Imanishi Masayuki

イマニシマサユキ | Imanishi Masayuki

Affiliation and department：

Research field (1)： Electric/electronic material engineering

Research keywords (7)：酸化ガリウム , パワーデバイス , ワイドギャップ半導体 , 結晶成長 , point seed , Na-Flux method , GaN

Research theme for competitive and other funds (5)：

2021 - 2023 Growth technique of high quality gallium oxide crystal by toxic gas-free OVPE method
2020 - 2023 Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium source
2018 - 2020 Enlargement of defect-free GaN crystals by the Na-flux method
2017 - マイクロチャネルエピタキシーを用いた高品質・大口径GaN基板の作製
2014 - 2016 Naフラックス法を用いた低反り・低欠陥窒化ガリウムウエハ作製技術の研究開発

Papers (101)：

Takahiro Kawamura, Ryogo Nishiyama, Toru Akiyama, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Masashi Yoshimura. Thermal conductivity of GaN with a vacancy and an oxygen point defect. Journal of Crystal Growth. 2025. 649. 127948-1-127948-6
Masayuki Imanishi, Shigeyoshi Usami, Kosuke Murakami, Kanako Okumura, Kosuke Nakamura, Keisuke Kakinouchi, Yohei Otoki, Tomio Yamashita, Naohiro Tsurumi, Satoshi Tamura, et al. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches. physica status solidi (RRL) - Rapid Research Letters. 2024. 2400106-1-2400106-10
T. Hamachi, T. Tohei, Y. Hayashi, S. Usami, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction. Journal of Applied Physics. 2024. 135. 22
Uta MICHIBATA, Mihoko MARUYAMA, Yutaro TANAKA, Masashi YOSHIMURA, Hiroshi YOSHIKAWA, Kazufumi TAKANO, Yoshihiro FURUKAWA, Koichi MOMMA, Rie TAJIRI, Kazumi TAGUCHI, et al. Calcium phosphate controls nucleation and growth of calcium oxalate crystal phases in kidney stones. Biomedical Research (Tokyo). 2024. 45. 3. 103-113
Uta Michibata, Mihoko Maruyama, Yutaro Tanaka, Masashi Yoshimura, Hiroshi Y. Yoshikawa, Kazufumi Takano, Yoshihiro Furukawa, Koichi Momma, Rie Tajiri, Kazumi Taguchi, et al. The impact of crystal phase transition on the hardness and structure of kidney stones. Urolithiasis. 2024. 52. 1

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MISC (29)：

道端詩, 丸山美帆子, 丸山美帆子, 田中勇太朗, 田中勇太朗, 吉村政志, 西村良浩, 植村真結, 塚本勝男, 塚本勝男, et al. Observation of surface dissolution of Calcium Oxalate Dihydrate crystals through using human kidney stones. 結晶成長国内会議予稿集(CD-ROM). 2023. 52nd
鷲田将吾, TANDRYO Ricksen, 中島達彦, 村上航介, 今西正幸, 宇佐美茂佳, 丸山美帆子, 吉村政志, 森勇介. Dependence of crystallinity of GaN crystals grown by the Na flux point seed technique on the off-angle of the seed substrate. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
Yamauchi Hyoga, Tandryo Ricksen, Yamada Takumi, Murakami Kosuke, Usami Shigeyoshi, Imanishi Masayuki, Maruyama Mihoko, Maruyama Mihoko, Maruyama Mihoko, Yoshimura Masashi, et al. Suppression of newly generated threading dislocations at the regrowth interface of a GaN crystal by growth rate control in the Na-flux method. Japanese Journal of Applied Physics (Web). 2022. 61. 5
Junichi Takino, Tomoaki Sumi, Shigeyoshi Usami, Masayuki Imanishi, Yoshio Okayama, Yusuke Mori. Development of Ultra-Low Resistance and Low Dislocation Density GaN Substrates and their Device Applications. 2021. 48. 3. 3-02
Masayuki Imanishi, Kosuke Murakami, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura, Yusuke Mori. Fabrication of High-Quality and Large-Diameter GaN Wafer by the Na-Flux Method with a Point Seed Technique. 2021. 48. 3. 3-01

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Patents (27)：

III族窒化物結晶の製造方法
III族窒化物結晶、III族窒化物基板、及びIII族窒化物結晶の製造方法
III族窒化物結晶、III族窒化物基板、及びIII族窒化物結晶の製造方法
III族窒化物結晶の製造方法
METHOD FOR MANUFACTURING A GROUP III-NITRIDE CRYSTAL COMPRISING SUPPLYING A GROUP III-ELEMENT OXIDE GAS AND A NITROGEN ELEMENT-CONTAINING GAS AT A SUPERSATURATION RATIO OF GREATER THAN 1 AND EQUAL TO OR LESS THAN 5

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Books (1)：

次世代パワー半導体の開発・評価と実用化
エヌ・ティー・エス 2022 ISBN:4860437675

Lectures and oral presentations (257)：

Reduction of polycrystalline GaN crystals derived from melt back of seed substrate in the Na-flux method
(12th International Workshop on Nitride Semiconductors (IWN2024) 2024)
In situ nanobeam X-ray diffraction of vertical power devices grown on OVPE-GaN substrates
(12th International Workshop on Nitride Semiconductors (IWN2024) 2024)
Thermodynamic and experimental studies of OVPE-GaN growth under the low nucleation frequency conditions
(12th International Workshop on Nitride Semiconductors (IWN2024) 2024)
Effects of morphology during coalescence of GaN crystals on dislocation propagation in the Na-flux point seed technique
(12th International Workshop on Nitride Semiconductors (IWN2024) 2024)
Repeated Homoepitaxial Growth of GaN crystals by Na-flux Method on a Native Seed
(12th International Workshop on Nitride Semiconductors (IWN2024) 2024)

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Education (3)：

2013 - 2016 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering
2012 - 2013 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering
- 2012 Osaka University School of Engineering

Professional career (1)：

博士(工学) (大阪大学)

Work history (5)：

2020/10 - 現在 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering
2018/04 - 現在 Osaka University Graduate School of Engineering Center for Atomic and Molecular Technologies Assistant Professor
2018 - 2020/09 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Infocommunications Engineering Assistant Professor
2016/09 - 2018/03 Osaka University Graduate School of Engineering Center for Atomic and Molecular Technologies
2016/04 - 2016/08 Osaka University Graduate School of Engineering

Awards (11)：

2024/05 - * Terahertz Time-Domain Ellipsometry with Highly Improved Precision and Its Application on Wide-Bandgap Semiconductor GaN
2022/11 - 日本結晶成長学会第51回結晶成長国内会議講演奨励賞 OVPE法によるβ相酸化ガリウム結晶のエピタキシャル成長
2022/06 - フジサンケイビジネスアイ第35回独創性を拓く先端技術大賞社会人部門特別賞 Naフラックス法とOVPE法を組み合わせた高品質・大型GaN結晶成長技術 ~脱炭素社会化に貢献するGaNデバイスの普及を目指して~
2020/09 - 応用物理学会論文賞 Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method
2020/07 - 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第13回ナノ構造・エピタキシャル成長講演会研究奨励賞 Naフラックスポイントシード法による低転位・大口径GaN結晶成長

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Association Membership(s) (3)：

日本結晶成長学会 , 応用物理学会結晶工学分科会 , 応用物理学会

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