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J-GLOBAL ID：200901008013325927   Update date: Nov. 24, 2025

Takafumi Kamimura

カミムラ タカフミ | Takafumi Kamimura
Affiliation and department：
National Institute of Information and Communications Technology

About National Institute of Information and Communications Technology


Homepage URL  (1)： https://www2.nict.go.jp/green/
Research field  (1)： Electronic devices and equipment
Research keywords  (9)： Wireless communication ,  Harsh environment device ,  Power device ,  RF FET ,  Gallium Oxide ,  電界効果型トランジスタ ,  ナノテクノロジー ,  量子効果 ,  カーボンナノチューブ
Research theme for competitive and other funds  (3)：
  • 2008 - 2010 カイラリティの揃った単層カーボンナノチューブ単電荷結合デバイスの開発
  • 2005 - 2006 トンネルスピン注入によるカーボンナノチューブ・スピントロニクスデバイス
  • 単層カーボンナノチューブを用いた単電荷メモリーの開発
Papers (43)：
  • Zhenwei Wang, Sandeep Kumar, Takafumi Kamimura, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki. Ga2O3 fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga2O3 (010) substrates. Japanese Journal of Applied Physics. 2024
  • Takumi Ohtsuki, Takafumi Kamimura, Masataka Higashiwaki. Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga2O3 RF MOSFETs Using (Al x Ga1-x )2O3 Back-Barrier. IEEE Electron Device Letters. 2023
  • Takafumi Kamimura, Hiroyuki Nishinaka, Takeshi Onuma, Toshinori Taishi. Gallium Oxide and Related Materials FOREWORD. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SF
  • Takafumi Kamimura, Yoshiaki Nakata, Masataka Higashiwaki. Effect of (AlGa)2O3 back barrier on device characteristics of β-Ga2O3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel. Japanese Journal of Applied Physics. 2021. 60. 3. 030906-030906
  • Takafumi Kamimura, Yoshiaki Nakata, Masataka Higashiwaki. Delay-time analysis in radio-frequency β -Ga2O3 field effect transistors. Applied Physics Letters. 2020
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Patents (17)：
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Books (4)：
  • パワーデバイスの最新開発動向と高温対策および利用技術
    (株)R&D支援センター 2024 ISBN:9784905507741
  • 次世代パワーデバイスに向けた高耐熱・高放熱材料の開発と熱対策
    技術情報協会 2024 ISBN:9784867980309
  • Frontiers of graphene and carbon nanotubes : devices and applications
    Springer Japan 2015 ISBN:9784431553717
  • Physical and Chemical Properties of Carbon Nanotubes
    IntechOpen Limited 2013 ISBN:9789535110026
Lectures and oral presentations  (100)：
  • 2025 International Conference on Solid State Devices and Materials (SSDM 2025)
  • 減圧ホットウォールMOVPE成長 $\omega t=Ga_{2}O_{3}$ 薄膜のフォトキャパシタンス測定
    (第86回応用物理学会秋季学術講演会)
  • $\beta-Ga_{2}O_{3}$ 薄膜のMBE成長と横型高周波トランジスタの開発
    (2025)
  • $\beta-Ga_{2}O_{3}$ における塩素系ドライエッチングによるキャリアプロファイル異常とエッチング量の相関
    (第72回応用物理学会春季学術講演会)
  • $\beta-Ga_{2}O_{3}$ における塩素系ドライエッチングによるキャリアプロファイル異常とその可動性
    (第85回応用物理学会秋季学術講演会)
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Education (3)：
  • 2004 - 2006 The University of Osaka Graduate School of Engineering Science
  • 2002 - 2004 University of Tsukuba Graduate School of Pure and Applied Sciences
  • 1997 - 2002 Shizuoka University Faculty of Engineering Department of Electrical and Electronic Engineering
Work history (11)：
  • 2023/04 - 現在 National Institute of Information and Communications Technology
  • 2021/04 - 2023/03 National Institute of Information and Communications Technology
  • 2014/04 - 2021/03 National Institute of Information and Communications Technology
  • 2013/04 - 2014/03 National Institute of Information and Communications Technology
  • 2012/04 - 2013/03 The University of Osaka The Institute of Scientific and Industrial Research
Show all
Committee career (3)：
  • 2024/03 - 現在 酸化物基金 酸化物基金委員
  • 2020/10 - 2023/03 IWG0-4実行委員会 IWG0-4実行委員会委員(出版)
  • 2020/10 - 2022/06 IWG0-4実行委員会 IWG0-4実行委員会委員(現地)
Awards (5)：
  • 2008 - International Conference on Solid State Devices and Materials (SSDM) International Conference on Solid State Devices and Materials (SSDM) Young Researcher Award Single charge sensitivity of single-walled carbon nanotube single-hole transistor
  • 2006 - IEEE EDS Japan Chapter 2006 IEEE EDS Japan Chapter Student Award Electrical Observation of One Dimensional Sub-band Structure of Carbon Nanotube in Schottky Barrier Transistor
  • 2005 - IEEE EDS Japan Chapter 2005 IEEE EDS Japan Chapter Student Award Coherent Transport of Hole in p-type Semiconductive Carbon Nanotube
  • 2004 - NANO KOREA 2004, 2004 International Nanotech Symposium & Exhibition in Korea Best poster award
  • 2004 - IEEE EDS Japan Chapter 2004 IEEE EDS Japan Chapter Student Award Fabrication and I-V Characterization of Carbon Nanotube Single Electron Transistor Operated at Room Temperature
Association Membership(s) (1)：
The Japan Society of Applied Physics (JSAP)
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