Research theme for competitive and other funds (6)：
2020 - 2024 Realizing of long lifetime perovskite solar cells driven in air atmosphere
2016 - 2019 Development of innovative fabrication technology for silicon solar cells using a novel low-temperature doping method
2015 - 2018 Formation of polycrystalline silicon by explosive crystallization and its application to solar cells
2011 - 2012 Development of the fabrication technology of next-generation polycrystalline silicon solar cells using rapid crystallization
2009 - 2010 Formation of high-quality poly-Si films by rapid crystallization of sputtered a-Si films
2005 - 2005 高温加圧法によるシリコン結晶ウェハーの変形加工と形状制御限界の研究
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Papers (200)：
Yuli Wen, Huynh Thi Cam Tu, Keisuke Ohdaira. Hydrogenation by catalytically generated atomic hydrogen for passivating contacts in crystalline silicon solar cells. Vacuum. 2024. 229. 113593-113593
Zheng Wang, Huynh Thi Cam Tu, Keisuke Ohdaira. Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films. Japanese Journal of Applied Physics. 2024. 63. 10. 105501-105501
Munkhtuul Gantumur, Mohammad Ismail Hossain, Md. Shahiduzzaman, Asman Tamang, Junayed Hossain Rafij, Md. Shahinuzzaman, Huynh Thi Cam Tu, Masahiro Nakano, Makoto Karakawa, Keisuke Ohdaira, et al. Tungsten-Doped ZnO as an Electron Transport Layer for Perovskite Solar Cells: Enhancing Efficiency and Stability. ACS Applied Materials & Interfaces. 2024
Ryota Ohashi, Kentaro Kutsukake, Huynh Thi Cam Tu, Koichi Higashimine, Keisuke Ohdaira. High Passivation Performance of Cat-CVD i-a-Si:H Derived from Bayesian Optimization with Practical Constraints. ACS Applied Materials & Interfaces. 2024. 16. 7. 9428-9435
Deqin Wu, Huynh Thi Cam Tu, Keisuke OHDAIRA. Delay of the potential-induced degradation of n-type crystalline silicon photovoltaic modules by the prior application of reverse bias. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP06-02SP06
Y. Liu, H. T. C. Tu, N. Yamaguchi, K. Ohdaira. Silicon heterojunction solar cells with a counter-doped n-a-Si film treated by flash lamp annealing. Extended Abstract of the 2021 International Conference on Solid State Devices and Materials (SSDM 2021). 2021
J. Xu, H. T. C. Tu, A. Masuda, K. Ohdaira. Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules. Extended Abstract of the 2021 International Conference on Solid State Devices and Materials (SSDM 2021). 2021
Y. Wen, H. T. C. Tu, and K. Ohdaira. Hydrogenation on tunnel nitride passivated contacts by catalytically generated atomic hydrogen. Extended Abstract of the 2021 International Conference on Solid State Devices and Materials (SSDM 2021),. 2021
Dong Chung Nguyen, Yasuaki Ishikawa, Cong Thanh Nguyen, Keisuke Ohdaira, Atsushi Masuda, Yukiharu Uraoka. Influence of UV light on the increase of SiNx conductivity toward elucidation of potential induced degradation mechanism. Proceedings of 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). 2020. 317-320
Y. Xu, A. Masuda, K. Ohdaira. Influence of light illumination on the potential-induced degradation of n-type interdigitated back-contact crystalline Si photovoltaic modules. Extended Abstract of the 2020 International Conference on Solid State Devices and Materials (SSDM 2020). 2020
Current situation of PV in Japan
(4th Asian Nations Joint Workshop on Photovoltaics(Plaza Verde, Numazu) 2024)
Damp heat stability of Cat-CVD Si nitride films deposited at a high deposition rate
(35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Plaza Verde, Numazu) 2024)
Bayesian optimization of deposition condition of Cat-CVD n-a-Si:H film
(35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Plaza Verde, Numazu) 2024)
Silicon solar cells using n-type tin oxide as a hole selective layer
(35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Plaza Verde, Numazu) 2024)
Minority carrier lifetime in CH3NH3PbI3 perovskite films with doped amorphous Si
(35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Plaza Verde, Numazu) 2024)
2018/10 - 現在 Japan Advanced Institute of Science and Technology
2016/04 - 2018/09 Japan Advanced Institute of Science and Technology
2012/01 - 2016/03 Japan Advanced Institute of Science and Technology
2009/10 - 2013/03 Japan Science and Technology Agency
2006/04 - 2011/12 Japan Advanced Institute of Science and Technology
2005/09 - 2006/03 Japan Advanced Institute of Science and Technology
2004/04 - 2005/08 Tohoku University Institute for Materials Research
2000/04 - 2004/03 The University of Tokyo The Graduate School of Engineering Department of Applied Physics Doctoral course
1998/04 - 2000/03 The University of Tokyo The Graduate School of Engineering Department of Applied Physics Master's Course
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Awards (2)：
2017/11/17 - PVSEC-27 Technical Program Committee PVSEC-27 Best Paper Award
2007/09/04 - The Japan Society of Applied Physics 第22回(2007年春季)応用物理学会講演奨励賞
Association Membership(s) (7)：
International Conference on Hot-Wire Chemical Vapor Deposition (Cat-CVD) Process
, 薄膜材料デバイス研究会
, Active-Matrix Flatpanel Displays and Devices (AM-FPD)
, International Conference on Solid State Devices and Materials (SSDM)
, Cat-CVD研究会
, IEEE
, The Japan Society of Applied Physics
