Okada Narihito

オカダナリヒト | Okada Narihito

Affiliation and department：

Research field (2)： Crystal engineering , Electric/electronic material engineering

Research keywords (3)： HVPE , MOVPE , Nitride Semiconductor

Research theme for competitive and other funds (6)：

2019 - 2021 Operation of V-pit formation originated from dislocations and clarification of dislocation invalidation mechanism in GaN-based LEDs
2016 - 2019 High performance and controlling optical polarization for unpolar optical devices using hetero middle layer
2013 - 2016 Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
2012 - 2014 Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template
2008 - 2010 Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes

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Papers (131)：

Kosuke Inai, Ryota Oshimura, Kunio Himeno, Megumi Fujii, Yuta Onishi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low-Dislocation Sputtered AlN Templates. physica status solidi (b). 2024
Hideaki Murotani, Kunio Himeno, Hayate Ohkawara, Kaichi Tani, Satoshi Kurai, Narihito Okada, Noritoshi Maeda, Muhammad Ajmal Khan, Hideki Hirayama, Yoichi Yamada. Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN-Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm. physica status solidi (b). 2024
Hideaki Murotani, Kosuke Inai, Kunio Himeno, Kaichi Tani, Hiromasa Hayashi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Temperature- and Excitation Power Density-Resolved Photoluminescence of AlGaN-Based Multiple Quantum Wells Emitting in the Spectral Range of 220-260 nm. physica status solidi (b). 2024
Minagi Miyamoto, Wataru Matsumura, Ryo Okuno, Syunsuke Matsuda, Koki Hanasaku, Taketo Kowaki, Daisuke Inahara, Satoshi Kurai, Narihito Okada, Yoichi Yamada. Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates. Japanese Journal of Applied Physics. 2023. 62. SN. SN1016-SN1016
Taketo Kowaki, Wataru Matsumura, Koki Hanasaku, Ryo Okuno, Daisuke Inahara, Shunsuke Matsuda, Satoshi Kurai, Yongzhao Yao, Yukari Ishikawa, Narihito Okada, et al. Si Doping Effects in AlGaN Channel Layer on Performance of N-polar AlGaN/AlN FETs. physica status solidi (a). 2023

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MISC (25)：

中生拓希, 姫野邦夫, 武田椋平, 室谷英彰, 倉井聡, 岡田成仁, KHAN M. Ajmal, 前田哲利, 定昌史, 平山秀樹, et al. Analysis of luminescence efficiency curve at high excitation condition in deep UV AlGaN quantum well structure. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
押村遼太, 稲井滉介, 草場崇史, 藤井厚志, 倉井聡, 岡田成仁, 室谷英彰, 上杉謙次郎, 三宅秀人, 山田陽一. Internal quantum efficiency of AlGaN quantum wells on various AlN templates. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
中津留圭悟, 南里翼, 倉井聡, 岡田成仁, 只友一行, 室谷英彰, 矢野良樹, 小関修一, 松本功, 山田陽一. Excitation wavelength dependence of internal quantum efficiency in green InGaN-based quantum well structures. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
姫野邦夫, 武田椋平, 中生拓希, 室谷英彰, 倉井聡, 岡田成仁, KHAN M. Ajmal, 前田哲利, 定昌史, 平山秀樹, et al. Recombination dynamics of AlGaN-based UV-B quantum well structures using exciton rate equation model. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
中津留圭悟, 橋口勇樹, 室谷英彰, 倉井聡, 岡田成仁, 只友一行, 矢野良樹, 小関修一, 松本功, 山田陽一. Correlation between emission efficiency curve analysis and radiative and non-radiative recombination dynamics in green InGaN quantum well structure. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2020. 2020 (Web)

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Lectures and oral presentations (1)：

Transistor
(2022)

Education (1)：

- 2008 Meijo University Science and Engineering

Professional career (1)：

工学 (名城大学)

Work history (3)：

2018/04 - 現在 Yamaguchi univerisity Graduate School of Sciences and Technology for Innovation Associate Professor
2010/05 - 2016/04 YAMAGUCHI UNIVERSITY Graduate School of Sciences and Technology for Innovation Assistant Professor
2010/02/24 - 2010/05/17 YAMAGUCHI UNIVERSITY Graduate School of Science and Engineering(Engineering)

Committee career (18)：

2020 - 現在 ISPlasma Paper Committee Member
2016 - 現在 LEDIA 実行委員
2016 - 現在日本結晶成長学会ナノ構造・エピタキシャル成長分科会幹事
2009 - 現在応用物理学会中国四国支部研究会企画委員
- 現在 Local Executive Committee Member

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Awards (7)：

2021 - 応用物理学会 JJAP/APEX Reviewer Aword
2018/03 - 応用物理学会 2018年度支部学術講演会発表奨励賞選択横方向成長による高品質 AlN のストライプ方位依存性
2018 - 応用物理学会第17回(2018年度)APEX/JJAP編集貢献賞
2017/03 - OPIC The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA`17) Young Researcher’s Paper Award Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
2012/05 - 応用物理学会第32回(2012年春季)応用物理学会「講演奨励賞」ハイドライド気相成長による非極性面GaNの低転位化

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