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J-GLOBAL ID：202001018867170637   Update date: Apr. 17, 2023

miura sadahiko

ミウラ サダヒコ | miura sadahiko
Affiliation and department：
NanoBridge Semiconductor, Inc Development and Product Department

About NanoBridge Semiconductor, Inc Development and Product Department


Job title： Senior Expert
Research theme for competitive and other funds  (1)：
  • 2018 - 2021 Hard-axis switching model of perpendicular anisotropy magnetic tunnel junctions and their sensor applications
Papers (100)：
  • H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, T. Nasuno, T. Tanigawa, Y. Noguchi, H. Inoue, M. Yasuhira, et al. 25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance>107 for eFlash-type MRAM. IEEE International electron devices meeting. 2022. 226-229
  • Hiroki Koike, Takaho Tanigawa, Toshinari Watanabe, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Toru Yoshiduka, Yitao Ma, Hiroaki Honjo, Koichi Nishioka, et al. 40 nm 1T-1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design. IEEE TRANSACTIONS ON MAGNETICS. 2021. 57. 3
  • H. Naganuma, S. Miura, H. Honjo, K. Nishioka, T. Watanabe, T. Nasuno, H. Inoue, T. V.A. Nguyen, Y. Endo, Y. Noguchi, et al. Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm. Digest of Technical Papers - Symposium on VLSI Technology. 2021. 2021-June
  • K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V. A. Nguyen, T. Watanabe, S. Ikeda, T. Endoh. Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer. IEEE Transactions on Magnetics. 2021. 1-1
  • H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh. Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers. IEEE Transactions on Magnetics. 2021. 1-1
ｍore...
MISC (17)：
  • SAKIMURA Noboru, TSUJI Yukihide, NEBASHI Ryusuke, HONJO Hiroaki, MORIOKA Ayuka, ISHIHARA Kunihiko, KINOSHITA Keizo, FUKAMI Shunsuke, MIURA Sadahiko, KASAI Naoki, et al. A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications. Technical report of IEICE. ICD. 2014. 114. 175. 39-44
  • SAKIMURA Noboru, TSUJI Yukihide, NEBASHI Ryusuke, HONJO Hiroaki, MORIOKA Ayuka, ISHIHARA Kunihiko, KINOSHITA Keizo, FUKAMI Shunsuke, MIURA Sadahiko, KASAI Naoki, et al. A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications. Technical report of IEICE. SDM. 2014. 114. 174. 39-44
  • OHSAWA Takashi, KOIKE Hiroki, MIURA Sadahiko, KINOSHITA Keizo, HONJO Hiroaki, IKEDA Shoji, HANYU Takahiro, OHNO Hideo, ENDOH Tetsuo. A 1Mb STT-MRAM for Nonvolatile Embedded Memories performing 1.5ns/2.1ns Random Read/Write Cycle Time : Background Write (BGW) Scheme applied to a 6T2MTJ Memory Cell. Technical report of IEICE. ICD. 2014. 114. 13. 33-38
  • KOIKE Hiroki, SAKIMURA Noboru, NEBASHI Ryusuke, TSUJI Yukihide, MORIOKA Ayuka, MIURA Sadahiko, HONJO Hiroaki, SUGIBAYASHI Tadahiko, OHSAWA Takashi, IKEDA Shoji, et al. A Power-Gated MPU with 3-μsec Entry/Exit Delay using MTJ-Based Nonvolatile Flip-Flop. Technical report of IEICE. ICD. 2014. 114. 13. 85-90
  • MATSUNAGA Shoun, MIURA Sadahiko, HONJO Hiroaki, KINOSHITA Keizo, IKEDA Shoji, ENDOH Tetsuo, OHNO Hideo, HANYU Takahiro. Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure. Technical report of IEICE. ICD. 2013. 113. 1. 33-38
ｍore...
Education (3)：
  • 2000 - Waseda University Graduate School of Science and Engineering
  • 1984 - 1986 Waseda University Graduate School of Science and Engineering
  • 1980 - 1984 Waseda University School of Science and Engineering
Professional career (1)：
  • Ph. D (Waseda University)
Work history (4)：
  • 2023/02 - 現在 NanoBridge Simiconductor, Inc Development and Oroduct Department Senior Expert
  • 2011/04 - 2023/01 Tohoku University
  • 1986/04 - 2022/09 NEC Corporation
  • 1995/07 - 1998/04 超電導工学研究所
Committee career (2)：
  • 2012/04 - 2014/03 The Japan Society of Applied Physics Bulletin editorial board
  • 2009/08 - 2011/07 International Conference on Solid State Devices and Materials Area 2 (memory) Editorial Board
Association Membership(s) (1)：
The Japan Society of Applied Physics
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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