Miyoshi Makoto

ミヨシマコト | Miyoshi Makoto

Affiliation and department：
Job title： Professor
Homepage URL (1)： http://miyoshi.web.nitech.ac.jp/index.html

Research field (4)： Electronic devices and equipment , Electric/electronic material engineering , Crystal engineering , Applied materials

Research keywords (6)：窒化物半導体 , 受光デバイス , 電子デバイス , 結晶工学 , 半導体工学 , -

Research theme for competitive and other funds (17)：

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Papers (108)：

Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi. Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate. Applied Physics Letters. 2024. 124. 18. 18210-1-18210-4
Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi. Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system. Semiconductor Science and Technology. 2024. 39. 4. 045010-1-045010-6
Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Makoto Miyoshi, Takashi Egawa. Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns. Journal of Materials Science. 2024. 59. 7. 2974-2987
Daichi Imai, Yuto Murakami, Hayata Toyoda, Kouki Noda, Kyosuke Masaki, Kazutoshi Kubo, Mayu Nomura, Takao Miyajima, Makoto Miyoshi, Tetsuya Takeuchi. Sub-bandgap optical absorption processes in 300-nm-thick Al1-xInxN alloys grown on a c-plane GaN/sapphire template. Journal of Applied Physics. 2024. 135. 3. 035703-1-035703-8
Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi. Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different-hole-concentration p-base layers. Journal of Vacuum Science & Technology B. 2023. 41. 5. 052206-1-052206-6

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MISC (29)：

滝本将也, 間瀬晃, 小嶋智輝, 江川孝志, 三好実人. 四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製. 電子情報通信学会技術研究報告. 2023
川出智之, 米谷宜展, 田中さくら, 江川孝志, 三好実人. 単結晶AlN基板上の薄層UID-GaNチャネルを備えた AlGaInN/GaN HEMTの作製と特性評価. 電子情報通信学会技術研究報告. 2023. 122. 53-56
藤澤孝博, Hu Nan, 小嶋智輝, 江川孝志, 三好実人. 光無線給電システムに向けた自立GaN基板上GaInN系受光素子の作製と特性評価. 電子情報通信学会技術研究報告. 2023. 122. 57-60
三好実人. 光無線給電の極限効率を目指すGaN系光電変換デバイス. 月刊OPTRONICS. 2023. 42. 10. 81-84
加藤一朗, 久保俊晴, 三好実人, 江川孝志. 極微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェンFETの作製と評価. 電子情報通信学会技術研究報告. 2023. 123. 20-23

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Patents (75)：

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Lectures and oral presentations (236)：

Wavelength dependence of temperature characteristics of InGaN photodetectors for optical wireless power supply
(The 6th Optical Wireless and Fiber Power Transmission Conference (OWPT 2024) 2024)
Near-UV photoelectric transducers for OWPT systems based on GaInN multiple quantum-well structures
(The 6th Optical Wireless and Fiber Power Transmission Conference (OWPT 2024) 2024)
厚いNiパターンの凝集現象を利用したサファイア基板上微細幅転写フリーグラフェンの作製
(第71回応用物理学会春季学術講演会 2024)
四元混晶n型AlGaInNエミッタとp型GaInNベースを備えたGaN系HBTの作製と特性評価
(電子情報通信学会総合大会 2024)
Fabrication of high AlN-mole-fraction Al0.7Ga0.3N channel HFETs using a single-crystal AlN substrate
(16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2024) 2024)

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Education (2)：

Professional career (1)：

Work history (4)：

2012/04 - 現在 Nagoya Institute of Technology Graduate School of Engineering, Research Center for Nano-Device and next generation material Professor
2020/04/01 - 2021/03/31 Hokkaido University Research Center For Integrated Quantum Electronics Guest Professor
2011/03/01 - 2012/01/31 Shin-Etsu Handotai Co., Ltd. Isobe R&D Center Chief Researcher
1992/04/01 - 2011/02/28 NGK Insulators, Ltd. Corporate R&D Chief Researcher

Awards (12)：

2024/01 - 電子情報通信学会エレクトロニクスソサエティ電子デバイス (ED) 研究専門委員会電子情報通信学会電子デバイス (ED) 研究専門委員会論文発表奨励賞四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製
2023/11 - 14th International Conference on Nitride Semiconductors, ICNS-14 Outstanding Poster Award High-efficiency GaInN-based photovoltaic cells on free-standing GaN substrate for optical wireless power transmission system
2023/03 - IOP publishing IOP Outstanding Reviewer Awards 2022
2022/10 - International Workshop on Nitride Semiconductors, IWN 2022 The Best Poster Presentation AlGaInN/GaN HEMTs on single-crystal AlN substrate
2022/06/09 - 名古屋工業大学名古屋工業大学教員評価優秀賞

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Association Membership(s) (1)：

応用物理学会

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