Shima Kohei

シマコウヘイ | Shima Kohei

Affiliation and department：
Job title： Associate professor
Homepage URL (1)： https://www.scopus.com/authid/detail.uri?authorId=55365156000

Research field (4)： Applied physics - general , Crystal engineering , Chemical reaction and process system engineering , Material fabrication and microstructure control

Research keywords (20)： Boron nitride , 2D materials , Deep-ultraviolet (DUV) light emitter , Vapor-phase epitaxy , Ammonothermal method , Spatio-time-resolved cathodoluminescence , Vacancy-type defects , Ion implantation , III-N semiconductor , Polariton laser , Exciton , Wide-bandgap semiconductor , Opto-electronics , Chemical vapor infiltration , SiC/SiC Ceramic matrix composites (CMCs) , Fiber Reinforced Ceramic , Atomic layer deposition , Chemical vapor deposition , Metallization , ULSI Cu interconnects

Research theme for competitive and other funds (13)：

2023 - 2025 グラファイト型層状窒化ホウ素の気相合成と光電子素子材料としての物性解明
2022 - 2025 六方晶および閃亜鉛鉱構造窒化ホウ素の高温気相エピタキシャル成長と導電性制御
2021 - 2024 ZnO微小共振器への電流注入による室温ポラリトンレーザ発振
2022 - 2023 ZnO微小共振器による室温ポラリトンレーザ発振の実証
2020 - 2022 六方晶窒化ボロン半導体の直接遷移型化と深紫外励起子発光ダイナミクスの研究

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Papers (49)：

秩父重英, 奥野浩司, 大矢昌輝, 齋藤義樹, 石黒永孝, 竹内哲也, 嶋紘平. 275 nm帯AlGaN LEDの初期劣化機構. 応用電子物性分科会誌. 2024. 30. 2. 57-67
S. F. Chichibu, K. Shima, A. Uedono, S. Ishibashi, H. Iguchi, T. Narita, K. Kataoka, R. Tanaka, S. Takashima, K. Ueno, et al. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 2024. 135. 185701-1-20
K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, M. Saito, D. Tomida, A. Uedono, S. Ishibashi, T. Ishiguro, S. F. Chichibu. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method. Applied Physics Letters. 2024. 124. 18. 181103-1-6
A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, et al. Vacancy-type defects and their trapping/detrapping of charge carriers in ion-implanted GaN studied by positron annihilation. Physica Status Solidi B. 2024. 261. 2400060-1-10
K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu. Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports. 2024. 14. 169-1-8

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Patents (6)：

Method of producing a silicon compound material and apparatus for producing a silicon compound material
Heat-resistant composite material production method and production device
Heat-resistant composite material production method and production device
耐熱複合材料の製造方法及び製造装置
耐熱複合材料の製造方法及び製造装置

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Books (1)：

大口径・高純度GaN単結晶基板の量産法と結晶評価
S&T出版「次世代パワーエレクトロニクスの課題と評価技術」 2022 ISBN:9784907002930

Lectures and oral presentations (248)：

Power degradation mechanism of UV-C LEDs under current stress
(The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2025 2025)
Development for long lifetime and high efficiency DUV LEDs
(The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2025 2025)
ダイヤモンドとウルツ構造Al, Ga酸窒化物との界面バンド接合
(第38回ダイヤモンドシンポジウム 2024)
Minority carrier capture coefficients of major midgap recombination centers in the state-of-the-art GaN substrates, epilayers, and Mg-implanted layers
(International Workshop on Nitride Semiconductors 2024 (IWN2024) 2024)
Room-temperature photoluminescence lifetimes of Mg-doped p-type GaN layers grown by halide vapor phase epitaxy
(International Workshop on Nitride Semiconductors 2024 (IWN2024) 2024)

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Works (1)：

Microchannels: High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition
Kohei Shima, Yuichi Funato, Hidetoshi Sugiura, Noboru Sato, Yasuyuki Fukushima, Takeshi Momose, Yukihiro Shimogaki 2016 - 現在

Education (3)：

- 2017 The University of Tokyo Graduate School, Division of Engineering Department of Materials Engineering
- 2013 The University of Tokyo Graduate School, Division of Engineering Department of Materials Engineering
- 2011 The University of Tokyo Faculty of Engineering Department of Materials Engineering

Professional career (3)：

PhD (Engineering) (The University of Tokyo)
Master (The University of Tokyo)
Bachelor (The University of Tokyo)

Work history (9)：

2023/04 - 現在 Tohoku University Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Associate professor
2018/08 - 2023/03 Tohoku University Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Research associate
2017/04 - 2018/07 Tohoku University Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Posdoc
2013/04 - 2017/03 PhD course, Department of Materials Engineering, School of Engineering, The University of Tokyo
2012/10 - 2017/03 The University of Tokyo, The Materials Education Program for the Future Leaders in Research, Industry, and Technology (MERIT), The Japan Society for the Promotion of Science through the Program for Leading Graduate Schools

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Awards (8)：

2024/05 - 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第16回(令和6年度)ナノ構造エピタキシャル成長講演会研究奨励賞 Mgイオン注入GaNにおける空孔型欠陥のルミネッセンス評価
2023/03 - トーキン科学技術振興財団第33回(令和4年度)トーキン財団奨励賞室温で共振器ポラリトンを呈するチップサイズ酸化亜鉛微小共振器の実現
2021/07 - The Japan Society of Applied Physics 43rd JSAP Outstanding Paper Award 2021, JSAP Paper Award Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
2019/07 - The 13th International Conference on Nitride Semiconductors (ICNS-13) Best poster Award Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN
2019/06 - 19th International Workshop on Junction Technology (IWJT2019) Best Paper Award "Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes"

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Association Membership(s) (5)：

Research committee on transparent oxide materials for optics and electronics , The Japanese Association for Crystal Growth , 化学工学会反応工学部会 CVD反応分科会 , The Japan Society of Applied Physics , The Society of Chemical Engineers, Japan

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