SHUANG YI

シュアンイ | SHUANG YI

Affiliation and department：
Job title： Assistant professor

Research field (1)： Inorganic materials

Research keywords (5)： Nitride thin film , Chalcogenide thin film , Selector material , Phase change memory , Non-volatile memory

Research theme for competitive and other funds (4)：

2024 - 2027 酸素誘起Cr空孔制御によるpnホモ接合CrNフレキシブル熱電デバイスの創成
2022 - 2024 窒化物の高速相変化現象とそのメモリデバイスへの展開
2019 - 2022 窒素ドープCr-Ge-Teの界面伝導制御と新規接触抵抗相変化メモリの創成
2021 - 2022 High-resistive 2D-layered transition metal chalcogenide for ultra-low energy consumption PCRAM

Papers (27)：

Yi Shuang, Yuta Saito, Shogo Hatayama, Paul Fons, Ando Daisuke, Yuji Sutou. Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe5. Journal of Materials Science and Technology. 2025. 210. 246-253
Misako Morota, Shogo Hatayama, Yi Shuang, Shunsuke Mori, Yuji Sutou, Paul Fons, Yuta Saito. Interfacial reaction behavior between ferromagnetic CoFeB and the topological insulator Sb2Te3. Surfaces and Interfaces. 2024. 51
Yi SHUANG, Shin-young KANG Yuji SUTOU. Research Trends in Phase-change Materials and Their Application to Neuromorphic Devices. The Journal of Institute of Electronics, Information and Communication Engineering. 2024. 107. 4. 334-339
Yi Shuang, Daisuke Ando, Yunheub Song, Yuji Sutou. Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material. Applied Physics Letters. 2024
Shogo Hatayama, Shunsuke Mori, Yuta Saito, Paul J. Fons, Yi Shuang, Yuji Sutou. Nonvolatile Isomorphic Valence Transition in SmTe Films. ACS Nano. 2024. 18. 4. 2972-2981

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MISC (9)：

須藤祐司, 畑山祥吾, 森竣祐, SHUANG Yi. Development of phase change materials enabling low-power and fast operation PCRAM. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
須藤祐司, 畑山祥吾, 森竣祐, YI Shunag. Enhancement of phase-change memory performance: Approach from the development of new phase-change materials. 半導体・集積回路技術シンポジウム(CD-ROM). 2021. 85th
畑山祥吾, 畑山祥吾, 小林啓介, 小林啓介, 齊藤雄太, FONS Paul, FONS Paul, YI Shuang, 森竣祐, KOLOBOV Alexander V., et al. Understanding the mechanism of lowering resistivity in transition metal included amorphous chalcogenide. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
齊藤雄太, 畑山祥吾, 畑山祥吾, YI Shuang, FONS Paul, FONS Paul, KOLOBOV Alexander V., KOLOBOV Alexander V., 須藤祐司. Crystallization of a layered chalcogenide with dimensional change of chemical bonding. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
金美賢, 森竣祐, 双逸, 畑山祥吾, 安藤大輔, 須藤祐司. ウルツ鉱型MnTe薄膜における電気伝導機構. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd

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Patents (2)：

Lectures and oral presentations (25)：

A Novel 2D van der Waals Phase-Change Material Based on Transition-metal Binary Chalcogenide NbTe4
(TMS(The Minerals, Metals & Materials Society) 153rd Annual Meeting 2024)
NbTe4: A Promising 2D van der Waals Transition-metal Binary Chalcogenides for phase change memory
(PCOS相変化研究会シンポジウム 2023)
Phase-change chromium nitride for data storage
(E/PCOS2023 2023)
酸素ドーパントによるCrN薄膜のP-N変換
(日本金属学会2023年春期(第172回)講演大会 2023)
P-N conversion of CrN films by oxygen incorporation and their thermoelectric properties
(2022 MRS Fall Meeting & Exhibit 2022)

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Education (2)：

2018 - 2021 Tohoku University Graduate School of Engineering Department of Materials Science, PhD
2016 - 2018 Tohoku University Graduate School of Engineering Department of Materials Science, Master Course

Professional career (1)：

Work history (2)：

2021/10 - 現在 Tohoku University Advanced Institute for Materials Research Assistant Professor
2019/04 - 2021/09 Japan Society for the Promotion of Science JSPS DC1

Awards (4)：

Association Membership(s) (2)：

日本金属学会 , 応用物理学会

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