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J-GLOBAL ID：201201019302117914   Update date: Feb. 01, 2024

Takeda Sakura Nishino

Takeda Sakura Nishino
Affiliation and department：
Nara Institute of Science and Technology Graduate School of Science and Technology, Division of Materials Science

About Nara Institute of Science and Technology Graduate School of Science and Technology, Division of Materials Science


Job title： Assistant Professor
Homepage URL  (1)： https://sites.google.com/site/sntprojects/
Research field  (2)： Thin-film surfaces and interfaces ,  Semiconductors, optical and atomic physics
Research keywords  (10)： Non-linear phenomena ,  Quantized Electronic States ,  Electron-phonon interaction ,  Inversion Layer ,  ARPES ,  RHEED ,  電子物性 ,  表面・界面 ,  Cathode Luminescence ,  Raman
Research theme for competitive and other funds  (8)：
  • 2022 - 2025 Electronic structures beneath IV semiconductor surfaces probed by photoelectron and luminescence spectroscopies
  • 2014 - 2019 Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices
  • 2012 - 2015 Strain and valence band structure in the subsurface region of strained semiconductors
  • 2010 - 2014 Anisotropy of subband structure of Si and Ge surface inversion layers and control of its physical properties by means of strain
  • 2008 - 2010 Measurement of change in subband in-plane effective masses of strained p-channels
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Papers (39)：
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MISC (2)：
  • Hashimura Shiori, Takeda Sakura, Daimon Hiroshi. New phase of Si(111)-Li surface and initial adsorption structure. Abstract of annual meeting of the Surface Science of Japan. 2011. 31. 0. 50-50
  • 武田さくら, 松田和久, 島和也, 安井伸太郎, 酒井智香子, 桑子敦, 大門寛. Si(111)上へのNa,Mg吸着初期過程のリアルタイムモニタリング. 日本物理学会講演概要集. 2008. 63. 2
Lectures and oral presentations  (193)：
  • Relationship between heating current and temperature of Si at 300°C to 500°C determined by thermal emission spectroscopy
    (The Physical Society of Japan, 2023 Spring Meeting, 2023)
  • Exploratory determination of band bending potentials satisfying measured subband levels in ion-implanted Si(001) p-type inversion layers
    (The Physical Society of Japan 2023 Spring Meeting 2023)
  • Flattening of the band profile of Si(111) p-type space charge layer by the standing wave formation of valence electrons
    (70th JSAP Spring Meeting 2023 2023)
  • シリコン表面直下領域の価電子状態:実測と理解、デバイス応用
    (物質科学&デバイス物理研究会 2023)
  • 実測サブバンド準位を満たすイオン打ち込みSi(001)p型反転層形状の探索的決定
    (「電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-」 (第28回研究会) EDIT28)
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Education (2)：
  • 1994 - 1999 The University of Tokyo
  • 1990 - 1994 Tokyo University of Science
Professional career (1)：
  • Ph.D in Physics (Univ. Tokyo)
Work history (1)：
  • 1999/04 - 現在 Nara Institute of Science and Technology
Committee career (12)：
  • 2018 - 現在 応用物理学会 代議員
  • 2018 - 現在 応用物理学会 薄膜表面分科会 幹事
  • 2017 - 現在 International Conference on Solid State Devices and Materials (SSDM) program committee
  • 2008 - 現在 電子デバイス界面テクノロジー研究会(旧ゲートスタック研究会) プログラム・実行委員
  • 2016 - 2018 International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) Publicity Committee
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Awards (2)：
  • 2007/09 - The Physical Society of Japan Young Scientist Award Experimental Determination of Hole Subbands in Si Inversion Layer
  • 2003/08 - Japan Society of Applied Physics Young Scientist Presentation Award Determination of in-plane dispersion of hole subbands in Si inversion layer by ARPES
Association Membership(s) (5)：
Institute of Electrical and Electronics Engineers (IEEE) ,  THE JAPANESE SOCIETY FOR SYNCHROTRON RADIATION RESEARCH ,  The Japan Society of Vacuum and Surface Science ,  THE JAPAN SOCIETY OF APPLIED PHYSICS ,  THE PHYSICAL SOCIETY OF JAPAN
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