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J-GLOBAL ID：201901013678757314   Update date: Feb. 01, 2024

Liu Jiangwei

Liu Jiangwei | Liu Jiangwei
Affiliation and department：
National Institute for Materials Science Research Center for Electronic and Optical Materials

About National Institute for Materials Science Research Center for Electronic and Optical Materials


Job title： Principal Researcher
Research field  (3)： Electric/electronic material engineering ,  Thin-film surfaces and interfaces ,  Electronic devices and equipment
Research keywords  (1)： ダイヤモンド、応用物理、電子デバイス
Research theme for competitive and other funds  (5)：
  • 2023 - 2026 Improving the output current of boron-doped diamond MOSFETs
  • 2020 - 2024 Develop a carrier control method for diamond using heterojunction doping technique
  • 2016 - 2021 Development of diamond electron device using III-nitride nanolaminate singularity structure
  • 2018 - 2020 Thermal stability improvement of diamond logic circuits for high-temperature application
  • 2016 - 2018 Fabrication of high current output fin-type diamond field-effect transistors
Papers (72)：
  • Bo Da, Long Cheng, Xun Liu, Kunji Shigeto, Kazuhito Tsukagoshi, Toshihide Nabatame, Zejun Ding, Yang Sun, Jin Hu, Jiangwei Liu, et al. Cylindrically symmetric rotating crystals observed in crystallization process of InSiO film. Science and Technology of Advanced Materials: Methods. 2023. 3. 1
  • Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, Yasuo Koide. Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates. Nanomaterials. 2023. 13. 7
  • Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins. Electrospun Stacked Dual-Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture. Advanced Electronic Materials. 2023. 9. 2
  • Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition. IEEE Transactions on Electron Devices. 2023
  • B. Da, X. Liu, J. M. Gong, Z. H. Zhang, Z. J. Ding, N. T. Cuong, J. Hu, J. W. Liu, Z. S. Gao, H. X. Guo, et al. Emitted secondary Electrons: In vacuo plasmon energy gain observation using a Three-Point probe method. Applied Surface Science. 2022. 596
ｍore...
MISC (3)：
  • Z. J. Ding, Chao Li, Bo Da, Jiangwei Liu. Charging effect induced by electron beam irradiation: a review. Science and Technology of Advanced Materials. 2021. 22. 1. 932-971
  • Xiao lu Yuan, Yu ting Zheng, Xiao hua Zhu, Jin long Liu, Jiang wei Liu, Cheng ming Li, Peng Jin, Zhan guo Wang. Recent progress in diamond-based MOSFETs. International Journal of Minerals, Metallurgy and Materials. 2019. 26. 10. 1195-1205
  • Jiangwei Liu, Yasuo Koide. An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors. Sensors (Switzerland). 2018. 18. 6
Patents (3)：
  • ノーマリーオフ特性を有する水素化ダイヤモンドMISFETの製造方法
  • トリプルゲートH-ダイヤモンドMISFET及びその製造方法 (2017)
  • ダイヤモンド半導体装置、それを用いたロジック装置、及びダイヤモンド半導体装置の製造方法
Education (1)：
  • 2008 - 2012 The University of Tokyo
Work history (6)：
  • 2023/04 - 現在 National Institute for Materials Science
  • 2018/04 - 2023/03 National Institute for Materials Science
  • 2016/10 - 2022/03 National Institute for Materials Science
  • 2014/01 - 2016/09 National Institute for Materials Science International Center for Young Scientist (ICYS)
  • 2012/06 - 2013/12 National Institute for Materials Science
Show all
Awards (2)：
  • 2016/10 - 文部科学省 卓越研究員
  • 2013/07 - National Institute for Materials Science Best Poster Award of the NIMS Conference 2013 Combination with atomic layer deposition technique for fabrication of high-performance HfO2/diamond MOSFETs
Association Membership(s) (1)：
応用物理学会
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