano-Scale Devices
- 2003 - 2006 Theoretical Study of Electron-Impurity Coulomb Interaction in Deca-nano Devicese
- 2005 - 2005 高エネルギー粒子による半導体誤動作のシミュレーション解析
- 2002 - 2003 Device Modeling of Discrete Impurities for the Analyses of Threshold Voltage Fluctuations in Ultrasmall Semiconductor Devices
- 2002 - 2003 Theoretical Study on Impact Ionization in SiC
- 2002 - 2003 Theoretical Study on Impact Ionization in SiC?
- 2001 - 2002 Discrete Impuruty Modeling and Molecular Dynamics for 3-D Device Simulations
- 1997 - 2002 Simulation Study on High-Field Carrier Transport in Semiconductors
- 1996 - 2002 Study on Device Simulation via Monte Carlo Method
- 1995 - 2002 Study on Carrier Transport in Semiconductor Devices
- 1998 - 2000 Study on Device Lifetime Uncertainty asscociated with Substrate Current Fluctuation in Ultrasmall Semiconductor Devices
- 1998 - 2000 Theoretical Study on Quantum Transport in Semiconductors
- 1997 - 2000 Advanced Device Simulation Analyses on Fluctuations of Device Properties and the Problem Extraction for Large Integration.??
- 1997 - 1999 Theoretical Study on Nonequilibrium Quantum Transport
- 1995 - Study on Carrier Transport in Nanoscale Semiconductor Devices
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Papers (161):
-
Sano, Nobuyuki. Shallow p-n Junctions under Discrete Impurities in Semiconductor Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2024. ED-71. 965-970
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Sano, Nobuyuki. Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carrier. 2023 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2023). 2023. 1-4
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佐野, 伸行. Semiconductor Device Modeling. SONY Special Lecture. 2022
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佐野, 伸行. Physical Modeling and Simulation of Semiconductor Devices, and their Implications. Sony Public Lecture. 2022
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Sano, Nobuyuki, Fukui, Takayuki. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Monte Carlo Simulation Scheme. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 11. 5394-5399
more...
Books (9):
-
2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016)
IEEE 2016 ISBN:9781467386098
-
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS
TRANS TECH PUBLICATIONS LTD 2011
-
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING
IEEE 2009 ISBN:9781424456390
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PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1
WILEY-V C H VERLAG GMBH 2008
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2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2
IEEE 2007 ISBN:9781424418916
more...
Lectures and oral presentations (24):
-
キャリアの捕獲・励起過程を導入した自己無撞着 モンテカルロデバイスシミュレーション
(シリコン材料・デバイス(SDM)研究会集会)
-
Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carrier
(2023 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2023))
-
Physical Modeling and Simulation of Semiconductor Devices, and their Implications
(Sony Public Lecture)
-
不純物の離散性に伴った半導体デバイスモデリングの基本的側面 II ~半導体ナノ構造でのランダム不純物~
(電子情報通信学会 シリコン材料・デバイス(SDM)研究会集会 2019)
-
Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells
(The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019)
more...
Education (2):
- - 1988 Auburn University Graduate School, Division of Physics Theoretical Physics
- 1982 - 1983 University of Tsukuba Graduate School, Division of Physics Physics
Work history (6):
Committee career (16):
- 2006 - 現在 HCIS プログラム委員、実行委員
- 2003 - 現在 応用物理学会シリコンテクノロジー分科会 常任理事
- 2001 - 現在 文部科学省 科学技術動向調査研究センタ 専門調査員
- 2000 - 現在 Journal of Computational Electronics Associate Editor
- 2000 - 現在 編集委員
- 1998 - 現在 IWCE Advisory Committee Member
- 2017 - 2018 文部科学省 工学系教育の在り方に関する調査研究WG
- 2003 - 2018 Chair, Program Committee (SISPAD-2005)
- 2008 - 2013 Associate Editor
- 2008 - 2013 Japanese Journal of Applied Physics 編集委員
- 2011 - 2011 新エネルギー・産業技術総合開発機構 MIRAIプロジェクト評価委員
- 2007 - 2008 IEDMプログラム委員
- 2006 - 2007 SSDM-2007 実行委員
- 2001 - 2003 Si nanoelectronics International Workshop プログラム委員
- 2001 - 2002 経済産業省 IT基盤技術開発第1委員会 委員
- 1999 - 2001 SSDM プログラム委員
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Awards (2):
- 1992 - Outstanding Research Award
- 1988 - Outstanding Research Award (Auburn University)
Association Membership(s) (4):
IEEE
, American Physical Society
, 応用物理学会シリコンテクノロジー分科会
, The Japan Society of Applied Physics
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