Rchr
J-GLOBAL ID：202201010001463507
Update date: Jun. 28, 2024
Piedra Lorenzana Jose Alberto
Piedra Lorenzana Jose Alberto
Research field (1)：
Electric/electronic material engineering
Research keywords (5)：
Photonics devices
, Crystal growth
, Si
, Ge
, GaP
Research theme for competitive and other funds (1)：
- 2023 - 2025 Novel group-IV nitride films by reactive sputtering as potential nonlinear optical materials in Si photonics
Papers (11)：
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Joshua Chombo, Mohd Faiz Bin Amin, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Mingjun Jiang, Donghwan Ahn, Kazumi Wada, Yasuhiko Ishikawa. Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications. Japanese Journal of Applied Physics. 2024. 63. 3
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Takumi Maeda, Kota Kato, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Tetsuya Nakai, Yasuhiko Ishikawa. Trench-filling heteroepitaxy of [100]-oriented germanium arrays on (001) silicon substrate. Japanese Journal of Applied Physics. 2024. 63. 3
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Mohd Faiz Bin Amin, Jose A. Piedra-Lorenzana, Keisuke Yamane, Takeshi Hizawa, Tetsuya Nakai, Yasuhiko Ishikawa. High-quality Ge epitaxial film based on dislocation trapping mechanism in patterned Si substrate. Japanese Journal of Applied Physics. 2023
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Kota Kato, Kazuki Motomura, Jose A. Piedra-Lorenzana, Mohd Faiz Bin Amin, Takeshi Hizawa, Tetsuya Nakai, Yasuhiko Ishikawa. Trench-Filling Epitaxy of Germanium on (001) Silicon Enhanced Using [100]-Oriented Patterns. Journal of Electronic Materials. 2023
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Mohd Faiz Bin Amin, Takeshi Hizawa, Jose A. Piedra-Lorenzana, Tetsuya Nakai, Yasuhiko Ishikawa. Reduced Threading Dislocation Density in a Ge Epitaxial Film on a Submicron-Patterned Si Substrate Grown by Chemical Vapor Deposition. Journal of Electronic Materials. 2023
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MISC (13)：
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CHOMBO Joshua, AMIN Mohd Faiz Bin, HIZAWA Takeshi, PIEDRA-LORENZANA Jose A., JIANG Mingjun, AHN Donghwan, WADA Kazumi, ISHIKAWA Yasuhiko. Tensile lattice strain in embedded wire structures of Ge grown on Si substrate. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
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AMIN Mohd Faiz Bin, PIEDRA-LORENZANA Jose A., YAMENE Keisuke, HIZAWA Takeshi, NAKAI Tetsuya, ISHIKAWA Yasuhiko. Ge epitaxial layer grown on V-groove patterned Si substrate. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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PIEDRA-LORENZANA Jose A., KANEKO Shohei, FUKUSHIMA Takaaki, YAMANE Keisuke, FUJIKATA Junichi, ISHIKAWA Yasuhiko. AlN Stressor Layer for Ge-on-Si Photonic Devices. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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PIEDRA-LORENZANA Jose A., KANEKO Shohei, FUKUSHIMA Takaaki, YAMANE Keisuke, FUJIKATA Junichi, ISHIKAWA Yasuhiko. AlN film by reactive sputtering as a stressor for Ge photonic devices on Si. 電子情報通信学会技術研究報告(Web). 2023. 123. 41(ED2023 1-9)
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古家聖輝, 葛谷樹矢, PIEDRA-LORENZANA Jose A., 飛沢健, 山根啓輔, 石川靖彦. Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si. 電子情報通信学会技術研究報告(Web). 2023. 123. 41(ED2023 1-9)
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Lectures and oral presentations (46)：
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Franz-Keldysh Effect in Lateral pin Photodetectors of Ge Strip on Si at C-, L-, and U-band Wavelengths
(2024 IEEE Silicon Photonics Conference 2024)
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Effect of Si cap layer on the lattice strain in a Ge wire structures grown on Si substrate
(2024)
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引張ひずみを増強したGe層を用いたSi上フリースペース近赤外受光器の特性評価
(第21回赤外放射応用関連学会年会 2024)
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CVD Growth of SiGe Layer on Bulk Si for Optical Waveguide Application
(Photonic Device Workshop 2023 (PDW2023) 2023)
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Formation of TEOS-SiOx film by PECVD for Si Photonics Applications
(Photonic Device Workshop 2023 (PDW2023) 2023)
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Association Membership(s) (1)：
THE JAPAN SOCIETY OF APPLIED PHYSICS
