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J-GLOBAL ID：202101020254741684   Update date: Sep. 24, 2024

Kobayashi Takuma

コバヤシ タクマ | Kobayashi Takuma
Affiliation and department：
Osaka University Graduate School of Engineering

About Osaka University Graduate School of Engineering


Job title： Associate Professor
Homepage URL  (2)： http://www-ade.prec.eng.osaka-u.ac.jp/ ,  http://www-ade.prec.eng.osaka-u.ac.jp/index-e.php
Research field  (3)： Optical engineering and photonics ,  Thin-film surfaces and interfaces ,  Electric/electronic material engineering
Research keywords  (4)： Wide Bandgap Semiconductors ,  Power Devices ,  Quantum Technology ,  Defects
Research theme for competitive and other funds  (6)：
  • 2024 - 2029 Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices
  • 2022 - 2026 集積可能な炭化珪素光量子プロセッサの基盤技術構築
  • 2023 - 2025 窒化ガリウムMOSデバイスにおけるキャリア散乱機構の研究
  • 2021 - 2023 電子状態観察と分光学的解析による炭化珪素/酸化膜界面欠陥の起源解明
  • 2019 - 2020 炭化珪素MOSFETにおけるキャリア輸送機構の解明
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Papers (42)：
  • Kazuki Tomigahara, Masahiro Hara, Mikito Nozaki, Takuma Kobayashi, Heiji Watanabe. Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces. Applied Physics Express. 2024. 17. 8. 081002-1-081002-4
  • Sosuke Iwamoto, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi. Oxygen-related defects in 4H-SiC from first principles. Applied Physics Express. 2024. 17. 5. 051008-1-051008-5
  • Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi. Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures. Applied Physics Express. 2024. 17. 5. 051004-1-051004-5
  • Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 2024. 175. 108251-1-108251-7
  • Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe. Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 2023. 17. 1. 011003-1-011003-5
ｍore...
MISC (9)：
  • Maximilian Schober, Nicolas Jungwirth, Takuma Kobayashi, Johannes A.F. Lehmeyer, Michael Krieger, Heiko B. Weber, Michel Bockstedte. The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center. Defect and Diffusion Forum. 2023. 426. 43-48
  • Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. 2022 IEEE International Reliability Physics Symposium (IRPS). 2022. P66-1-P66-4
  • Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Investigation of reliability of NO nitrided SiC(1100) MOS devices. 2022 IEEE International Reliability Physics Symposium (IRPS). 2022. 3B.2-1-3B.2-5
  • Tsunenobu Kimoto, Mitsuaki Kaneko, Keita Tachiki, Koji Ito, Ryoya Ishikawa, Xilun Chi, Dionysios Stefanakis, Takuma Kobayashi, Hajime Tanaka. Physics and Innovative Technologies in SiC Power Devices. 2021 IEEE International Electron Devices Meeting (IEDM). 2022. 36-1-1-36-1-4
  • Tsunenobu Kimoto, Hiroki Niwa, Naoki Kaji, Takuma Kobayashi, Ying Zhao, Seigo Mori, Masatoshi Aketa. Progress and future challenges of SiC power devices and process technology. 2017 IEEE International Electron Devices Meeting (IEDM). 2018. 9.5.1-9.5.4
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Patents (5)：
  • 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法
  • 半導体装置
  • 半導体装置およびその製造方法
  • SiC半導体素子の製造方法及びSiC半導体素子
  • 半導体装置およびその製造方法
Books (1)：
  • 次世代パワー半導体の開発・評価と実用化
    エヌ・ティー・エス 2022 ISBN:9784860437671
Lectures and oral presentations  (156)：
  • 広温度範囲に亘るSiO2/SiC界面発光中心の形成過程の調査
    (第85回応用物理学会秋季学術講演会 2024)
  • 負電圧ゲートストレス印加によるSiC MOSFETのチャネル移動度劣化
    (第85回応用物理学会秋季学術講演会 2024)
  • 高温酸化プロセスによるSiC MOSFETのゲートストレス耐性向上
    (第85回応用物理学会秋季学術講演会 2024)
  • 正孔捕獲を抑制した高Mg濃度p型GaN MOS構造の熱安定性
    (第85回応用物理学会秋季学術講演会 2024)
  • ナノチャネルスパッタエピタキシーによる歪み緩和GeSn薄膜成長
    (第85回応用物理学会秋季学術講演会 2024)
ｍore...
Education (3)：
  • 2015 - 2018 Kyoto University Graduate School of Engineering Ph.D. Student, Department of Electronic Science and Engineering
  • 2013 - 2015 Kyoto University Graduate School of Engineering Master's Student, Department of Electronic Science and Engineering
  • 2009 - 2013 Osaka University School of Engineering Science Undergraduate, Department of Electronics and Materials Physics
Professional career (1)：
  • Doctor of Engineering (Kyoto University)
Work history (9)：
  • 2024/04 - 現在 Osaka University Graduate School of Engineering Associate Professor
  • 2023/04 - 現在 Osaka University CFi, Graduate School of Engineering Expert Leaders of Next Generation
  • 2022/10 - 現在 JST PRESTO [Information Carriers] Researcher
  • 2021/01 - 2024/03 Osaka University Graduate School of Engineering Assistant Professor
  • 2019/10 - 2020/12 FAU Erlangen-Nürnberg Department Physik JSPS Overseas Research Fellow
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Committee career (2)：
  • 2024/07 - 現在 ICSCRM2026 実行準備委員会委員
  • 2024/04 - 現在 Advanced Power Semiconductors, The Japan Society of Applied Physics Treasurer [Permanent Member]
Awards (7)：
  • 2023/12 - The 12th NF Foundation R&D Encouragement Award "Excellence Award"
  • 2023/05 - The 22nd Funai Information Technology Award for Young Researchers
  • 2022/03 - The 43rd JSAP Young Scientist Award
  • 2015/11 - Research Encouragement Award, 2nd Meeting on Advanced Power Semiconductor, The Japan Society of Applied Physics
  • 2015/01 - 発表奨励賞, 第294回 電気材料技術懇談会 若手研究発表会
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Association Membership(s) (4)：
SAKIGAKEクラブ(大阪大学) ,  Advanced Power Semiconductors Division, The Japan Society of Applied Physics ,  The Japan Society of Applied Physics ,  IEEE
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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