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J-GLOBAL ID：202101002932951424
Update date: Oct. 02, 2023
Visikovskiy Anton
ビシコフスキー アントン | Visikovskiy Anton
Affiliation and department：
Job title：
Assistant Professor
Research theme for competitive and other funds (12)：
- 2021 - 2023 Honeycomb nitrides layers as playground for Xenes formation
- 2018 - 2020 Heavy group III, IV, and V elements triangular lattice atomic layers on semiconductor surfaces - a new kind of 2D Dirac materials
- 2017 - 2019 Intercalation into graphene/SiC interface as a method to tune graphene properties and promote growth of new 2D materials
- 2017 - 2018 Investigation of structural and electronic properties of group IV elements (Sn, Pb) triangular lattice atomic layers (TLAL) on SiC surface and at graphene/SiC interface.
- 2016 - 2017 Modification of graphene/SiC interface by atom intercalation
- 2016 - 2016 Modification of graphene electronic structure with periodic interface of a substrate
- 2015 - 2016 Graphene/SiC interface engineering by materials intercalation
- 2015 - 2015 Graphene/SiC interface engineering
- 2014 - 2015 One-dimensional Ni silicide and graphene nanostructure formation on vicinal SiC surfaces
- 2013 - 2015 Silicides formation and metal-assisted graphene growth on vicinal SiC
- 2014 - 2014 One-dimensional silicide formation and promotion of graphene nanostructures growth on vicinal SiC surfaces.
- 2012 - 2012 Formation and characterization of graphene nanoribbons on vicinal SiC surfaces
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Papers (35)：
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Iimori Takushi, Visikovskiy Anton, Imamura Hitoshi, Miyamachi Toshio, Kitamura Miho, Horiba Koji, Kumigashira Hiroshi, Mase, Kazuhiko, Nakatsuji Kan, et al. Electronic structure of 3 degrees-twisted bilayer graphene on 4H-SiC(0001). PHYSICAL REVIEW MATERIALS. 2021. 5. 5. L051001
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H. Imamura, A. Visikovskiy, R. Uotani, T.Kajiwara, H. Ando, T. Iimori, K. Iwata, T. Miyamachi, K. Nakatsuji, K. Mase, et al. Twisted bilayer graphene fabricated by direct bonding in a high vacuum. APPLIED PHYSICS EXPRESS. 2020. 13. 7. 075004
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H. Ando, A. Visikovskiy, T. Nakagawa, S. Mizuno, S.Tanaka. Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED. PHYSICAL REVIEW B. 2019. 99. 23. 235434
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Koichiro Yaji, Anton Visikovskiy, Takushi Iimori, Kenta Kuroda, Singo Hayashi, Takashi Kajiwara, Tanaka Satoru, Fumio Komori, Shik Shin. Coexistence of Two Types of Spin Splitting Originating from Different Symmetries. Physical Review Letters. 2019. 122. 12. 126403
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Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, et al. Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface. Applied Physics Express. 2018. 11. 1
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Lectures and oral presentations (47)：
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Investigating of electronic and structural features of mm-sized twisted bilayer graphene experimentally and by simulation
(13回九大2D物質研究会 2021)
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2D tin layers on SiC(0001)
(The Fullerenes, Nanotubes and Graphene Research Society 2020)
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Rotation-angle controlled twisted bilayer graphene
(Atomic Level Characterization (ALC-19) 2019)
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Computational study of ultra-thin epitaxial aluminum oxide on SiC(0001)
(Physical Society of Japan 2019)
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Electronic structure of asymmetrically doped twisted multilayer graphene.
(Physical Society of Japan 2020)
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Awards (2)：
- 2011/08 - ASCO-NANOMAT 2011の会議 Young Scientist Award
- 2007/12 - 日本表面科学会中部支部の会議 Best presentation award
Association Membership(s) (2)：
Japanese Society of Applied Physics
, Physical Society of Japan
