Rchr
J-GLOBAL ID:201901015029492266   Update date: Jun. 28, 2019

Mizue Ishikawa

イシカワ ミズエ | Mizue Ishikawa
Affiliation and department:
Research field  (4): Inorganic materials ,  Applied physics - general ,  Electric/electronic material engineering ,  Electronic devices and equipment
Research keywords  (3): Heusler ,  Si spin ,  Spintronics
Papers (9):
more...
Patents (2):
  • ホイスラー合金を有する積層体、この積層体を用いたスピンMOS電界効果トランジスタ及びトンネル磁気抵抗効果素子
  • Spin MOS field effect transistor and tunneling magnetoresistive effectelement using stack having Heusler alloy
Lectures and oral presentations  (1):
  • Large local magnetoresistance at room temperature in Si<100> devices
    (Intermag2018 2018)
Education (3):
  • 2016 - 2019 Osaka University Department of Systems Innovation
  • 2004 - 2006 Osaka University Department of Materials Engineering Science
  • 2000 - 2004 Nihon University Department of Physics
Professional career (1):
  • 博士(工学) (大阪大学)
Work history (3):
  • 2019/04/01 - Nihon University, College of Engineering Department of Electrical and Electronic Engineering Assistant Professor
  • 2006/04/01 - 2018/07/31 Toshiba Corporation Corporate Research & Development Center
  • Nihon University College of Engineering, Department of Electrical and Electronic Engineering Assistant Professor
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