J-GLOBAL ID:202001000315272552   Update date: Aug. 20, 2022

Hirai Hirohisa

Hirai Hirohisa
Research theme for competitive and other funds  (1):
  • 2015 - 2018 4H-SiC熱酸化界面構造の理解に基づくMOSFET高性能化のための材料設計
Papers (18):
  • Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 2022. 131. 14. 145701-145701
  • Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada, Hiroshi Yamaguchi. Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors. APPLIED PHYSICS LETTERS. 2021. 119. 7
  • Hiroki Sakata, Dai Okamoto, Mitsuru Sometani, Mitsuo Okamoto, Hirohisa Hirai, Shinsuke Harada, Tetsuo Hatakeyama, Hiroshi Yano, Noriyuki Iwamuro. Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method. Japanese Journal of Applied Physics. 2021. 60. 6. 060901-060901
  • Shogo Sekine, Masakazu Okada, Teruaki Kumazawa, Mitsuru Sometani, Hirohisa Hirai, Naoya Serizawa, Ryu Hasunuma, Mitsuo Okamoto, Shinsuke Harada. Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation. Japanese Journal of Applied Physics. 2021. 60. {SB}
  • Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura, Hiroshi Yamaguchi. Difference in electron mobility at 4H-SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering. Applied Physics Letters. 2020. 117. 4
MISC (5):
  • 平井悠久, 三浦喜直, 中島昭, 原田信介, 山口浩. Crystal face dependence of channel characteristics of GaN UMOS subjected to TMAH treatment. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • Miura Yoshinao, Hirai Hirohisa, Nakajima Akira, Harada Shinsuke. A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation into p-Type Layer. IEEE Conference Proceedings. 2021. 2021. ISPSD
  • Hirohisa Hirai, Koji Kita. Effects of high-temperature diluted-H-2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2 (Retraction of Vol 55, 10.7567/JJAP.55.04ER16, 2016). JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 7
  • HIRAI Hirohisa, KITA Koji. Oxidation-ambience-dependent near-interface structure of thermally grown oxide on 4H-SiC. Technical report of IEICE. SDM. 2014. 114. 88. 97-100
  • KITA Koji, Hirai Hirohisa. Study on Near-interface Structures of Thermal Oxides Grown on 4H-SiC Characterized by Infrared Spectroscopy. Technical report of IEICE. SDM. 2013. 113. 87. 97-100
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