Liu Jiangwei

Liu Jiangwei | Liu Jiangwei

Affiliation and department：
Job title： Principal Researcher

Research field (3)： Electric/electronic material engineering , Thin-film surfaces and interfaces , Electronic devices and equipment

Research keywords (1)：ダイヤモンド、応用物理、電子デバイス

Research theme for competitive and other funds (5)：

2023 - 2026 Improving the output current of boron-doped diamond MOSFETs
2020 - 2024 Develop a carrier control method for diamond using heterojunction doping technique
2016 - 2021 Development of diamond electron device using III-nitride nanolaminate singularity structure
2018 - 2020 Thermal stability improvement of diamond logic circuits for high-temperature application
2016 - 2018 Fabrication of high current output fin-type diamond field-effect transistors

Papers (73)：

Bo Da, Long Cheng, Xun Liu, Kunji Shigeto, Zihang Zhang, Kazuhito Tsukagoshi, Toshihide Nabatame, Zejun Ding, Jiangwei Liu, Hideki Yoshikawa, et al. Exploring high-symmetry structures in non-Cartesian coordinates: preparation and characteristics of cylindrically symmetric rotating crystals. Science and Technology of Advanced Materials: Methods. 2024
Bo Da, Long Cheng, Xun Liu, Kunji Shigeto, Kazuhito Tsukagoshi, Toshihide Nabatame, Zejun Ding, Yang Sun, Jin Hu, Jiangwei Liu, et al. Cylindrically symmetric rotating crystals observed in crystallization process of InSiO film. Science and Technology of Advanced Materials: Methods. 2023. 3. 1
Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, Yasuo Koide. Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates. Nanomaterials. 2023. 13. 7
Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins. Electrospun Stacked Dual-Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture. Advanced Electronic Materials. 2023. 9. 2
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition. IEEE Transactions on Electron Devices. 2023

ｍore...

MISC (3)：

Z. J. Ding, Chao Li, Bo Da, Jiangwei Liu. Charging effect induced by electron beam irradiation: a review. Science and Technology of Advanced Materials. 2021. 22. 1. 932-971
Xiao lu Yuan, Yu ting Zheng, Xiao hua Zhu, Jin long Liu, Jiang wei Liu, Cheng ming Li, Peng Jin, Zhan guo Wang. Recent progress in diamond-based MOSFETs. International Journal of Minerals, Metallurgy and Materials. 2019. 26. 10. 1195-1205
Jiangwei Liu, Yasuo Koide. An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors. Sensors (Switzerland). 2018. 18. 6

Patents (3)：

Education (1)：

Work history (6)：

2023/04 - 現在 National Institute for Materials Science
2018/04 - 2023/03 National Institute for Materials Science
2016/10 - 2022/03 National Institute for Materials Science
2014/01 - 2016/09 National Institute for Materials Science International Center for Young Scientist (ICYS)
2012/06 - 2013/12 National Institute for Materials Science

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Awards (2)：

2016/10 - 文部科学省卓越研究員
2013/07 - National Institute for Materials Science Best Poster Award of the NIMS Conference 2013 Combination with atomic layer deposition technique for fabrication of high-performance HfO2/diamond MOSFETs

Association Membership(s) (1)：

応用物理学会

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