Rchr
J-GLOBAL ID:202001017616880140
Update date: Jul. 17, 2024
Araidai Masaaki
アライダイ マサアキ | Araidai Masaaki
Affiliation and department:
Job title:
Assistant Professor
Other affiliations (2):
Research theme for competitive and other funds (19):
- 2022 - 2025 機械学習ポテンシャルによる協奏的現象の速度論解析
- 2019 - 2023 Si-Ge系スーパーアトムの内部ポテンシャル変調による量子機能材料創成
- 2020 - 2022 Formation of Ge two-dimensional crystals embedded into Si oxide and its device application
- 2019 - 2022 Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples
- 2018 - 2022 Clarification of interface formation and electronic properties of power semiconductors through quantum theoretical computics
- 2019 - 2021 第一原理計算からの気液固複合相ヘテロ界面の実在系非平衡シミュレーション
- 2019 - 2021 一般化アンサンブル法を用いたGaN結晶成長の解析
- 2018 - 2021 量子論コンピューティクスによるパワー半導体界面形成機構と電子物性の解明
- 2018 - 2020 Self-organized Formation of Ge-based Two-dimensional Crystals and Control of Crystalline Structure and Electronic State
- 2018 - 2020 ゲルマニウム系二次元ハニカム結晶の自己組織化形成と結晶構造・電子状態制御
- 2014 - 2020 カルコゲン化合物・超格子のトポロジカル相転移を利用した二次元マルチフェロイック機能デバイスの創製
- 2016 - 2019 Development of free-energy calculation method based on the first-principles electronic-structure calculations and its application
- 2015 - 2018 Synthesis of New Group IV Two Dimensional Materials
- 2015 - 2017 Growth and Characterization of Silicon-based Two-Dimensional Materials
- 2015 - ナノスケール次世代電子デバイスの第一原理電子状態計算に基づく理論研究
- 2009 - 2013 ナノ空間における溶液物性と電気化学過程の理論的解明
- 2009 - 2012 Theoretical study on property of aqueous solution and electrochemical process at nano-space
- 2004 - 2007 時間依存密度汎関数法による炭素系ナノ構造の非平衡電子状態の研究
- 2004 - 2006 時間依存密度汎関数法による炭素系ナノ構造の非平衡電子状態の研究
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Papers (95):
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Yuto Hasuo, Takahiro Urata, Masaaki Araidai, Yuji Tsuchiya, Satoshi Awaji, Hiroshi Ikuta. Single Crystal Growth and Transport Properties of van der Waals Materials ABTe4 (A/B = Ti, Zr, Hf). Journal of the Physical Society of Japan. 2024. 93. 1
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Hiroshi Kamimura, Masaaki Araidai, Kunio Ishida, Shunichi Matsuno, Hideaki Sakata, Kenji Sasaoka, Kenji Shiraishi, Osamu Sugino, Jaw-Shen Tsai, Kazuyoshi Yamada. Elucidation of Spin-Correlations, Fermi Surface and Pseudogap in a Copper Oxide Superconductor. Condensed Matter. 2023. 8. 2. 33-33
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Yoshiki Ohata, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi. Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023. 157
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Keisuke Morishita, Yosuke Harashima, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi. Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-Transfer Torque Magnetic Random Access Memory: A First-Principles Study. IEEE Transactions on Magnetics. 2023. 59. 4. 1-6
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Yutaro Ogawa, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi. Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction. Journal of Applied Physics. 2022. 132. 21. 213904-213904
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MISC (17):
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白川裕規, 洗平昌晃, 神谷克政, 白石賢二. MONOS型メモリにおける絶縁膜中の原子欠陥に関する第一原理計算. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2015. 62nd
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ARAIDAI Masaaki, YAMAMOTO Takahiro, SHIRAISHI Kenji. First-Principles Simulation on Electron Scattering Process of Magnetoresistance Memory. IEICE technical report. Electron devices. 2014. 114. 56. 47-50
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Araidai M., Kato S., Yamamoto T., Shiraishi K. 28pPSA-35 Effect of Spin-Orbit Interactions on Electron Transport Properties of GeSbTe Phase-Change Memory Device. Meeting abstracts of the Physical Society of Japan. 2014. 69. 1. 886-886
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Araidai M., Yamamoto T., Shiraishi K. First-Principles Study on Current-Induced Magnetization Switching of Magnetoresistive Memory Device. Meeting abstracts of the Physical Society of Japan. 2013. 68. 2. 621-621
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Araidai M., Kato S., Yamamoto T., Shiraishi K. 26pPSA-22 First-Principles Study on Structure and Electron Transport Properties of Phase-Change Memory Device. Meeting abstracts of the Physical Society of Japan. 2013. 68. 1. 975-975
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Lectures and oral presentations (71):
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Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing
(2019)
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超格子GeTe/Sb2Te3メモリの第一原理計算による構造変化シミュレーション
(電子情報通信学会 2019)
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Neural network potential for Si/SiO<sub>2</sub> interface
(The Physical Society of Japan 2018)
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Two-dimensional structure of Ge atoms segregated on Ag(111)
(The Physical Society of Japan 2018)
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The electric field effect and the dependence of nanoribbon width in monolayer nanoribbons of IV group materials
(The Physical Society of Japan 2018)
more...
Education (3):
- 2004 - 2007 Tokyo University of Science Graduate School, Division of Natural Science
- 2002 - 2004 Tokyo University of Science Graduate School, Division of Natural Science
- 1998 - 2002 Tokyo University of Science Faculty of Science
Professional career (1):
Work history (5):
- 2015/10/01 - 現在 未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 助教
- 2013/08/01 - 2015/09/30 名古屋大学 大学院工学研究科 量子工学専攻 助教
- 2012/08/01 - 2013/07/31 筑波大学 計算科学研究センター 研究員
- 2009/04/01 - 2012/07/31 東北大学 原子分子材料科学高等研究機構 産学官連携研究員
- 2007/11/01 - 2009/03/31 早稲田大学 ナノ理工学研究機構 客員講師(専任扱い)
Committee career (3):
- 2018/12 - 2020/03 日本物理学会第75回年次大会実行委員会 市民科学講演会担当
- 2018/11 - 2019/12 EXECUTIVE COMMITTEE of ICMASS2019 Web担当
- 2016/06 - 2017/12 EXECUTIVE COMMITTEE of ICMASS2017 Award担当
Awards (4):
- 2018/11/14 - 31st International Microprocesses and Nanotechnology Conference Organizing Committee MNC 2017 Award for Outstanding Paper Growth of Two-Dimensional Ge Crystal by Annealing of Heteroepitaxial Ag/Ge(111) under N<sub>2</sub> Ambient
- 2016/09/07 - 公益社団法人 日本磁気学会 日本磁気学会論文賞 Theoretical Investigation on Electronic and Magnetic Structures of FeRh
- 2015/11/04 - Organizing Committee of 2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY- IWDTF Young Paper Award Evaluation of Energy Band Structure of Si<sub>1-x</sub>Sn<sub>x</sub> by Density Functional Theory Calculation and Photoelectron Spectroscopy
- 2015/03/12 - The 62nd JSAP Spring Meeting, 2015 Poster Award First principles stucy on atomic defects in insulators of MONOS memory
Association Membership(s) (4):
日本表面科学会
, 日本磁気学会
, 応用物理学会
, 日本物理学会
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