Rchr
J-GLOBAL ID:201801005097479380   Update date: Apr. 15, 2024

UMEZAWA Hitoshi

UMEZAWA Hitoshi
Affiliation and department:
Homepage URL  (1): http://www.researcherid.com/rid/C-9629-2011
Research field  (1): Electronic devices and equipment
Research theme for competitive and other funds  (7):
  • 2014 - 2019 Diamond Quantum Sensing
  • 2013 - 2016 Low dislocation diamond wafer for power device
  • 2012 - 2016 Researches of high temperature power switching devices on high quality semiconductor diamond
  • 2005 - 2008 半導体ダイヤモンドを用いた超高出力RF増幅およびスウィッチングデバイスの開発
  • 2003 - 2005 ダイヤモンド薄膜表面の導電性制御によるハイパワー高周波トランジスタの開発
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Papers (194):
  • Takehiro Shimaoka, Junichi H. Kaneko, Yasunobu Arikawa, Mitsutaka Isobe,Masakatsu Tsubota, Kengo Oda, Mitsuo Nakai, Hiroyuki Shiraga,Hiroshi Azechi, Akiyoshi Chayahara, Hitoshi Umezawa, Shinichi Shikata. Measurement of Neutrons Produced by Inertial Fusion with a Diamond Radiation Detector. Sensors and Materials. 2024. 36. 1. 217-217
  • Phongsaphak Sittimart, Shinya Ohmagari, Hitoshi Umezawa, Hiromitsu Kato, Kotaro Ishiji, Tsuyoshi Yoshitake. Thermally Stable and Radiation-Proof Visible-Light Photodetectors Made from N-Doped Diamond. Advanced Optical Materials. 2023. 11. 12
  • Takashi Matsumae, Hitoshi Umezawa, Yuichi Kurashima, Hideki Takagi. (Invited, Digital Presentation) Low-Temperature Direct Bonding of Wide-Bandgap Semiconductor Substrates. ECS Transactions. 2023
  • Tadashi Masumura, Hitoshi Umezawa, Takahiro Yamaguchi, Yusei Deguchi, Hiroyuki Kawashima, Toshiharu Makino, Naohisa Hoshikawa, Hitoshi Koizumi, Junichi H. Kaneko. Irradiation effects of X-rays up to 3 MGy on hydrogen-terminated diamond MOSFETs. Diamond and Related Materials. 2023. 135. 109825-109825
  • Takehiro Shimaoka, Hitoshi Umezawa, Gwenole Jacopin, Satoshi Koizumi, Takeshi Fujiwara, Julien Pernot. Temperature dependence of betavoltaic cell performance of diamond pn junction diode. IEEE Electron Device Letters. 2023. 1-1
more...
MISC (159):
  • 松前貴司, 倉島優一, 高木秀樹, 梅沢仁, 渡邊幸志, 伊藤利充, 日暮栄治. For efficient heat dissipation from ultra-widegap Ga2O3 substrate by direct bonding with diamond substrate. エレクトロニクス実装学会講演大会講演論文集(CD-ROM). 2022. 36th
  • 松前貴司, 倉島優一, 高木秀樹, 梅沢仁, 日暮栄治. Direct bonding formation between semiconductor device and diamond substrate via reaction of surface functional groups. 電子情報通信学会大会講演論文集(CD-ROM). 2022. 2022
  • 上東洋太, 大曲新矢, 梅沢仁, 山田英明, LIANG Jianbo, 重川直輝. Fabrication and electrical characterization of n+-Si/p-diamond heterojunction diodes. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
  • 上東洋太, 大曲新矢, 梅沢仁, 山田英明, LIANG Jianbo, 重川直輝. Evaluation of thermal stability of Si/diamond heterojunction diodes. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
  • 上東洋太, 大曲新矢, 梅沢仁, 山田英明, LIANG Jianbo, 重川直輝. Fabrication of diamond/Si heterojunction diodes by surface activated bonding. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
more...
Books (1):
  • Power electronics device applications of diamond semiconductors
    Woodhead Publishing 2018 ISBN:9780081021835
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