Maeda Takuya

マエダタクヤ | Maeda Takuya

Affiliation and department：
Job title： Lecturer/Assistant Professor
Homepage URL (1)： https://scholar.google.co.jp/citations?user=5O-kAOMAAAAJ&hl=ja&oi=ao

Research field (2)： Electric/electronic material engineering , Thin-film surfaces and interfaces

Research keywords (10)： Wide Bandgap Semiconductor , Gallium Nitride (GaN) , Aluminum Nitride (AlN) , Power Device , High Frequency (RF) Device , 高電界物性 , Avalanche Breakdown , ドリフト速度 , Schottky Junction , p-n Junction

Research theme for competitive and other funds (15)：

2023 - 2027 Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials
2023 - 2027 In situ three-dimensional measurement of wide bandgap semiconductors with stimulated Raman scattering
2023 - 2025 Measurement of Electron Drift Velocity in GaN under High Electric Field
2022 - 2025 Demonstration of Novel Transistor Based on Ferroelectric/Nitride Semiconductor Heterostructure
2023 - 2024 公益財団法人村田学術振興財団第39回(2023年度)研究助成

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Papers (23)：

Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Tomoya Okuda, Kohei Ueno, Hiroshi Fujioka. Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering. Applied Physics Express. 2023. 17. 1. 011002-011002
A. Kobayashi, S. Kihira, T. Akiyama, T. Kawamura, T. Maeda, K.i Ueno, H. Fujioka. Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN. ACS Applied Electronic Materials. 2023
J. Casamento, K. Nomoto, T-S Nguyen, H. Lee, C. Savant, L. Li, A. Hickman, T. Maeda, J. Encomendero, V. Gund, et al. FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors. IEDM 2022 Technical Digest. 2022. 11.1.1-11.1.4
Takuya Maeda, Ryan Page, Kazuki Nomoto, Masato Toita, Huili Grace Xing, Debdeep Jena. AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al_0.9Ga_0.1N current spreading layer. Applied Physics Express. 2022. 15. 6. 061007-061007
Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto, Len van Deurzen, Wesley Turner, Patrick Fay, Sai Mu, Chris G. Van de Walle, et al. Epitaxial Sc_xAl_1-_xN on GaN exhibits attractive high-K dielectric properties. Applied Physics Letters. 2022. 120. 15. 152901-152901

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Lectures and oral presentations (41)：

Study on 2DEG Density in ScAlN/GaN and AlGaN/GaN Heterostructures Based on Simulation and Analytical Modeling
(14th International Conference on Nitride Semiconductors (ICNS 14) 2023)
Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental and Machine Learning Approaches
(14th International Conference on Nitride Semiconductors (ICNS 14) 2023)
Sputtering Epitaxial Integration of AlN and NbN for Polarity Control and CrystalPhase Manipulation
(14th International Conference on Nitride Semiconductors (ICNS 14) 2023)
[Late News] First Demonstration of Ferroelectricity and High-K Dielectric Constant in Ultrawide Bandgap AlBN MBE Films
(14th International Conference on Nitride Semiconductors (ICNS 14) 2023)
Characterization of Optical Properties and Bandgaps of ScxAl1-xN Epitaxially Grown on GaN Bulk Substrate by Sputtering Method
(14th International Conference on Nitride Semiconductors (ICNS 14) 2023)

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Education (4)：

2018 - 2020 Kyoto University
2016 - 2018 京都大学大学院工学研究科電子工学専攻 (修士課程)
2012 - 2016 京都大学工学部電気電子工学科
2009 - 2012 大阪府立大手前高等学校理数科

Professional career (3)：

PhD in Engineering (Kyoto University)
Master of Engineering (Kyoto University)
Bachelor of Engineering (Kyoto University)

Work history (6)：

2023/10 - 現在 The University of Tokyo Lecturer/Assistant Professor
2022/04 - 2023/09 The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems Assistant Professor
2020/07 - 2022/03 Cornell University Department of Electrical & Computer Engineering (ECE) Kavli Institute at Cornell for nanoscale science, postdoctoral research fellow
2020/07 - 2022/03 Cornell University Department of Electrical & Computer Engineering (ECE) Japan Society for the Promotion of Science (JSPS) Overseas Research Fellow
2020/04 - 2020/07 Kyoto University Graduate School of Engineering Department of Electronic Science and Engineering Japan Society for the Promotion of Science (JSPS) Research Fellow PD

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Committee career (6)：

2023/10 - 2025/09 The 82nd Device Research Conference Committee of Young Professional Forum
2023/10 - 2025/03 European Materials Research Society (E-MRS 2024) Organizing Committee
2023/06 - 2025/03 The 69th International Electron Device Meetings (IEDM) Program Committee, Power, Microwave/Mm-Wave and Analog Devices/Systems (PMA) area
2023/04 - 2025/03 The 42nd Electronic Materials Symposium Venue Arrangement Committee
2023/04 - 2024/03 Program Committee

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Awards (14)：

2023/06 - 第15回ナノ構造エピタキシャル成長講演会研究奨励賞
2023/02 - The 39th Inoue Research Award for Young Researcher
2020/03 - 令和元年京都大学総長賞
2020/02 - The 18th IEEE EDS Japan Joint Chapter Student Award (IEDM 2019)
2019/09 - 第41回応用物理学会論文奨励賞

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Association Membership(s) (2)：

IEEE , 応用物理学会

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