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J-GLOBAL ID：200901004624379849   Update date: Jan. 31, 2024

Ohachi Tadashi

オオハチ タダシ | Ohachi Tadashi
Affiliation and department：
Doshisha University Faculty of Science and Engineering

About Doshisha University Faculty of Science and Engineering


Job title： Professor of Emeritus
Research field  (2)： Electric/electronic material engineering ,  Crystal engineering
Research theme for competitive and other funds  (14)：
  • 2008 - 2010 Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control method
  • 2001 - 2006 立方晶3族窒化物半導体の分子線エピタキシー成長
  • 2001 - 2006 Growth of group 3 nitrid semichonductors by MBE
  • 1996 - 1996 空隙型スピネル構造のイオン移動経路における高速イオンのイオンダイナミクス
  • 1995 - 1995 銀銅空孔欠陥型硫化物スピネル化合物のマイクロ波領域でのイオンダイナミクス
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Papers (23)：
  • Tadashi Ohachi, Tadashi Ohachi, Yuka Yamamoto, Osamu Ariyada, Yuuki Sato, Sinzo Yoshikado, Motoi Wada. Activity modulation MEE growth of 2H-AlN on Si(111) using double buffer layer grown by PA-MBE. Physica Status Solidi (C) Current Topics in Solid State Physics. 2013. 10. 429-432
  • Qingbo Liu, Dehui Sun, Tao Yan, Feifei Zheng, Yunhua Sang, Hong Liu, Jiyang Wang, Tadashi Ohachi. Spray drying mass-production route for Mg-doped LiNbO3 (Mg:LN) polycrystalline powder based on a wet-chemical method. CrystEngComm. 2012. 14. 17. 5572-5578
  • Haiming Qin, Hong Liu, Yuanhua Sang, Yaohui Lv, Xiaolin Zhang, Yuanyuan Zhang, Tadashi Ohachi, Jiyang Wang. Ammonium sulfate regulation of morphology of Nd:Y 2O 3 precursor via urea precipitation method and its effect on the sintering properties of Nd:Y 2O 3 nanopowders. CrystEngComm. 2012. 14. 5. 1783-1789
  • Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi. Epitaxial growth of β-Si3N4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si3N4/Si(111). Physica Status Solidi (C) Current Topics in Solid State Physics. 2011. 8. 5. 1552-1555
  • T. Ohachi, N. Yamabe, Y. Yamamoto, M. Wada, O. Ariyada. In situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si. Physica Status Solidi. 2011. 8. 5. 1491-1494
ｍore...
MISC (189)：
  • Application of excited nitrogen molecules in RF-MBE growth of group 3 nitrides. The Science and engineering review of Doshisha University. 2008. 48. 4. 113-118
  • Ohachi Tadashi, Wada Motoi. RF-MBE using MEE operated by Mode Change of Nitrogen Discharge. The science and engineering review of Doshisha University. 2007. 47. 4. 59-64
  • SHIMOMURA K., ORIDE K., YAMABE N., INUI K., TAKEDA Y., SHIBATAKI K., ARIYADA O., WADA M., OHACHI T. Low and high bright discharge modes of a nitrogen radical source used for RF-MBE. Journal of the Japanese Association of Crystal Growth. 2006. 33. 4. 197-197
  • OHACHI T. Growth of cubic GaN on Si substrate by using by MBE. Journal of the Japanese Association of Crystal Growth. 2005. 32. 3. 199-200
  • KIKUCHI T., SOMINTAC A. S., ARIYADA O., WADA M., OHACHI T. RF-MBE grown GaN with monitoring and controlling of in-situ activated atomic nitrogen flux. Journal of the Japanese Association of Crystal Growth. 2005. 32. 3. 140-140
ｍore...
Patents (2)：
  • 分子線エピタキシャル装置および分子線エピタキシャル装置を用いた?族グループ窒化物の立方晶単結晶薄膜の製造方法
  • 分子線エピタキシャ装置および分子線エピタキシャル装置を用いた?族グループ窒化物の立方晶単結晶薄膜の製造方法
Books (21)：
  • Cubic and hexgonal GaN growth on 3CSiC template using RF MBE (共著)
    2005
  • Atomic nitrogen production for GaN growth using RF-MBE (共著)
    2005
  • Cubic and hexgonal GaN growth on 3CSiC template using RF MBE (jointly worked)
    Hybrid Nanostructured Materials and their Applications Eds T. Ohachi, A. S. Somintac and M. Wada 2005
  • Atomic nitrogen production for GaN growth using RF-MBE (jointly worked)
    Hybrid Nanostructured Materials and their Applications Eds T. Ohachi, A. S. Somintac and M. Wada 2005
  • Silver atomic traps in &alpha;-Ag<SUB>2</SUB>Se measured by Coulometric titration method
    2004
ｍore...
Education (2)：
  • - 1966 Doshisha University
  • - 1964 Doshisha University
Professional career (2)：
  • Doctor of Engineering (Doshisha University)
  • Master of Engineering (Doshisha University)
Work history (13)：
  • 1994 - (昭和39)年3月 同志社大学工学部電気工学科卒業
  • 1991 - (平成3)年4月 同志社大学大学院博士後期課程教授
  • 1988 - (昭和63)年4月 同志社大学大学院博士前期課程教授
  • 1984 - (昭和59)年4月 同志社大学工学部教授現在にいたる。
  • 1975 - (昭和50)年6月 工学博士(同志社大学)
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Committee career (3)：
  • 2002 - 2004 日本結晶成長学会 会長
  • 1995 - 2001 日本結晶成長学会 渉外理事
  • 1989 - 固体イオニクス学会 幹事
Association Membership(s) (7)：
電気学会 ,  電子情報通信学会 ,  日本結晶成長学会 ,  日本物理学会 ,  日本マイクログラビティー応用学会 ,  応用物理学会 ,  固体イオニクス学会
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