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J-GLOBAL ID：202101019290115902   Update date: May. 12, 2024

Nishimura Tomonori

Nishimura Tomonori
Research theme for competitive and other funds  (7)：
  • 2022 - 2025 二次元層状物質を用いた金属/Si,Ge界面のバンドアライメント決定機構の解明
  • 2018 - 2021 Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cell
  • 2017 - 2020 Contact resistance lowering at metal/Ge interface by controlling metal property and interface structure
  • 2013 - 2016 Study of Fermi level pinning at metal/germanium interface and its alleviation mechanism
  • 2010 - 2011 Study of interface passivation effect on band alignment at metal/semiconductor interface
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Papers (119)：
  • Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Single-Gate MoS<sub>2</sub> Tunnel FET with a Thickness-Modulated Homojunction. ACS Applied Materials & Interfaces. 2024. 16. 7. 8993-9001
  • Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Haonan Wang, Yubei Xiang, Keisuke Shinokita, Kazunari Matsuda, Takashi Taniguchi, Kenji Watanabe, et al. Shift Current Photovoltaics based on A Noncentrosymmetric Phase in in-plane Ferroelectric SnS. Advanced Materials. 2023
  • Masaya Umeda, Naoki Higashitarumizu, Ryo Kitaura, Tomonori Nishimura, Kosuke Nagashio. Identification of the position of piezoelectric polarization at the MoS2/metal interface. APPLIED PHYSICS EXPRESS. 2021. 14. 12
  • Yih-Ren Chang, Tomonori Nishimura, Kosuke Nagashio. Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS APPLIED MATERIALS & INTERFACES. 2021. 13. 36. 43282-43289
  • Yuichiro Sato, Tomonori Nishimura, Dong Duanfei, Keiji Ueno, Keisuke Shinokita, Kazunari Matsuda, Kosuke Nagashio. Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n(+)-Source for 2D Tunnel FETs. ADVANCED ELECTRONIC MATERIALS. 2021. 7. 12
ｍore...
MISC (6)：
  • Li Xiuyan, Yajima Takeaki, Nishimura Tomonori, Nagashio Kosuke, Toriumi Akira. Analytical formulation of interfacial SiO_2 scavenging in HfO_2/SiO_2/Si stacks. Technical report of IEICE. SDM. 2015. 114. 421. 1-4
  • LEE Choong Hyun, NISHIMURA Tomonori, TABATA Toshiyuki, WANG Sheng Kai, NAGASHIO Kosuke, KITA Koji, TORIUMI Akira. Ge MOSFETs performance : Impact of Interface Passivation. IEICE technical report. 2011. 110. 406. 9-12
  • KITA KOJI, NISHIMURA TOMONORI, NAGASHIO KOSUKE, TORIUMI AKIRA. Control of GeO2/Ge Interface Reactions toward Ge-CMOS Gate Stacks. Abstract of annual meeting of the Surface Science of Japan. 2011. 31. 0. 172-172
  • KITA Koji, WANG Sheng Kai, LEE Choong Hyun, YOSHIDA Mahoro, NISHIMURA Tomonori, NAGASHIO Kosuke, TORIUMI Akira. Control of GeO_2 Properties and Improvement of Ge/GeO_2 Interface Characteristics Based on Understanding of GeO_2/Ge Interface Reaction. IEICE technical report. 2010. 110. 90. 55-60
  • KITA Koji, WANG Sheng Kai, LEE Choong Hyun, YOSHIDA Mahoro, NISHIMURA Tomonori, NAGASHIO Kosuke, TORIUMI Akira. Control of GeO_2 Properties and Improvement of Ge-MOSFET Performances Based on Understanding of GeO_2/Ge Interface Reaction. 2010. 2010. 36. 7-12
ｍore...
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