Rchr
J-GLOBAL ID：200901008364965671   Update date: Mar. 15, 2024

YAMAUCHI Satoshi

ヤマウチ サトシ | YAMAUCHI Satoshi
Affiliation and department：
Ibaraki University Graduate School of Science and Engineering (Engineering) Department of Materials Science and Engineering

About Ibaraki University Graduate School of Science and Engineering (Engineering) Department of Materials Science and Engineering


Job title： Professor
Research field  (4)： Electronic devices and equipment ,  Semiconductors, optical and atomic physics ,  Functional solid-state chemistry ,  Electric/electronic material engineering
Research keywords  (2)： 銅薄膜の気相選択形成 ,  Plasma Processing, Hetero-epitaxial growth, Zinc-Oxide film, Titanium-Oxide film, Light-emitting devices, Photo-Catalist, Super-hydrophilicity
Research theme for competitive and other funds  (7)：
  • 2023 - 2025 選択金属成膜法を用いた自己整合配線形成技術
  • 2022 - 2025 Selective Chemical-Vapor Deposition of Metal Films using Cu-Iodide
  • 2020 - 2023 自己解離型化学気相法による金属層の選択形成
  • 2017 - 2020 Selective Cu-deposition using CuI as precursor
  • 2012 - 2015 Development of THz-emitter using Sugar Crystal
Show all
Papers (64)：
  • Gento Toyoda, Hikari Kikuchi, Satoshi Yamauchi, Tatsuya Joutsuka, Takashi Fuse, Yusuke Kubota. Study of Cu-growth feature by selective low-pressure chemical vapor deposition using a CuI precursor. Japanese Journal of Applied Physics. 2023. SH1002. 1-5
  • Tomohiro Shirai, Satoshi Yamauchi, Hikari Kikuchi, Hiroki Fukumoto, Hiroto Tsukada, Tomohiro Agou. Synthesis, characterization, and formation of self-assembled monolayers of a phosphonic acid bearing a vinylene-bridged fluoroalkyl chain. Applied Surface Science. 2022. 577. 151959-1-151959-7
  • T. Joutsuka, H. Yoshinari, S. Yamauchi. Facet Dependence of Photocatalytic Activity in Anatase TiO2: Combined Experimental and DFT Study. Bulletin of the Chemical Society of Japan. 2021. 94. 1. 106-111
  • Taiji Nishikawa, Kensuke Horiuchi, Tatsuya Joutsuka, Satoshi Yamauchi. Low-pressure chemical vapor deposition of Cu on Ru using CuI as precursor. Journal of Crystal Growth. 2020. 549. 125849-1-6
  • Tatsuya Joutsuka, Satoshi Yamauchi. Low-pressure chemical vapor deposition of Cu on Ru substrate using CuI: Ab initio calculations. Chemical Physics Letters. 2020. 741. 137108-1-5
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MISC (20)：
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Patents (8)：
  • 成膜方法及び成膜装置
  • 銅の成膜装置、銅の成膜方法、銅配線形成方法、銅配線
  • テラヘルツ波を用いた異物検査装置及びその方法
  • テラヘルツ電磁波を用いた試料の構造分析方法およびテラヘルツ電磁波を用いた試料の構造分析装置
  • 半導体素子の製造方法
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Books (2)：
  • プラズマCVDにおける成膜条件の最適化に向けた反応機構の理解とプロセス制御・成膜事例
    サイエンス&テクノロジー 2018 ISBN:9784864281706
  • ディスプレイ・光学部材における薄膜製造技術
    情報機構 2007 ISBN:9784901677837
Lectures and oral presentations  (41)：
  • Selective chemical vapor deposition of Cu using CuI on fine-structure
    (Advanced Metallization Conference 2023 32nd Asian Session 2023)
  • Selective chemical vapor deposition of Cu using CuI-precursor for fine structured Metallization
    (E-MRS Fall-Meeting 2023 2023)
  • 二段階成長による選択LPCVD-Cuの成長形態の制御
    (第30回電気学会茨城支所研究発表会 2022)
  • 金属ハライドを原料とする金属層の気相選択形成
    (ハロゲン利用ミニシンポジウム 2022)
  • A study of Cu-growth feature by selective-LPCVD using CuI-precursor
    (Advanced Metallization Conference 2022 31st Asian Session 2022)
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Education (1)：
  • - 1991 Tohoku University Graduate School, Division of Engineering Electronic Engineering
Professional career (1)：
  • Dr. Engineering (Tohoku University)
Work history (2)：
  • 1997/04 - Ibaraki Univeristy
  • 1991/04 - 1997/03 Oki Electric Industry Co., Ltd.
Awards (1)：
  • 1989 - Materials Research Society Graduate Student Awards
Association Membership(s) (5)：
材料技術研究協会 ,  The Institute of Electrical and Electronics Engineers,(IEEE) ,  The Japan Society of Applied Physics ,  The Institute of Electrical and Electronics Engineers (IEEE) ,  Materials Research Society (MRS)
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