Rchr
J-GLOBAL ID：201801002045422136
Update date: Jun. 13, 2024
Michihiro Yamada
Michihiro Yamada
Affiliation and department：
Job title：
Associate Professor
Homepage URL (1)：
https://csrn.es.osaka-u.ac.jp/yamada_group/
Research field (2)：
Crystal engineering
, Applied materials
Research theme for competitive and other funds (5)：
- 2021 - 2023 半導体スピン素子における低抵抗バンドマッチスピン注入技術の創出
- 2020 - 2023 革新的スピン注入技術を用いた縦型半導体スピン素子の創成
- 2018 - 2021 歪みSiGeスピンMOSFETの創製
- 2018 - 2020 ホイスラー型新機能スピントロニクス材料の薄膜実証とその応用
- 2017 - 2019 歪みSiGeチャネルにおける室温スピン信号の増大
Papers (51)：
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R. Kanesawa, S. Kikuoka, Y. Shibahara, Y. Wagatsuma, M. Yamada, K. Hamaya, K. Sawano. Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method. Materials Science in Semiconductor Processing. 2024. 177. 108300-108300
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Shuya Kikuoka, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano. Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes. Materials Science in Semiconductor Processing. 2024. 176. 108299-108299
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Michihiro Yamada, Shota Suzuki, Ai I. Osaka, Kazuaki Sumi, Takahiro Inoue, Azusa N. Hattori, Shinya Yamada, Kentarou Sawano, Marwan Dhamrin, Kohei Hamaya. Al-Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys. Materials Science in Semiconductor Processing. 2024. 174
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Atsuya Yamada, Michihiro Yamada, Shuhei Kusumoto, Julio A. do Nascimento, Connor Murrill, Shinya Yamada, Kentarou Sawano, Vlado K. Lazarov, Kohei Hamaya. Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si. Materials Science in Semiconductor Processing. 2024. 173. 108140-108140
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Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya. Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi. Materials Science in Semiconductor Processing. 2024
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MISC (25)：
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杉浦由和, 菊岡柊也, 我妻勇哉, 金澤玲奈, 星裕介, 山田道洋, 浜屋宏平, 浜屋宏平, 澤野憲太郎. Influences of injection currents on room temperature EL emission peaks from Ge-on-Si (111) LEDs. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
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加藤昌稔, 山田晋也, 山田晋也, 市川修平, 小林周平, 山田道洋, 山田道洋, 内藤貴大, 舘林潤, 藤原康文, et al. Spin transport in GaN using ferromagnetic Heusler alloy/n+-GaN Schottky tunnel contacts. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
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山田敦也, 山田道洋, 山田道洋, 山田晋也, 山田晋也, 澤野憲太郎, 浜屋宏平, 浜屋宏平. Growth of high quality Ge layers on Co2FeSi and enhancement in room-temperature magnetoresistance ratios for Ge-based vertical spin devices. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
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杉浦由和, 我妻勇哉, 山田航大, 星裕介, 山田道洋, 浜屋宏平, 澤野憲太郎. Room temperature EL from strained Ge-on-Si(111) diode structure. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
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杉浦由和, 佐々木雅至, 我妻勇哉, 山田航大, 星裕介, 山田道洋, 浜屋宏平, 澤野憲太郎. Enhancement of RT EL emission intensity in Ge-on-Si (111) diodes by annealing. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
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Lectures and oral presentations (10)：
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縦型半導体スピン素子を目指したCo2FeSi上の高品質Ge成長と室温磁気抵抗比の増大
(第69回応用物理学会春季学術講演会 2022)
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強磁性ホイスラー合/n+-GaNショットキートンネル接合電極を用いたGaNチャネル層中のスピン伝導検出
(第69回応用物理学会春季学術講演会 2022)
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Long-distance spin-drift transport in strained SiGe
(2022)
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Two-terminal magnetoresistance ratio in Co-based Heusler alloy/germanium lateral spin-valve devices
(2022)
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縦型半導体スピン素子のための単結晶Co2FeSi上Ge薄膜の高品質化
(第26回半導体スピン工学の基礎と応用 2021)
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Professional career (1)：
Work history (6)：
Awards (4)：
- 2018/09 - The Japan Society and Applied Physics JSAP Paper Award
- 2018/03 - Silicon Technology Division, The Japan Society and Applied Physics Paper Award, Silicon Technology Division, The Japan Society and Applied Physics
- 2014/11 - Division of Crystal Science and Technology, The Japan Society and Applied Physics Young Scientist Presentation Award
- 2010/03 - Faculty of Science and Technology, Keio University Fujiwara Prize
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