Rchr
J-GLOBAL ID:200901001486034038   Update date: Jun. 08, 2020

Hayama Kiyoteru

ハヤマ キヨテル | Hayama Kiyoteru
Affiliation and department:
Homepage URL  (1): http://cpu4edu.net/
Research field  (18): Inorganic materials ,  Control and systems engineering ,  Control and systems engineering ,  Electronic devices and equipment ,  Electric/electronic material engineering ,  Applied physics - general ,  Educational technology ,  Intelligent robotics ,  Perceptual information processing ,  Inorganic materials ,  Control and systems engineering ,  Control and systems engineering ,  Electronic devices and equipment ,  Electric/electronic material engineering ,  Applied physics - general ,  Educational technology ,  Intelligent robotics ,  Perceptual information processing
Research keywords  (5): Si Al2O3 ,  SOI ,  radiation damage ,  radiation ,  semiconductor
Research theme for competitive and other funds  (2):
  • Radiation hardening of semiconductor devices
  • fabrication of SOI structure
Papers (4):
  • T. Nakashima, T. Idemoto, I. Tsunoda, K. Takakura, M. Yoneoka, H. Ohyama, K. Yoshino, M. B. Gonzalez, E. Simoen, C. Claeys. Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentration. Thin Solid Films. 2012. 520. 3337-3340
  • Isao Tsunoda, Toshiyuki Nakashima, Nobuyuki Naka, Tatsuya Idemoto, Masashi Yoneoka, Kenichiro Takakura, Kenji Yoshino, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Hidenori Ohyama. Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11. 2012. 9. 10-11. 2058-2061
  • Toshiyuki Nakashima, Tatsuya Idemoto, Isao Tsunoda, Kenichiro Takakura, Masashi Yoneoka, Hidenori Ohyama, Kenji Yoshino, Eddy Simoen, Cor Claeys. Gate-Length Dependent Radiation Damage in 2-MeV Electron-irradiated Si1-xGex S/D p-MOSFETs. DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV. 2012. 725. 235-+
  • H. Ohyama, K. Takakura, M. Hanada, T. Nagano, K. Yoshino, T. Nakashima, S. Kuboyama, E. Simoen, C. Claeys. Degradation of GaN LEDs by electron irradiation. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 2010. 173. 1-3. 57-60
MISC (139):
more...
Books (57):
  • Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs with back accumulation mode operation
    CD Proc. of International Conference on Electrical Engineering 2005 (ICEE2005), July 10-14, 2005, Kunming, China 2005
  • Degradation of the Electrical Performance and Floating Body Effects in Thin Gate Oxide PD-SOI MOSFETs by 2-MeV Electron Irradiation
    Extended abstracts of the 24rd electronic materials symposium 2005
  • Radiation tolerance in HfSiON gate MOSFETs by high-energy particles irradiation
    Extended abstracts of the 24rd electronic materials symposium 2005
  • Degradation of the Electrical Performance and Floating Body Effects in Ultra Thin Gate Oxide FD-SOI n-MOSFETs by 2-MeV Electron Irradiation
    Proc. of Radiation Effects on Components and Systems, RADECS 2004 workshop, September 22-24, Madrid, Spain 2004
  • Degradation of Electrical Performance in FD-SOI n-MOSFETs by 7.5-MeV Protons and 2-MeV Electrons
    Proceeding of 2004 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Nov. 18-20, Unzen, Japan 2004
more...
Education (3):
  • - 1991 Toyohashi University of Technology Graduate School, Division of Engineering
  • - 1989 Toyohashi University of Technology Faculty of Engineering
  • - 1989 Toyohashi University of Technology Faculty of Engineering
Professional career (2):
  • Master of Engineering (Toyohashi University of Technology)
  • Doctor of Engineering (Toyohashi University of Technology)
Association Membership(s) (3):
Information and Communication Engineers ,  The Institute of Electronics ,  The Japan Society of Applied Physics
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