ISHIKAWA Yukari

Affiliation and department：

Research field (1)： Crystal engineering

Research keywords (4)： etching , dislocation , GaN , SiC

Papers (153)：

Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Makoto Miyoshi, Takashi Egawa. Characteristics of dislocations induced by Vickers indentation in hydride vapor phase epitaxy GaN. Journal of Materials Science. 2024. 59. 2974-2987
Yongzhao Yao, Yoshihiro Sugawara, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa. Anisotropic mechanical properties of β-Ga₂O₃ single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter【Open Access】. Journal of Applied Physics. 2023. 134. 215106
Yongzhao Yao, Yoshiyuki Tsusaka, Keiichi Hirano, Kohei Sasaki, Akito Kuramata, Yoshihiro Sugawara, Yukari Ishikawa. Three-dimensional distribution and propagation of dislocations in β-Ga₂O₃ revealed by Borrmann effect X-ray topography【Open Access】. Journal of Applied Physics. 2023. 134. 155104
Taketo Kowaki, Wataru Matsumura, Koki Hanasaku, Ryo Okuno, Daisuke Inahara, Shunsuke Matsuda, Satoshi Kurai, Yongzhao Yao, Yukari Ishikawa, Narihito Okada, et al. Si Doping Effects in AlGaN Channel Layer on Performance of N-polar AlGaN/AlN FETs. physica status solidi (a). 2023
Yukari Ishikawa, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yongzhao Yao, Kenta Watanabe, Takashi Okawa. Characterization of dislocations at the emission site by emission microscopy in GaN p-n diodes. Journal of Materials Science. 2023

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MISC (2)：

姚永昭, 石川由加里, 菅原義弘. 低損失・省エネパワーデバイス用SiC結晶欠陥検出技術の開発 (特集環境・エネルギー問題に挑戦するJFCC). 金属. 2013. 83. 5. 425-432
Development of crystal defect revelation techniques for silicon carbide. 2012. 25. 6. 16-21

Work history (4)：

Committee career (2)：

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