Rchr
J-GLOBAL ID：202201003227543418
Update date: Jul. 04, 2024
Tanaka Atsushi
タナカ アツシ | Tanaka Atsushi
Affiliation and department：
Job title：
Designated associate professor
Research field (1)：
Electronic devices and equipment
Research keywords (1)：
パワーデバイス、デバイス設計、デバイスプロセス、結晶欠陥、転位、レーザ加工、GaN、SiC、半導体デバイス物理
Research theme for competitive and other funds (4)：
- 2022 - 2024 High speed growth of pn junction by HVPE for fabrication of SJ diod
- 2020 - 2023 Direct observation of electric field distribution in GaN power devices
- 2018 - 2020 5Gの普及・展開のための基盤技術に関する研究開発
- 2017 - 2020 Study about the influence of dislocation on devices for practical application of GaN power devices
Papers (79)：
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Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, et al. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 2024. 135. 18
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Kawasaki S, Kumabe T, Ando Y, Deki M, Watanabe H, Tanaka A, Honda Y, Arai M, Amano H. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz. IEEE Electron Device Letters. 2023. 44. 8. 1328-1331
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Kwon W, Kawasaki S, Watanabe H, Tanaka A, Honda Y, Ikeda H, Iso K, Amano H. Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes. IEEE Electron Device Letters. 2023. 44. 7. 1172-1175
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Park J.H, Pristovsek M, Cai W, Cheong H, Tanaka A, Furusawa Y, Han D.P, Seong T.Y, Amano H. Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs. Advanced Optical Materials. 2023. 11. 10
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Daisuke Inahara, Shunsuke Matsuda, Wataru Matsumura, Ryo Okuno, Koki Hanasaku, Taketo Kowaki, Minagi Miyamoto, Yongzhao Yao, Yukari Ishikawa, Atsushi Tanaka, et al. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field Effect Transistors. physica status solidi (a). 2023
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MISC (1)：
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Qiang Ma, Shiyo Urano, Yuji Ando, Atsushi Tanaka, Akio Wakejima. Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors. Applied Physics Express. 2021. 14. 9
Patents (27)：
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窒化物半導体装置の製造方法及び窒化物半導体基板
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基板製造方法
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レーザ加工方法、半導体部材製造方法、および半導体対象物
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基板製造方法
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レーザ加工方法、半導体部材製造方法、および半導体対象物
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Books (2)：
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シリコンと化合粒半導体の超精密・微細加工プロセス技術
シーエムシー出版 2023
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次世代パワーエレクトロニクスの課題と評価技術
S&T出版 2022
Education (3)：
- 2005 - 2008 Tokyo Institute of Technology
- 2003 - 2005 Tokyo Institute of Technology
- 1999 - 2003 Tokyo Institute of Technology
Work history (6)：
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