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J-GLOBAL ID：201001062393886034   Update date: May. 08, 2024

Sawano Kentarou

サワノ ケンタロウ | Sawano Kentarou
Affiliation and department：
Tokyo City University Faculty of Engineering, Department of Electrical and Electronic Engineering

About Tokyo City University Faculty of Engineering, Department of Electrical and Electronic Engineering


Job title： Professor
Other affiliations (1)：
Homepage URL  (1)： https://www.comm.tcu.ac.jp/nano_slabo/
Research field  (2)： Crystal engineering ,  Applied materials
Research keywords  (2)： 半導体デバイス ,  Semiconductor device
Research theme for competitive and other funds  (23)：
  • 2023 - 2028 Exploring spin coherence engineering in group IV semiconductor quantum structures
  • 2021 - 2026 フォトニクスとのアナロジーで拓くサーマルフォノンエンジニアリング
  • 2021 - 2024 Investigation on the interface states at strained Si/SiO2 interfaces formed on Si(110) substrates
  • 2019 - 2024 Development of a germanium spin MOSFET
  • 2019 - 2024 Development of Si-based Dirac electron superlattice and its thermoelectric devices based on phonon and electron trapsport physics
Show all
Papers (274)：
  • Michihiro Yamada, Shota Suzuki, Ai I. Osaka, Kazuaki Sumi, Takahiro Inoue, Azusa N. Hattori, Shinya Yamada, Kentarou Sawano, Marwan Dhamrin, Kohei Hamaya. Al-Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys. Materials Science in Semiconductor Processing. 2024. 174
  • Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentaro Sawano, Kohei Hamaya. Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain. Materials Science in Semiconductor Processing. 2023. 167. 15. 107763
  • Shuto Muranaka, Satoshi Nogamida, Kosuke O. Hara, Kentarou Sawano, Yusuke Hoshi. Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers. AIP Advances. 2023. 13. 7
  • Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto. Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures. Materials Science in Semiconductor Processing. 2023. 161. 107476-107476
  • Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Takahiro Inoue, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano. Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning. Applied Physics Express. 2023. 16. 1. 015502-015502
ｍore...
MISC (68)：
  • 千葉カルビン健人, 澤野憲太郎, 渡邊賢司, 谷口尚, 藤田博之, 星裕介. Electromechanical properties of hBN/1L-MoS2 nanomechanical resonators. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
  • 杉浦由和, 菊岡柊也, 我妻勇哉, 金澤玲奈, 星裕介, 山田道洋, 浜屋宏平, 浜屋宏平, 澤野憲太郎. Influences of injection currents on room temperature EL emission peaks from Ge-on-Si (111) LEDs. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
  • 林田隼弥, 野上田聖, 渡邊賢司, 谷口尚, 澤野憲太郎, 星裕介. Thermal stability of hBN-encapsulated molybdenum ditelluride crystals. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 山田航大, 星裕介, 澤野憲太郎. Room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 杉浦由和, 我妻勇哉, 山田航大, 星裕介, 山田道洋, 浜屋宏平, 澤野憲太郎. Room temperature EL from strained Ge-on-Si(111) diode structure. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
ｍore...
Books (4)：
  • 次世代の情報通信技術に向けた シリコン上ゲルマニウム発光デバイス
    化学工業 Vol.73, No. 3, pp 160-166 2022
  • シリコンフォトニクス光配線に向けたゲルマニウム発光素子
    光アライアンス, Vol. 29 , No. 5, pp 19-25 2018
  • 超低消費電力・光電子融合デバイスに向けたゲルマニウムウェハー開発
    MATERIAL STAGE, Vol.17, No.12, pp 57-62 2018
  • Silicon germanium (SiGe) nanostructures
    Woodhead Publishing 2011 ISBN:9781845696894
Lectures and oral presentations  (537)：
  • Observation of photoluminous from SiGe/Ge MQW on Ge-on-Si(111)
    (ISNTT2021 2021)
  • Strong resonant light emission in strained Ge microbridges
    (ISNTT2021 2021)
  • Strong room-temperature EL emission from Ge-on-Si(111) diodes with ferromagnetic Schottky-tunnel electrodes
    (ISNTT2021 2021)
  • Suppression of crack formation and propagation in strained SiGe by patterning Ge-on-Si substrates
    (21st ICMBE 2021 2021)
  • Epitaxial growth of strained Si0.2Ge0.8 on Ge microbridge
    (21st ICMBE 2021 2021)
ｍore...
Works (9)：
  • 科研費-超高移動度一軸歪みゲルマニウム・チャネルデバイスの開発
    2014 -
  • 科研費-歪みゲルマニウム二次元正孔ガスを用いた量子ドット単正孔デバイス開発
    2013 -
  • 科学研究費補助金-面方位と異方性歪みを同時制御した革新的ゲルマニウムチャネル開発
    2010 - 2010
  • 産業技術研究助成事業(若手研究グラント)-次世代半導体Ge チャネルを利用した超低消費電力スピントランジスタの開発
    2009 - 2010
  • 研究助成-Si/Geへテロ構造の結晶歪み制御と高速デバイス応用
    2009 - 2009
ｍore...
Education (3)：
  • - 2005 The University of Tokyo
  • - 2002 The University of Tokyo
  • - 2000 The University of Tokyo The Faculty of Engineering Department of Applied Physics
Professional career (1)：
  • PhD (The University of Tokyo)
Work history (6)：
  • 2016/04 - 現在 Tokyo City University Faculty of Science and Engineering Professor
  • 2012/04 - 2016/03 Tokyo City University Faculty of Engineering Associate Professor
  • 2011/04 - 2012/03 Technische Universität München Walter Schottky Institute Guest Researcher
  • 2009/04 - 2012/03 Tokyo City University Faculty of Engineering Lecturer
  • 2008/04 - 2009/03 Musashi Institute of Technology Faculty of Engineering Lecturer
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Committee career (2)：
  • 2008 - 応用物理学会 委員
  • 2007 - Japan Society of Applied Physics Annual Meating Program Committee
Awards (3)：
  • 2011/03 - Young Scientist Award Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
  • 2010 - Paper Award
  • 2009 - JJAP Young Scientist Award Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
Association Membership(s) (4)：
応用物理学会 シリコンテクノロジー分科会 ,  応用物理学会 結晶工学分科会 ,  日本磁気学界 ,  応用物理学会
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