Uesugi Kenjiro

ウエスギケンジロウ | Uesugi Kenjiro

Affiliation and department：
Job title： Senior epitaxy engineer
Homepage URL (1)： https://www.allos-semiconductors.com/

Research field (2)： Electronic devices and equipment , Crystal engineering

Research keywords (4)： Crystal growth , Light-emitting diode , Metalorganic vapor phase epitaxy , III-nitiride semiconductors

Research theme for competitive and other funds (5)：

2022 - 2026 Development of GaN CMOS Monolithic Integrated Circuits Technology Using Crystal Hetero-Polarity Control
2022 - 2025 窒化物半導体AlGaNの非極性面成長と深紫外LED応用
2022 - 2024 Development of 220 nm band deep-ultraviolet light-emitting diodes using high-quality AlN templates
2021 - 2024 Development of Visualization Method for Luminescence Efficiency Distribution of Nitride Semiconductors by Local Current Injection
2021 - 2022 Verification of commercialization of high quality nitride semiconductor epitaxial growth technology

Papers (41)：

Kosuke Inai, Ryota Oshimura, Kunio Himeno, Megumi Fujii, Yuta Onishi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low-Dislocation Sputtered AlN Templates. physica status solidi (b). 2024
Hideaki Murotani, Kosuke Inai, Kunio Himeno, Kaichi Tani, Hiromasa Hayashi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Temperature- and Excitation Power Density-Resolved Photoluminescence of AlGaN-Based Multiple Quantum Wells Emitting in the Spectral Range of 220-260 nm. physica status solidi (b). 2024
Kanako Shojiki, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake. Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing. Materials Science in Semiconductor Processing. 2023. 166. 107736-107736
Gaku Namikawa, Kanako Shojiki, Riku Yoshida, Ryusei Kusuda, Kenjiro Uesugi, Hideto Miyake. MOVPE growth of AlN and AlGaN films on N-polar annealed and sputtered AlN templates. Journal of Crystal Growth. 2023. 617. 127256-127256
Satoshi Kurai, Megumi Fujii, Yuta Ohnishi, Ryota Oshimura, Kosuke Inai, Kunio Himeno, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates. AIP Advances. 2023. 13. 4

ｍore...

MISC (16)：

大石悠翔, XIAO Shiyu, 上杉謙次郎, 上杉謙次郎, 秋山亨, 玉野智弘, 三宅秀人. Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing. 電子情報通信学会技術研究報告(Web). 2023. 123. 288(ED2023 14-37)
大石悠翔, XIAO Shiyu, 上杉謙次郎, 上杉謙次郎, 秋山亨, 三宅秀人. Effects of AlN template polarity on BN grown by MOVPE. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
Development of UV-C LED using high-temperature annealed sputter-deposited AlN template. 2021. 2021. 34-38. 17-22
渋谷康太, 上杉謙次郎, 上杉謙次郎, XIAO Shiyu, 正直花奈子, 窪谷茂幸, 秋山亨, 三宅秀人, 三宅秀人. Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire. 電子情報通信学会技術研究報告(Web). 2021. 121. 259(ED2021 15-36)
渋谷康太, 上杉謙次郎, 上杉謙次郎, XIAO S., 正直花奈子, 窪谷茂幸, 秋山亨, 三宅秀人, 三宅秀人. Substrates Off-Cut Dependence on the Crystallinity of the a-plane AlN Prepared by Sputtering and Annealing Method. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd

ｍore...

Patents (23)：

ｍore...

Lectures and oral presentations (14)：

Fabrication of Face-to-Face Annealed Sputter-Deposited AlN for High EQE 265 nm LEDs
(5th International Workshop on UV Materials and Devices (IWUMD2022) 2022)
High-Power UV-C LED on Face-to-Face Annealed Sputter-Deposited AlN
(The 10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2022) 2022)
低転位密度AlNテンプレート上へのAlGaN成長と265nm発光LEDへの応用
(2022年日本結晶成長学会特別講演会「赤﨑勇先生追悼公演会 ~結晶成長が描く夢の継承~」 2022)
High-power operation of DUV-LED grown on high-temperature annealed AlN templates
(The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity (IWSingularity 2022) 2022)
高温アニールAlNテンプレートを用いたUV-C LEDの開発
(ワイドギャップ半導体学会第4回研究会 2021)

ｍore...

Education (2)：

2011 - 2013 The University of Tokyo Graduate School of Frontier Sciences Department of Advanced Materials Science
2007 - 2011 The University of Tokyo The Faculty of Engineering Department of Applied Physics

Professional career (1)：

Work history (9)：

2023/12 - 現在 ALLOS Semiconductors GmbH Senior epitaxy engineer
2023/05 - 2023/11 Mie University Graduate School of Regional Innovation Studies Associate Professor
2023/03 - 2023/11 Mie University Organization for Research Initiative and Promotion Associate Professor
2019/09 - 2023/04 Mie University Graduate School of Regional Innovation Studies Assistant Professor
2022/04 - 2023/02 Mie University MIE Regional Co-creation Organization Assistant Professor

Show all

Awards (5)：

2022/03 - Mie University 2021 Outstanding Paper Award Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template
2022/01 - The Institute of Electrical Engineers of Japan 2021 Society C Technical Committee Award
2019/04 - OPTICS & PHOTONICS International Council The 7th International Conference on Light Emitting Devices and Their Industrial Applications (LEDIA2019), Young Researcher’s Paper Award Threading Dislocation Reduction of Sputter-Deposited AlN Templates for Deep-Ultraviolet Light-Emitting Device Applications
2019/03 - The Japan Society of Applied Physics The 79th JSAP Autumn Meeting Young Scientist Presentation Award
2018/07 - 日本結晶成長学会ナノエピ分科会第10回ナノ構造・エピタキシャル成長講演会研究奨励賞 6H-SiC基板上におけるAlN周期構造の作製と評価

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page