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J-GLOBAL ID：201601004701537024   Update date: Oct. 02, 2024

Muneta Iriya

ムネタ イリヤ | Muneta Iriya
Affiliation and department：
Tokyo Institute of Technology School of Engineering

About Tokyo Institute of Technology School of Engineering


Job title： Assistant Professor
Research field  (3)： Electric/electronic material engineering ,  Magnetism, superconductivity, and strongly correlated systems ,  Applied materials
Research keywords  (2)： Spintronics ,  two-dimensional layered materials
Research theme for competitive and other funds  (8)：
  • 2024 - 2027 Electrical control of 4d-orbital edge ferromagnetism in two-dimensional semiconductor MoS2
  • 2024 - 2025 Electrical control of ferromagnetism with narrow gap Hubbard band
  • 2021 - 2024 Ferromagnetism and its application of transition-metal chalcogenide 2D-layered polycrystal
  • 2020 - 2022 二次元層状物質遷移金属カルコゲナイドの磁化特性と電気伝導特性
  • 2018 - 2021 Self-Heating-Effect-Free p/n-Stacked-NW/Bulk-FinFETs and 6T-SRAM
Show all
Papers (57)：
  • Shinya Imai, Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Hitoshi Wakabayashi. Reduction of contact resistance to PVD-MoS film using aluminum-scandium alloy (AISc) edge contact. IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. 2024
  • Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer. Japanese Journal of Applied Physics. 2023. 62. SC. SC1015-SC1015
  • Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact. IEEE Journal of the Electron Devices Society. 2023. 11. 15-21
  • Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure. Scientific Reports. 2022. 12. 15387
  • Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. 7
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MISC (3)：
  • 今井慎也, 梶川亮介, 川那子高暢, 宗田伊理也, 角嶋邦之, 辰巳哲也, 冨谷茂隆, 筒井一生, 若林整. Current-Voltage Characteristics of Edge Metal Contact for MoS2 Film Formed by Sputtering. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • 今井慎也, 小野凌, 宗田伊理也, 角嶋邦之, 辰巳哲也, 冨谷茂隆, 筒井一生, 若林整. Research on sputter deposition rate dependence of MoS2 film quality. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
  • Watanabe, Masahiro, Shigyo, Naoyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Kakushima, Kuniyuki, Satoh, Katsumi, Matsudai, Tomoko, Saraya, Takuya, Takakura, Toshihiro, Itou, Kazuo, et al. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). 2019. 311-314
Lectures and oral presentations  (51)：
  • アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用
    (第83回応用物理学会秋季学術講演会 2022)
  • アニール処理によるWS2-Niエッジコンタクト特性の向上
    (第83回応用物理学会秋季学術講演会 2022)
  • 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善
    (第83回応用物理学会秋季学術講演会 2022)
  • MoS2膜質のスパッタ成膜レート依存性調査
    (第83回応用物理学会秋季学術講演会 2022)
  • 微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上
    (第83回応用物理学会秋季学術講演会 2022)
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Education (3)：
  • 2011 - 2014 The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems
  • 2009 - 2011 The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems
  • 2007 - 2009 The University of Tokyo The Faculty of Engineering Department of Electronic Engineering
Professional career (1)：
  • 博士(工学) (東京大学)
Awards (1)：
  • 2018/03 - The Japan Society of Applied Physics, Silicon Technology Division Reserach Promotion Award
Association Membership(s) (3)：
Institute of Electrical and Electronics Engineers (IEEE) ,  The Japan Society of Applied Physics ,  The Fullerenes, Nanotubes, Graphene Research Society (FNTG)
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