Tanaka Hajime

タナカハジメ | Tanaka Hajime

Affiliation and department：

Research field (1)： Electric/electronic material engineering

Research keywords (3)： simulation , carrier transport , semiconductor

Research theme for competitive and other funds (8)：

2024 - 2029 SiC MOS反転層における電子輸送機構の原子論と量子論に基づく解明
2021 - 2026 Materials Science and Device Physics in SiC toward Robust Electronics
2021 - 2024 ワイドギャップ半導体における衝突イオン化現象の理論研究
2021 - 2022 ワイドギャップ半導体での高電界キャリア輸送に関する理論解析
2020 - 2021 低損失パワーデバイスに向けたSiC MOS界面における電子輸送の理論研究

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Papers (39)：

Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori. Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC. Materials Science in Semiconductor Processing. 2024. 173. 108126-108126
Seyed Ali Mojtahedzadeh, Hajime Tanaka, Nobuya Mori. Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure. Japanese Journal of Applied Physics. 2024. 63. 3. 031004-031004
Masahiro Hara, Takeaki Kitawaki, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto. Tunneling current through non-alloyed metal/heavily-doped SiC interfaces. Materials Science in Semiconductor Processing. 2024. 171. 108023-108023
Yutoku Murakami, Sachika Nagamizo, Hajime Tanaka, Nobuya Mori. Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP46-03SP46
Ryoya Ishikawa, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto. Origin of hole mobility anisotropy in 4H-SiC. Journal of Applied Physics. 2024. 135. 7. 075704

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MISC (6)：

岡田丈, 田中一, 森伸也. 半導体ナノシートにおける表面ラフネス散乱の量子論に基づく数値解析. 電子情報通信学会技術研究報告. 2023. 123. 250. 10-15
田中一. SISPAD 2023 レビュー. 電子情報通信学会技術研究報告. 2023. 123. 250. 1-6
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers. IEICE technical report. 2018. 118. 291. 35-40
FUJIHARA Hiroaki, MORIOKA Naoya, TANAKA Hajime, SUDA Jun, KIMOTO Tsunenobu. Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs. IEICE technical report. 2014. 114. 360. 7-11
TANAKA Hajime, MORI Seigo, MORIOKA Naoya, SUDA Jun, KIMOTO Tsunenobu. Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires. IEICE technical report. 2014. 114. 359. 1-6

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Lectures and oral presentations (115)：

SiC MOS界面におけるドナー不純物による電子束縛状態の解析
(先進パワー半導体分科会第10回講演会 2023)
Carrier Transport Simulations in Twisted Bilayer and Turbostratic Multilayer Graphene Systems
(The 36th International Microprocesses and Nanotechnology Conference 2023)
SISPAD 2023 レビュー
(電子情報通信学会シリコン材料・デバイス研究会 2023)
半導体ナノシートにおける表面ラフネス散乱の量子論に基づく数値解析
(シリコンテクノロジー分科会第246回研究集会 2023)
Semiconductor device simulation from first principles
(The 24th Asian Workshop on First-Principles Electronic Structure 2023)

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Education (2)：

2013 - 2017 京都大学大学院工学研究科電子工学専攻
2009 - 2013 Kyoto University Faculty of Engineering School of Electrical & Electronic Engineering

Professional career (1)：

Work history (5)：

Committee career (7)：

2023/12 - 現在 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2024 Program Committee Member
2023/12 - 現在 2024 International Conference on Solid-State Devices and Materials (SSDM2024) Steering Committee Member
2022/08 - 現在 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD) Program Committee Member
2021/06 - 現在電子情報通信学会シリコン材料・デバイス研究会専門委員
2021/07 - 2023/10 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2023 Program Vice Chair

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Awards (6)：

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