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J-GLOBAL ID：200901098442481456   Update date: Oct. 09, 2024

Yamaguchi Atsushi

ヤマグチ アツシ | Yamaguchi Atsushi
Affiliation and department：
Kanazawa Institute of Technology Kanazawa Institute of Technology College of Engineering Department of Electrical and Electronic Engineering

About Kanazawa Institute of Technology Kanazawa Institute of Technology College of Engineering Department of Electrical and Electronic Engineering


Other affiliations (2)：
Research field  (1)： Semiconductors, optical and atomic physics
Research keywords  (4)： optical properties ,  valence band ,  III-nitride ,  semiconductor laser
Papers (135)：
  • Keito Mori-Tamamura, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Junji Hirama, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya. Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method. Science and Technology of Advanced Materials: Methods. 2024. 4. 1
  • Hiroki Tosa, Keito Mori-Tamamura, Atsushi A. Yamaguchi. Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements by utilizing Helmholtz resonance. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP81-02SP81
  • Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya. Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage. Japanese Journal of Applied Physics. 2023. 63. 1. 01SP19-01SP19
  • 神野翔綺, 森 恵人, 山口敦史, 草薙 進, 蟹谷裕也, 富谷茂隆, 工藤喜弘. ストライプコアGaN基板上InGaN量子井戸における顕微PA・PL同時ラインスキャン測定. 2023. 123. 290. 52-55
  • 土佐宏樹, 森 恵人, 山口敦史. ヘルムホルツ共鳴利用と光音響セル内空気加圧によるInGaN量子井戸の光音響・発光同時計測のS/N比改善. 電子情報通信学会技術研究報告. 2023. 123. 290. 48-51
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MISC (34)：
  • YAMAGUCHI Atsushi A., MORI-TAMAMURA Keito. Optical Recombination Processes in Nitride Semiconductors. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • 森恵人, 山口敦史, 大原真穂, 牧野智大, 幸田倫太郎, 濱口達史. Polarization Control of Surface Emission from InGaN Quantum Wells by Applying External Uniaxial Stress. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
  • 土佐宏樹, 森恵人, 山口敦史. Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurement for InGaN quantum wells by utilizing Helmholtz resonance. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
  • 山口敦史, 森恵人, 草薙進, 冨谷茂隆. Absolute Measurement of Emission Internal Quantum Efficiency in III-Nitride Semiconductors by Simultaneous Photo-Acoustic and Photoluminescence Spectroscopy. 日本結晶成長学会誌(CD-ROM). 2022. 48. 4
  • 森恵人, 森本悠也, 袴田舜也, 山口敦史, 草薙進, 蟹谷裕也, 工藤喜弘, 冨谷茂隆. Separate Evaluation of Radiative and Non-Radiative Recombination Lifetimes in InGaN Quantum Wells by Combination of Simultaneous Photoacoustic & Photoluminescence and Time-Resolved Photoluminescence Measurements. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
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Lectures and oral presentations  (255)：
  • 時間分解PL測定によるInGaN量子井戸におけるキャリア拡散の測定
    (第71回応用物理学会春季学術講演会 2024)
  • Determination of deformation potentials of InGaN alloy materials based on photoluminescence polarization measurements under uniaxial stress application
    (SPIE Photonics West 2024 2024)
  • Simultaneous microscopic PA/PL line-scan measurements in InGaN-QWs on a stripe-core GaN Substrate
    (SPIE Photonics West 2024 2024)
  • SrAl2O4:Eu,Dy長残光蛍光体における発光・非発光特性の温度依存性
    (令和5年度 応用物理学会 北陸・信越支部 学術講演会 2023)
  • データ駆動によるInGaN量子井戸の発光減衰曲線の特徴抽出
    (令和5年度 応用物理学会 北陸・信越支部 学術講演会 2023)
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Education (4)：
  • 1988 - 1991 東京大学大学院 理学系研究科 物理学専攻
  • 1986 - 1988 東京大学大学院 理学系研究科 物理学専攻
  • 1984 - 1986 The University of Tokyo Faculty of Science Department of Physics
  • 1982 - 1984 The University of Tokyo College of Arts and Sciences
Association Membership(s) (3)：
日本物理学会 ,  電子情報通信学会 ,  応用物理学会
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