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J-GLOBAL ID：202001001837401898   Update date: Nov. 06, 2024

Watanabe Heiji

ワタナベ ヘイジ | Watanabe Heiji
Affiliation and department：
大阪大学 大学院工学研究科 物理学系専攻

About 大阪大学 大学院工学研究科 物理学系専攻


Job title： 教授
Homepage URL  (1)： http://www-ade.prec.eng.osaka-u.ac.jp/index.html
Research theme for competitive and other funds  (31)：
  • 2024 - 2029 Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices
  • 2021 - 2024 炭化珪素半導体MOS界面科学と界面設計指針の再構築
  • 2021 - 2024 高Sn組成GeSn結晶創成を目指したスパッタエピタキシー法の構築
  • 2019 - 2023 界面反応制御を基軸とした高効率高信頼性GaN半導体MOSデバイスの創成
  • 2015 - 2018 Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
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Papers (954)：
  • Kazuki Tomigahara, Masahiro Hara, Mikito Nozaki, Takuma Kobayashi, Heiji Watanabe. Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces. Applied Physics Express. 2024. 17. 8. 081002-1-081002-4
  • Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 2024. 175. 108251-108251
  • Sosuke Iwamoto, Takayoshi Shimura, Heiji WATANABE, Takuma Kobayashi. Oxygen-related defects in 4H-SiC from first principles. Applied Physics Express. 2024. 17. 5. 051008-1-051008-5
  • Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi. Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures. Applied Physics Express. 2024. 17. 5. 051004-1-051004-5
  • Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe. Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 2023. 17. 1. 011003-011003
ｍore...
MISC (11)：
  • Shirakawa H., Kamiya K., Watanabe H., Shiraishi K. 10aAS-1 Theoretical Study of Proton diffusion in SiC-MOS device. Meeting abstracts of the Physical Society of Japan. 2014. 69. 2. 674-674
  • HOSOI Takuji, AZUMO Shuji, KASHIWAGI Yusaku, HOSAKA Shigetoshi, NAKAMURA Ryota, MITANI Shuhei, NAKANO Yuki, ASAHARA Hirokazu, NAKAMURA Takashi, KIMOTO Tsunenobu, et al. Performance and Reliability Improvement in SiC Power MOSFETs by Implementing AlON High-k Gate Dielectrics. Technical report of IEICE. SDM. 2013. 112. 421. 19-22
  • Technology Trends and Future Prospects of High-κ Gate Dielectrics. 2012. 95. 11. 960-964
  • 川村浩太, 三島永嗣, 志村考功, 渡部平司, 安武潔, 神山聡, 赤坂泰志, 奈良安雄, 中村邦雄, 山田啓作. X線反射率測定によるTiN/HfSiON界面の熱安定性評価. 精密工学会大会学術講演会講演論文集. 2006. 2006. I04
  • 三島永嗣, 川村浩太, 志村考功, 渡部平司, 安武潔, 神山聡, 赤坂泰志, 奈良安雄, 中村邦雄, 山田啓作. 熱処理に伴うHfSiOx/SiO2/Si構造の界面酸化反応のX線CTR散乱測定. 精密工学会大会学術講演会講演論文集. 2005. 2005. 0. J45-820
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Patents (21)：
  • X線位相差撮像装置
  • 単結晶状GeSn含有材料の製造方法および単結晶状GeSn含有材料基板
  • 高誘電率薄膜を用いた半導体装置の製造方法
  • 半導体装置およびその製造方法
  • 半導体装置およびその製造方法
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Books (1)：
  • Fundamental Aspects of Silicon Oxidation, Springer (Layer-by-Layer Oxidation of Si(001) Surfaces, pp.89-105.)
    Springer 2001
Lectures and oral presentations  (106)：
  • Reduction of hole traps in SiO2/GaN MOS structures by properly designing the oxide interlayer
    (12th International Workshop on Nitride Semiconductors (IWN 2024) 2024)
  • Investigation of oxygen-related defects in 4H-SiC from ab initio calculations
    (the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
  • Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing
    (the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
  • Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
    (the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
  • Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
    (the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
ｍore...
Education (2)：
  • - 1990 Osaka University Graduate School, Division of Engineering
  • - 1988 Osaka University Faculty of Engineering
Work history (16)：
  • 2022/07 - 現在 日本学術振興会 学術システム研究センター 主任研究員
  • 2020/04/01 - 現在 Osaka University Graduate School of Engineering . Professor
  • 2019/08 - 現在 大阪大学大学院工学研究科副研究科長
  • 2017/04 - 現在 大阪大学・栄誉教授
  • 2014/04 - 現在 大阪大学大学院工学研究科執行部(総務室長)
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Awards (16)：
  • 2022/07 - The Japan Society of Applied Physics Join JSAP 2022 JSAP Fellow Award Research and Development of Advanced MOS Devices Based on Semiconductor Surface and Interface Science
  • 2021/08 - The 43rd JSAP Award for Best Review Paper Defect engineering in SiC technology for high-voltage power devices
  • 2019/04 - 文部科学省 文部科学大臣表彰(科学技術賞・研究部門)
  • 2015/07 - Osaka University The 4th Presidential Awards for Achievement in Research, Osaka University
  • 2014/07 - Osaka University The 3rd Presidential Awards for Achievement in Research, Osaka University
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Association Membership(s) (3)：
The Japan Society of Vacuum and Surface Science ,  IEEE ,  応用物理学会
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