Rchr
J-GLOBAL ID：202101004625238144
Update date: Oct. 08, 2024
IMABAYASHI Hiroki
イマバヤシ ヒロキ | IMABAYASHI Hiroki
Affiliation and department：
Job title：
Assistant Professor
Research field (2)：
Electric/electronic material engineering
, Thin-film surfaces and interfaces
Research theme for competitive and other funds (1)：
- 2023 - 2026 高信頼性有機半導体デバイス実現に向けた非接触・in-situ二次元評価法の確立
Papers (9)：
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Kenji Shiojima, Hiroki Kawai, Yuto Kawasumi, Hiroshi Takehira, Yuki Wakisaka, Hiroki Imabayashi, Takeshi Iwasaki, Katsuyoshi Komatsu, and Tadaomi Daibou. Local bandgap narrowing in forming state of threshold switching materials. Applied Physics Letters. 2024. 125. 2. 023503-(7)
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Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, and Kenji Shiojima. Photoelectrical characterization of heavily doped,p-SiC Schottky contacts. Japanese Journal of Applied Physics. 2024. 63. 04SP71-(6)
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Hiroki Imabayashi, Haruto Yoshimura, Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura, Hiroshi Ohta, Tomoyoshi Mishima, and Kenji Shiojima. Two-Dimensional Characterization of Au/Ni/Thin Heavily-Mg-Doped p-/n-GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy. Phys. Status Solidi B. 2024. 2400033-(7)
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Hiroki Imabayashi, Kenji Shiojima, Tetsu Kachi. Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy. Materials Science in Semiconductor Processing. 2023. 162. 107536-(8)
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Hiroki Imabayashi, Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima, and Kenji Shiojima. Characterization of peripheries of n-GaN Schottky contacts using scanning,internal photoemission microscopy. Japanese Journal of Applied Physics. 2022. 62. SA. SA1012-(7)
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Lectures and oral presentations (30)：
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Two-dimensional characterization of junction barrier Schottky structure ,by scanning internal photoemission microscopy
(The 85th JSAP Autumn Meeting 2024 2024)
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Improvement of uniformity by face-to-face ultra-high-pressure annealing observed by ,scanning internal photoemission microscopy using Au/Ni/n-GaN Schottky contacts
(The 85th JSAP Autumn Meeting 2024 2024)
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Improvement of Uniformity by Face-to-Face Ultra-High-Pressure Annealing Observed by Scanning Internal Photoemission Microscopy Using Au/Ni/n-GaN Schottky Contacts
(2024 International Conference on Solid State Devices and Materials 2024)
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Precise Measurements of Small Reverse-Biased-Currents for Large-Barrier Au/Ni/n-GaN Schottky Contacts
(2024 International Conference on Solid State Devices and Materials 2024)
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Mapping evaluation of GaN JBS structure by SIPM
(2024年度 日本材料学会 半導体エレクトロニクス部門委員会 第1回研究会 2024)
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Education (1)：
- 2011 - 2014 Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering
Professional career (1)：
- 博士(工学) (Osaka University)
Work history (3)：
- 2021/01 - 2021/02 Sharp Display Technology Corp. 研究員
- 2017/04 - 2020/12 Sharp Corp. ディスプレイデバイスカンパニー 研究員
- 2010/04 - 2017/03 WDBエウレカ株式会社
Awards (2)：
- 2024/07 - Arerican Institure of Physics Featured Article in Applied Physics Letters Local bandgap narrowing in forming state of threshold switching materials
- 2022/10 - ADMETA 2022 plus Poster Award Internal Photoemission Characterization for Low-Temperature-Grown GaAsBi Layers
Association Membership(s) (1)：
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