Rchr
J-GLOBAL ID：200901001489790712
Update date: Jun. 08, 2026
Shutaro Asanuma
アサヌマ シュウタロウ | Shutaro Asanuma
Affiliation and department：
Research field (1)：
Thin-film surfaces and interfaces
Research keywords (3)：
electronics
, thin film
, oxide
Research theme for competitive and other funds (4)：
- 2020 - 2023 Exploration of novel physical properties of HfO2-based ferroelectrics by controlling polarization fluctuations
- 2018 - 2023 Concerted research in physics of anomalous phenomena around metal-insulator transition and development of neuromorphic devices
- 2020 - 2022 HfO2強誘電体を用いた機能性トランジスタの開発
- 2013 - 2017 Field effect control of electronic phase of strongly correlated electron oxide by using solid gate insulator
Papers (38)：
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Leonid Bolotov, Yohei Kotsugi, Tomohiro Tsugawa, Shutaro Asanuma, Noriyuki Uchida. Temperature and reactant-driven growth pathways of ruthenium nanofilms on H-terminated Si(100): Insights from nanoscale characterization and machine learning. Journal of Vacuum Science & Technology A. 2026
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Yukinori Morita, Shutaro Asanuma, Hiroyuki Ota, Shinji Migita. Coexisting positive and negative imprint domains and their recovery in undoped HfO2 metal-ferroelectric-metal capacitors. Japanese Journal of Applied Physics. 2026
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Shutaro Asanunma, Hiroyuki Ota, Yukinori Morita, Shogo Hatayama, Shinji Migita. Fabrication of vacancy-independent and intrinsically stable ferroelectric HfO2 through valence-complementary codoping. 2026
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Ryusuke Seino, Hidehiro Asai, Ichiro Takakuwa, Shutaro Asanuma, Yoshihiro Nemoto, Yuki Nishimiya, Keishi Nishio, Makoto Minohara. Design of oxide-based tunnel FETs using amorphous IGZO and p-type oxide semiconductors. Journal of Applied Physics. 2025
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Ichiro Takakuwa, Ryusuke Seino, Seiya Suzuki, Keishi Nishio, Shutaro Asanuma, Yoshihiro Nemoto, Yuki Nishimiya, Yoichi Higashi, Toshimitsu Ito, Makoto Minohara. The impact of growth method on the structural and electronic properties of Nb:Bi2WO6 thin films for high-power pn junction applications. Materials Advances. 2025
ｍore...
MISC (5)：
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浅沼周太郎, 島久, 山田浩之, 井上公, 赤穗博司, 秋永広幸, 澤彰仁. HfO2ゲート酸化膜を用いた強相関酸化物(Nd,Sm)NiO3の電子相制御. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2013. 60th. ROMBUNNO.28A-F2-4
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Azumi K., Asanuma S., Uesu Y., Katsufuji T. 22pWF-12 Microspectroscopic measurements of transition metal oxide with resistance change induced by electric field. Meeting abstracts of the Physical Society of Japan. 2007. 62. 2. 602-602
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Hamaguchi M., Aoyama K., Asanuma S., Uesu Y., Katsufuji T. 20aYH-8 Electric-pulse-induced resistance change in the thin films of various transition metal oxides. Meeting abstracts of the Physical Society of Japan. 2005. 60. 2. 424-424
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Otsuka M, Inaba J, Katsufuji T, Asanuma S., Uesu Y. 13aRB-13 Magnetoresistance in the thin film of perovskite Sr_<1-x-y>La_<x+y>Ti_<1-y>Cr_yO_3. Meeting abstracts of the Physical Society of Japan. 2004. 59. 2. 451-451
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Asanuma S, Kato N, Uesu Y, Menoret C, Kiat J-M, Yamashita Y. E-dependence of lattice strains of relaxor piezoelectric Pb(Zn1/3,Nb2/3)03-9%PbTi03 observed by X-ray diffraction method. Meeting abstracts of the Physical Society of Japan. 2002. 57. 2. 810-810
Patents (4)：
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結晶化積層構造体の製造方法
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不揮発性記憶素子及びその製造方法
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ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子
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ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子
Lectures and oral presentations (32)：
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NaClO溶液の酸化作用を利用した 酸化物薄膜の酸素欠陥低減に関する研究
(応用物理学会 2023)
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NaClO溶液の酸化作用を利用した菱面体晶LaCuO3薄膜の作製
(応用物理学会 2021)
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Thermally stable ALD dielectric stack for IDM MOS device
(International Conference on Solid State Devices and Materials 2021)
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ALD法で形成したHfO2/TiO2/SiO2構造中の界面ダイポール変調
(応用物理学会 2019)
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Interface dipole modulation in ALD HfO2/SiO2 multi-stack MOS structures
(International Conference on Solid State Devices and Materials 2019)
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Professional career (1)：
Awards (1)：
- 2012/03 - 応用物理学会 応用物理学会講演奨励賞 (Nd,Sm)NiO3電気二重層トランジスタの動作特性
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