Rchr
J-GLOBAL ID:201801001581290157   Update date: Sep. 03, 2024

Sato Shingo

サトウ シンゴ | Sato Shingo
Affiliation and department:
Job title: Associate Professor
Research field  (1): Electronic devices and equipment
Research theme for competitive and other funds  (3):
  • 2021 - 2024 積層半導体基板におけるキャリア輸送特性の高精度抽出法に関する研究
  • 2019 - 2020 積層半導体基板向け電気物性値抽出手法の開発
  • 2018 - 2020 半導体製造における配線劣化現象解明の研究
Papers (49):
  • Shingo Sato, Yifan Yuan. Detailed analysis of the capacitance characteristic measured using the pseudo-metal-oxide-semiconductor method. Solid-State Electronics. 2024. 217. 108950-108950
  • S. Kanai, T. Nishikawa, S. Sato. The spds*p*+Δ tight binding model for 3C-SiC. Japanese Journal of Applied Physics. 2024. 63. 4. 040907-040907
  • Y. Yuan, S. Sato. Detailed analysis of electrical components on a layered wafer via the AC pseudo-MOS method. Solid State Electronics. 2023. Volume 210, December 2023, 108811
  • Y. Omura, T. Yamamura, S. Sato. Impact of Band Structure on Phonon-Limited Electron Mobility Behavior of Germanium-on-Insulator Layer with (001) and (111) Surfaces. Jordan Journal of Electrical Engineering,. 2021. vol. 7, no. 3, p.203-230,
  • MORI, Daigo, NAKATA, Iori, MATSUDA, Masayoshi, SATO, Shingo. Detailing Influence of Contact Condition and Island Edge on Dual-Configuration Kelvin Pseudo-MOSFET Method. IEEE Transactions on Electron Devices. 2021. vol. 68, No. 6, pp.2906-2911
more...
MISC (1):
  • KAWAMOTO Akihiro, SATO Shingo, OMURA Yasuhisa. Optimization of Lateral Diffusion of Source and Drain for Sub-100-nm Channel Silicon-on-insulator MOSFETs. Technical report of IEICE. VLD. 2002. 102. 344. 13-18
Lectures and oral presentations  (68):
  • Influence of Electrode Materials and their Deposition Method on Switching Characteristics of ReRAM Devices
    (2023)
  • The spds*p*+Δ tight binding model for 3C-SiC
    (2023)
  • Detailed analysis of electrical components on a layered wafer with an ac pseudo-MOS method,
    (2023)
  • Detailed analysis of electrical components on SOI wafer with an ac pseudo-MOS method,
    (2022)
  • The impact of Carrier Lifetime on the Electrical Characteristics of Z2-FET
    (2022)
more...
Professional career (1):
  • 博士(工学)
Association Membership(s) (2):
IEEE ,  応用物理学会
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